486 SMPS Search Results

B66363-G-X197

Abstract: B66363 B66363-G-X127 B66363-G-X187 39 0 39 core transformers
Contextual Info: ETD 39/20/13 Core B66363 20 _ 0,4 CECC 25 301-002 material N27 • For SMPS transformers with optimum weight/performance ratio at small volume 14,2+0,8 g ■ In accordance with IEC 61185 ■ Quality assurance per UTE 83313-002/ ■ ETD cores are supplied as single units

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2VS-16A HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­ sonal computer etc. MAXIMUM RATINGS Tc = 25'C Ratings Unit V dss Drain-source voltage

k428

Abstract: MC 140 transistor "MC 140" transistor K-428 transistor mc 140 diode K428
Contextual Info: 7 ^ 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

ETD-39

Abstract: B66364B1016T001 B66363-G 200 smps transformers epcos B66363 B66363-G-X127 B66363-G-X187 B66363-G-X197 valox 420se0 ETD 39
Contextual Info: ETD 39/20/13 Core B66363 20 _ 0,4 CECC 25 301-002 material N27 • For SMPS transformers with optimum weight/performance ratio at small volume 14,2+0,8 g ■ In accordance with IEC 61185 ■ Quality assurance per UTE 83313-002/ ■ ETD cores are supplied as single units

Contextual Info: 7 Philips Components Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

JESD97

Abstract: STGW35NC60W Gw35nc60
Contextual Info: STGW35NC60W 40 A, 600 V ultra fast IGBT Features • High frequency operation ■ Lower CRES / CIES ratio no cross-conduction susceptibility Applications ■ High frequency motor controls, inverters, UPS ■ HF, SMPS and PFC in both hard switch and resonant topologies

AP4320AK6TR-G1

Contextual Info: Data Sheet ADVANCED CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER General Description Features The AP4320 is a highly integrated solution for a constant voltage/constant current mode SMPS application. • · · · · · · The AP4320 contains one 2.5V voltage reference and

Contextual Info: / S T SGS-THOMSON c o r a m i * ! BUV298AV NPN TRANSISTOR POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

APD260

Contextual Info: Preliminary Datasheet Primary Side Power Switcher for Off-line SMPS General Description Features The AP3967 consists of a primary side regulation controller and a high voltage transistor, and is specially designed for off-line power supplies within 3.5W output power. Typical applications include

APD260

Contextual Info: Preliminary Datasheet Primary Side Power Switcher for Off-line SMPS General Description Features The AP3968D consists of a primary side regulation controller and a high voltage transistor, and is specially designed for off-line power supplies within 4W output power. Typical applications include

buk553

Abstract: buk553-60b
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

transistor T43

Abstract: BUK553-60A BUK553-60B
Contextual Info: N AMER PHILIPS/DISCRETE b^E » b b iB 'm □G3G7E1D 3TB • APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

ETD-39

Abstract: ETD 49 62323 smps book B65848 EELP 22 EF COIL FORMER epcos B65888 EPCOS B66317 B65659
Contextual Info: Ferrites and accessories Selector guide Date: September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited. Selector guide

SGS100D

Contextual Info: 3GE » m QD30bfl4 4 ^ _ ^ 3 3 - 3 > f Z 7 S G S -T H O M S O N ^ 7# SG S100DA020D " S G S-THOMSON NPN DARLINGTON POWER MODULE • POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rth JUNCTION TO CASE ■ FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

121bd

Abstract: SC 1139 DG 391ED400 152FP500 ALC10
Contextual Info: Snap-In Aluminum Electrolytic Capacitors ALC10 Series, 85ºC Overview Applications KEMET's ALC10 Series of snap-in capacitors covers a wide range of case sizes and voltage ratings. The ALC10 Series features high ripple current, surge voltage capability and very

SC 1139 DG

Abstract: 121bd 391DF400 bc 407 lead info 561EH450 223ED040 101CC500 562CD063
Contextual Info: Snap-In Aluminum Electrolytic Capacitors ALC10 Series, 85ºC Overview Applications KEMET's ALC10 Series of snap-in capacitors covers a wide range of case sizes and voltage ratings. The ALC10 Series features high ripple current, surge voltage capability and very

Contextual Info: Snap-In Aluminum Electrolytic Capacitors ALC10 Series, +85ºC Overview Applications KEMET's ALC10 Series of snap-in capacitors covers a wide range of case sizes and voltage ratings. The ALC10 Series features high ripple current, surge voltage capability and very

121bd

Contextual Info: Snap-In Aluminum Electrolytic Capacitors ALC10 Series, 85ºC Overview Applications KEMET's ALC10 Series of snap-in capacitors covers a wide range of case sizes and voltage ratings. The ALC10 Series features high ripple current, surge voltage capability and very

BUK553-60A

Abstract: BUK553-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D Bl 7110fiSb D0b4aEb T5b • P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ G E N E R A L D E S C R IP T IO N N-cnannel enhancement mode logic level field-effect power transistor in a plastic envelope.

100-P

Abstract: BUK553-60A BUK553-60B T0220AB
Contextual Info: P H IL I PS I N T E R N A T I O N A L bSE D HI 7 1 1 0 6 2 b Dab 4 EE b Philips Semiconductors T5b • PHIN Product Specification PowerMOS transistor BUK553-60A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode

IGBT STGW30NC60W

Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A High frequency operation 2 3 3 Lower CRES / CIES ratio (no cross-conduction

GP30NC60W

Abstract: GW30NC60W JESD97 STGP30NC60W STGW30NC60W
Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction