48BGA Search Results

MR0A16A

Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
Contextual Info: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

tsop 48 PIN type2

Abstract: 48BGA MR0A16AMA35
Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

0.35mm pitch BGA

Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

qfn 3x3 tray dimension

Abstract: XCDAISY BFG95 XC5VLX330T-1FF1738I pcb footprint FS48, and FSG48 WS609 jedec so8 Wire bond gap XC3S400AN-4FG400I FFG676 XC4VLX25 cmos 668 fcbga
Contextual Info: Device Package User Guide [Guide Subtitle] [optional] UG112 v3.5 November 6, 2009 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

23265

Contextual Info: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advance Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview Features The N02L1618C1A is an integrated memory

PSEUDO SRAM

Abstract: CS26LV32163
Contextual Info: Low Power Pseudo SRAM 2 M Word x 16 bit CS26LV32163 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Mar. 01, 2005 2.1 Revise 1. page 2 & 4: page address inputs Nov. 23, 2005 Remark 2. Add Vcc absolute max. in page 5 2.2

N04L1618C2A

Abstract: N04L1618C2AB N04L163WC1A
Contextual Info: AMI Semiconductor, Inc. N04L1618C2A ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview Features The N04L1618C2A is an integrated memory

DQU12

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures

Contextual Info: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

TEC Driver

Contextual Info: DRV590 SLOS365A – AUGUST 2001 – REVISED AUGUST 2002 1.2-A HIGH-EFFICIENCY PWM POWER DRIVER FEATURES D 1.22-A DC 82% Duty Cycle Output Current D D D D D D DESCRIPTION The DRV590 is a high-efficiency power amplifier ideal for driving a wide variety of thermoelectric cooler

125OC

Abstract: BGA-48-0608 BS616LV2019 BS616LV2019TC 48-pin TSOP
Contextual Info: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2019 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 3.6V Ÿ Very low power consumption : VCC = 3.0V Operation current : 16mA Max. at 70ns 2mA (Max.) at 1MHz

MX23L6423A

Abstract: MX23L6423ATC-90G
Contextual Info: MX23L6423A 64M-BIT PAGE MODE MASK ROM FEATURES • Bit organization - 8M x 8 byte mode - 4M x 16 (word mode) • Fast access time - Random access:90ns (max.) - Page access:25ns (max.) • Page size - 8 words per page • Current - Operating:20mA - Standby:15uA

Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

Z04B

Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Contextual Info: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply

tray matrix bga

Abstract: N02L6181AB27I
Contextual Info: N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Features Overview • Single Wide Power Supply Range 1.65 to 2.2 Volts The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device

MR0D08B

Contextual Info: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

BGA OUTLINE DRAWING

Abstract: mr4a16bmys351
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

2227V

Contextual Info: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

Z04B

Abstract: MARK Z04D
Contextual Info: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as

CY7C1061

Abstract: CY7C1061AV33-12ZI
Contextual Info: CY7C1061AV33 1M x 16 Static RAM Features WE input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through

Contextual Info: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 3.6V Ÿ Very low power consumption : VCC = 3.0V Operation current : 25mA Max. at 55ns

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: Low Power Pseudo SRAM 2 M Word x 16 bit CS26LV32163 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Mar. 01, 2005 2.1 Revise 1. page 2 & 4: page address inputs Nov. 23, 2005 Remark 2. Add Vcc absolute max. in page 5 2.2