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    4N60 Search Results

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    4N60 Price and Stock

    Vishay Siliconix SIHD14N60ET4-GE3

    N-CHANNEL 600V
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    DigiKey SIHD14N60ET4-GE3 Cut Tape 2,960 1
    • 1 $3.02
    • 10 $1.962
    • 100 $3.02
    • 1000 $1.0145
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    Vishay Siliconix SIHA14N60E-GE3

    N-CHANNEL 600V
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    DigiKey SIHA14N60E-GE3 Tube 2,920 1
    • 1 $2.17
    • 10 $2.17
    • 100 $2.17
    • 1000 $0.9575
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    STMicroelectronics STL24N60DM2

    MOSFET N-CH 600V 15A PWRFLAT HV
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    DigiKey STL24N60DM2 Cut Tape 2,877 1
    • 1 $4.13
    • 10 $2.717
    • 100 $4.13
    • 1000 $1.46017
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    STL24N60DM2 Digi-Reel 2,877 1
    • 1 $4.13
    • 10 $2.717
    • 100 $4.13
    • 1000 $1.46017
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    Mouser Electronics STL24N60DM2 8,808
    • 1 $3.02
    • 10 $2.39
    • 100 $1.74
    • 1000 $1.42
    • 10000 $1.41
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    STMicroelectronics STL24N60DM2 8,808 1
    • 1 $2.96
    • 10 $2.34
    • 100 $1.71
    • 1000 $1.43
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    TME STL24N60DM2 1
    • 1 $2.85
    • 10 $2.57
    • 100 $2.26
    • 1000 $1.83
    • 10000 $1.62
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    Avnet Silica STL24N60DM2 17 Weeks 3,000
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    EBV Elektronik STL24N60DM2 17 Weeks 3,000
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    Infineon Technologies AG IKD04N60RFATMA1

    IGBT TRENCH 600V 8A TO252-3
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    DigiKey IKD04N60RFATMA1 Digi-Reel 2,318 1
    • 1 $1.63
    • 10 $1.031
    • 100 $1.63
    • 1000 $0.49475
    • 10000 $0.49475
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    IKD04N60RFATMA1 Cut Tape 2,318 1
    • 1 $1.63
    • 10 $1.031
    • 100 $1.63
    • 1000 $0.49475
    • 10000 $0.49475
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    Newark IKD04N60RFATMA1 Cut Tape 2,432 1
    • 1 $1.09
    • 10 $0.828
    • 100 $0.682
    • 1000 $0.48
    • 10000 $0.48
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    Rochester Electronics IKD04N60RFATMA1 382 1
    • 1 $0.4388
    • 10 $0.4388
    • 100 $0.4125
    • 1000 $0.373
    • 10000 $0.373
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    TME IKD04N60RFATMA1 1
    • 1 $1.29
    • 10 $1.11
    • 100 $0.81
    • 1000 $0.75
    • 10000 $0.75
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    EBV Elektronik IKD04N60RFATMA1 20 Weeks 2,500
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    onsemi FCP104N60F

    MOSFET N-CH 600V 37A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCP104N60F Tube 1,569 1
    • 1 $5.7
    • 10 $5.7
    • 100 $5.7
    • 1000 $2.81188
    • 10000 $2.81188
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    Mouser Electronics FCP104N60F 945
    • 1 $4.66
    • 10 $4.59
    • 100 $2.86
    • 1000 $2.81
    • 10000 $2.79
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    TME FCP104N60F 1
    • 1 $5.51
    • 10 $5.51
    • 100 $3.32
    • 1000 $2.84
    • 10000 $2.84
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    Richardson RFPD FCP104N60F 800
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    • 1000 $2.81
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    Avnet Silica FCP104N60F 300 18 Weeks 50
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    EBV Elektronik FCP104N60F 19 Weeks 50
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    New Advantage Corporation FCP104N60F 250 1
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    • 100 $4.72
    • 1000 $4.37
    • 10000 $4.37
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    Find more 4N60 price and stock on Findchips.com

    4N60 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4N60 Unisonic Technologies 4 Amps, 600 Volts N-CHANNEL POWER MOSFET Original PDF
    4N600 Unknown N-Channel Field Effect Transistor Original PDF
    4N600(3600) Bay Linear N-Channel Field Effect Transistor Original PDF
    4N600S Bay Linear 600V 4.0A N-channel field effect transistor Original PDF
    4N600T Bay Linear 600V 4.0A N-channel field effect transistor Original PDF
    4N60L-TA3-T Unisonic Technologies 4 Amps, 600 Volts N-CHANNEL POWER MOSFET Original PDF
    4N60-TA3-T Unisonic Technologies 4 Amps, 600 Volts N-CHANNEL POWER MOSFET Original PDF
    4N60-TF3-T Unisonic Technologies 4 Amps, 600 Volts N-CHANNEL POWER MOSFET Original PDF

