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    4N60D Search Results

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    4N60D Price and Stock

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    Rochester Electronics LLC HGTG24N60D1

    IGBT 600V 40A TO-247
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    DigiKey HGTG24N60D1 Bulk 24,999 36
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    Rochester Electronics LLC HGTG24N60D1D

    IGBT 600V 40A TO-247
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    DigiKey HGTG24N60D1D Bulk 9,092 31
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    STMicroelectronics STL24N60DM2

    MOSFET N-CH 600V 15A PWRFLAT HV
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    DigiKey () STL24N60DM2 Cut Tape 2,877 1
    • 1 $3.20
    • 10 $2.54
    • 100 $1.86
    • 1000 $1.46
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    STL24N60DM2 Digi-Reel 2,877 1
    • 1 $3.20
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    Mouser Electronics STL24N60DM2 7,722
    • 1 $3.14
    • 10 $2.49
    • 100 $1.82
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    STMicroelectronics STL24N60DM2 7,722 1
    • 1 $3.08
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    TME STL24N60DM2 1
    • 1 $3.16
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    Avnet Silica STL24N60DM2 3,000 17 Weeks 3,000
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    Chip Stock STL24N60DM2 6,800
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    EBV Elektronik STL24N60DM2 17 Weeks 3,000
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    Vyrian STL24N60DM2 4,495
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    STMicroelectronics STB24N60DM2

    MOSFET N-CH 600V 18A D2PAK
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    DigiKey () STB24N60DM2 Cut Tape 1,000 1
    • 1 $4.06
    • 10 $2.66
    • 100 $1.99
    • 1000 $1.61
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    STB24N60DM2 Reel 1,000 1,000
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    STB24N60DM2 Digi-Reel 1,000 1
    • 1 $4.06
    • 10 $2.66
    • 100 $1.99
    • 1000 $1.61
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    Mouser Electronics STB24N60DM2 1,486
    • 1 $4.14
    • 10 $2.71
    • 100 $2.03
    • 1000 $1.45
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    STMicroelectronics STB24N60DM2 1,486 1
    • 1 $3.80
    • 10 $2.50
    • 100 $1.87
    • 1000 $1.58
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    TME STB24N60DM2 993 1
    • 1 $3.85
    • 10 $2.56
    • 100 $1.97
    • 1000 $1.85
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    Avnet Silica STB24N60DM2 17 Weeks 1,000
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    Chip One Stop STB24N60DM2 Cut Tape 580 0 Weeks, 1 Days 1
    • 1 $4.05
    • 10 $2.65
    • 100 $1.90
    • 1000 $1.43
    • 10000 $1.25
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    Chip Stock STB24N60DM2 37,500
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    EBV Elektronik STB24N60DM2 17 Weeks 1,000
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    Win Source Electronics STB24N60DM2 34,000
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    • 100 $1.23
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    STMicroelectronics STF24N60DM2

    MOSFET N-CH 600V 18A TO220
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    DigiKey STF24N60DM2 Tube 776 1
    • 1 $3.33
    • 10 $3.33
    • 100 $1.65
    • 1000 $1.37
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    Mouser Electronics STF24N60DM2 65
    • 1 $3.26
    • 10 $2.12
    • 100 $1.62
    • 1000 $1.16
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    STMicroelectronics STF24N60DM2 65 1
    • 1 $3.10
    • 10 $1.75
    • 100 $1.48
    • 1000 $1.34
    • 10000 $1.34
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    TME STF24N60DM2 1
    • 1 $2.77
    • 10 $2.13
    • 100 $1.94
    • 1000 $1.94
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    Avnet Silica STF24N60DM2 1,950 17 Weeks 50
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    EBV Elektronik STF24N60DM2 17 Weeks 50
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    IBS Electronics STF24N60DM2 22,000 50
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    • 100 $1.32
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    4N60D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4N60D

    Contextual Info: SC CT04 4N60D D Trriac 60 00V, 4A STANDA ARD TRIAC 2, 4 4 Th his device iss suitable fo or low power AC switch hing application, 1: T1 ph hase controll application n such as fa an speed an nd temperatture 2, 4: T2 mo odulation co ontrol, lighting control and


    Original
    4N60D O-252 KSD-S6O001-000 4N60D PDF

    4N60D

    Abstract: GE SC triac 4N60
    Contextual Info: SC CT04 4N60D D Trriac 60 00V, 4A STANDA ARD TRIAC 2, 4 4 Th his device iss suitable fo or low power AC switch hing application, 1: T1 ph hase controll application n such as fa an speed an nd temperatture 2, 4: T2 mo odulation co ontrol, lighting control and


    Original
    4N60D O-252 KSD-S6O001-000 GE SC triac 4N60 PDF

    4n60f

    Abstract: 4N60P
    Contextual Info: 4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    O-251) O-252) O-251 O-252 O-252 13-Apr-2011 4n60f 4N60P PDF

    Contextual Info: 4N60D / HY4N60M 600V / 4.0A 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS


    Original
    HY4N60D HY4N60M 2002/95/EC O-251 O-252 O-252 ITO-251 MIL-STD-750 HY4N60D 4N60D PDF

    Contextual Info: 4N60D / HY4N60M 600V / 4.0A 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS


    Original
    HY4N60D HY4N60M 2002/95/EC O-251 O-252 O-252 ITO-251 MIL-STD-750 HY4N60D 4N60D PDF