4A5SM52 Search Results

Contextual Info: PD-2.457 International üü Rectifier HFA70NH60 Ultrafast, Soft Recovery Diode HEXFRED LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V ? ▼ T V F = 1.5V Qrr * = 980nC

Contextual Info: Bulletin 125167/B International S Rectifier s th o s s e rie s PHASE CONTROL THYRISTORS Stud Version Features 110A • C e n te r g a te ■ H e rm e tic m e ta l c a s e with c e ra m ic in s u lato r A lso a v a ila b le w ith g la s s -m e ta l s e a l up to 1 2 0 0 V

rectifier ds3

Contextual Info: International m 4flSS4S2 0015274 344 —inr pd-9.856 lk»riRectifier IRFIBF30G H EX FET P o w e r M O S F E T • • • • • IN T E R N A T IONAL Isolated Package High Voltage lsolation= 2.5KV R M S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating

Contextual Info: International USSR Rectifier po-mois IRFBC40S/L PRELIMINARY HEXFET Power MOSFET • Surface Mount IRFBC40S • Low-profile through-hole (IRFBC40L) • Available in Tape & Reel (IRFBC40S) • Dynamic dv/dt Rating • 150°C Operating Temperature • Fast Switching

Contextual Info: P D -9 .1 2 2 8 International jgg] Rectifier_ H EXFET P ow er M O S FE T • • • • • • • IRFDC20 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements

st smd diode marking code

Abstract: smd marking 2t2 marking code vnq DIODE PN junction diode smd DIODE code marking Q smd marking KH marking h2t
Contextual Info: PD-9.1003 International K Rectifier IRF614S HEXFET® Power M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 250 V