IRFI460D Search Results

Contextual Info: IRFI460D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D)13 @Temp (øC)100# IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55

H270

Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452
Contextual Info: Data Sheet No. PD-9.818 I N T E R N A T I O N A L R E C T I F I E R I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N -C H A N N E L 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

IRF146

Abstract: IRF1460 Thermal Resistance vs. Mounting Pad Area
Contextual Info: Data Sheet No. PD-9.818 INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI46Q N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number Rectifier’s advanced line of power M O SFET transistors.

fjs 500 machined

Abstract: IRFI460 IRFI460D IRFI460U pj 67 diode I-266
Contextual Info: Data Sheet No. PD-9.818 INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.