    4N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF QW-R502-061

    4N60B

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F QW-R502-061 4N60B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 4N60-R 4N60-R O-220F1 QW-R502-A64

    utc 4n60l

    Abstract: 4n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-Q Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 4N60-Q 4N60-Q QW-R502-972 utc 4n60l 4n60l

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 4N60-S 4N60-S QW-R502-973

    4n60f

    Abstract: SIF4N60 45V100 4n60fp SIF4N60FP 600VGS F4N60 4N60 D25A
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification HANNEL POWER MOSFET NN-沟道功率 MOS 管//N-C N-CHANNEL ●特点：热阻低 开关速度快 4N60 FP SI SIF 4N60FP RoHS 输入阻抗高 符合RoHS RoHS规范 ●FEATUR ES ES：•LOW THERMAL RESISTANCE ■HIGH INPUT RESISTANCE ■FAST SWITCHING


    Original     		PDF SIF4N60FP 4N60FP O-220FP O-220FP 4n60f SIF4N60 45V100 4n60fp SIF4N60FP 600VGS F4N60 4N60 D25A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60Z Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 4N60Z 4N60Z O-220F QW-R502-777

    4N60B

    Abstract: UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-262 „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-262 O-220F QW-R502-061 4N60B UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability


    Original     		PDF O-220F O-220 O-220F1 O-220F2 QW-R502-061

    utc 4n60l

    Abstract: 4N60L-TA3-T 4n60l 4n60e mosfet 4n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF O-220 O-220F O-220F1 QW-R502-061 utc 4n60l 4N60L-TA3-T 4n60l 4n60e mosfet 4n60

    4N60B

    Abstract: mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 4N60L 4N60G QW-R502-061 4N60B mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60

    utc 4n60l

    Abstract: 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET „ 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS ON = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability


    Original     		PDF O-220 O-220F O-220F1 O-220F2 QW-R502-061 utc 4n60l 4n60e mosfet 4n60 utc 4n60g 4N60 4n60l 4N60-E UTC4N60 4N60G-TQ3-T A4N60

    TO252 rthjc

    Abstract: 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET
    Text: 4N60 4 Amps， ，600Volts N-Channel MOSFET • Description The 4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF Amps600Volts ET4N60 O-220 O-220F O220F TO252 rthjc 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-S Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 4N60-S 4N60-S QW-R502-973.

    Diode BAY 55

    Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
    Text: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications


    Original     		PDF 4N600 O-220 Diode BAY 55 Bay Linear 4N600S 4N600T 4N6003600 DSA0083437

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60K-MK Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 4N60K-MK 4N60K-MK QW-R205-013

    4N60B

    Abstract: 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-251 O-220F O-220F1 O-252 QW-R502-061 4N60B 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a

    4n60

    Abstract: 4n60l 4N60L-TA3-T 4N60-TF3-T utc 4n60l 4N60-TA3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F QW-R502-061 4n60 4n60l 4N60L-TA3-T 4N60-TF3-T utc 4n60l 4N60-TA3-T

    4N60D

    Abstract: No abstract text available
    Text: SC CT04 4N60D D Trriac 60 00V, 4A STANDA ARD TRIAC 2, 4 4 Th his device iss suitable fo or low power AC switch hing application, 1: T1 ph hase controll application n such as fa an speed an nd temperatture 2, 4: T2 mo odulation co ontrol, lighting control and


    Original     		PDF 4N60D O-252 KSD-S6O001-000 4N60D

    4N60P

    Abstract: IXTA4N60P IXTP4N60P IXTY4N60P
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N60P IXTP 4N60P IXTY 4N60P VDSS ID25 RDS on = 600 = 4 ≤ 1.9 V A Ω N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 4N60P O-220 O-263 4N60P IXTA4N60P IXTP4N60P IXTY4N60P

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 4N60K 4N60K O-220F O-220F1 O-251 QW-R502-806

    4n60f

    Abstract: 4N60P
    Text: 4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-251) O-252) O-251 O-252 O-252 13-Apr-2011 4n60f 4N60P

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-E Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 4N60-E 4N60-E QW-R502-970.

    ssm4n55

    Abstract: tnd 308
    Text: .7 9 6 4 1 4 2 •Tfl DE I TTbmMS HODS3CH 9 8 D .0 5 3 0 9 INC S AMSUNG S E M I C O N D U C T 0 Ih D _ n -c h a U n e I ^ " POWER MOSFETS SSM4N55/4N60 FEATURES • • • .• • • • • • Low RDS<on at high voltage Improved inductive ruggedness


    OCR Scan     		PDF SSM4N55/4N60 SSM4N55 SSM4N60 tnd 308