48S1603 Search Results

Contextual Info: Preliminary CMOS SDRAM 48S16030 4M X 8Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 48S16030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply • LVTTL com patible with m ultiplexed address rate Dynam ic RAM organized as 4 x 4,194,304 w ords by 8 bits,

Contextual Info: Preliminary KMM374S3323T_ PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package Dimensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM374S3323T KMM374S3323T SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: PC66 SODIMM KMM466S1723AT2 KMM466S1723AT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION T he Sam sung KM M 466S1723AT2 is a 16M bit x 64 S ynchro­ • Perform ance range nous Dynam ic RAM high density m em ory m odule. The S am ­

Contextual Info: Preliminary KMM366S1723T_PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package D im ensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM366S1723T KMM366S1723T SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

48S160

Abstract: 48S1603
Contextual Info: Preliminary 48S16030 CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address The 48S16030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,

Contextual Info: 48S16030B CMOS SDRAM 128Mbit SDRAM 4M X 8Bit X 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 ELECTRONICS 48S16030B CMOS SDRAM R evision H istory

Contextual Info: SDRAM MODULE KMM377S1723CT3 KMM377S1723CT3 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S1723CT3 is a 16M bit x 72 S ynchro­

Contextual Info: SDRAM MODULE Preliminary KMM377S3323T Revision History Revision 1 M ay 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 2 (July 1998) - "REGE" description is added. Revision 3 (Aug. 1998) - Three ALVC 162835 & one CDC2509A are used. Revision 4 (Sep. 1998)

Contextual Info: Preliminary KMM374S1723T_ PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package Dimensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM374S1723T KMM374S1723T SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: Preliminary KMM366S3323T_PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package D im ensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM366S3323T KMM366S3323T SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

48S160

Abstract: 48S16030 48S1603
Contextual Info: SDRAM MODULE KMM377S1723CT3 KMM377S1723CT3 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S1723CT3 is a 16M bit x 72 S ynchro­