4B55452 Search Results

irkt 132 12

Contextual Info: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

125dc/125dc

Abstract: s1na E1017 R52KF10A 0S81 25B0
Contextual Info: 4855452 II JO R I D S T T ^ 4B55452 000801,2 3 | ~ 0e |62 Data Sheet No. PD-2.188 in t e r n a t io n a l r e c t if ie r O y~.a 3 . ^ 3 q INTERNATIONAL RECTIFIER R52KF SERIES 1200-1000 VOLTS RANGE REVERSE RECOVERY TIME 1.2//S * 1100 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES

5566-4

Abstract: max3824
Contextual Info: P D 9 .1 6 1 5 International I R Rectifier FA38SA50 PRELIMINARY H E X F E T P o w er M O S F E T Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance

Contextual Info: INTERNATIONAL RECTIFIER b5E D • MÖ55452 GD17Elb S27 M I N R PD-2.333 3o c p q o so International [?o r JRectifier 3 o c pq io o SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features 30CPQ. Units lF AV Rectangular waveform 30

hf50c120

Contextual Info: International IO R Rectifier PD'2-496 H F 50C 120A C B TARGET HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form D e s c rip tio n P a ra m e te r G u a ra n te e d (M in /M a x ) T e s t C o n d itio n s

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V

Contextual Info: International muRectifier P D - 9 .1 2 6 0 A IRLML5103 PRELIMINARY H E X F E T P ow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm Available in Tape and Reel

Contextual Info: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

thyristor BT 161

Contextual Info: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability

Contextual Info: Bulletin 12083/B International SR ectifier SD300C.C s e r ie s STANDARD RECOVERY DIODES Hockey Puk Version 650A Features • Wide current range ■ High voltage ratings up to 3200V ■ High surge current capabilities ■ Diffused junction ■ Hockey Puk version

Contextual Info: P D - 9.1106 International H^lRectffier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -1 Ops @125°C, VGE = 15V • Switching-loss rating includes all "tail” losses

Contextual Info: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: International IQR Rectifier PD‘2500 H F30A 060A C B TARGET HF30A060ACB Hexfred Die in Wafer Form 600 V Size 30 4" Wafer Electrical Characteristics Wafer Form Param eter V fm BV r I RM Description Guaranteed (Min/Max) Forward Voltage Test Conditions 1.8V Max.

Contextual Info: PD - 5.025A International [iggRectifier CPV364MU IGBT SIP MODULE Ultra-Fast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz

Contextual Info: Bulletin 125170/A International [^Rectifier s t 333c .c s e r ie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • Metal case with ceramic insulator ■ International standard case T0-200AB E-PUK ■ All diffused design ■ Center amplifying gate

Contextual Info: Bulletin 125167/B International S Rectifier s th o s s e rie s PHASE CONTROL THYRISTORS Stud Version Features 110A • C e n te r g a te ■ H e rm e tic m e ta l c a s e with c e ra m ic in s u lato r A lso a v a ila b le w ith g la s s -m e ta l s e a l up to 1 2 0 0 V

MT29VZZZAD8DQKSM-053 W ES.9D8

Contextual Info: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

Contextual Info: International IO R Rectifier PD'2'501 H F 10A 060A C B TARGET HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) Test Conditions Forward Voltage 1.8V Max. bvr

2N2023-30

Abstract: 2N1800 JAN TRANSISTOR D1651 2N1792 2N1804 2N1805 2N1807 2N1909 2N1792 Series 2N2023
Contextual Info: S S INTERNATIONAL RECTIFIER 4855^5^"INTERNATIONAL DE | 4 A S S 4 5 5 RECTIFIER 55C 0 D G 4 ñ 2 3 CH823 Ü Data Sheet No. PD-3.082 in t e r n a t io n a l r e c t if ie r 2 N 1 7 9 2 , S N S 1 N 8 Q 5 , S S O S 3 H O A m p Major Raxings and Characteristics

IR 50RIA120

Abstract: 50RIA5 HALF WAVE RECTIFIER CIRCUITS high speed FULL WAVE RECTIFIER CIRCUITS with scr A14U T30 rectifier 50RIA120 50RIA60 SCR 50RIA20 50RIA20
Contextual Info: INTERNATIONAL RECTIFIER 4ÖSS4S2 0G13M53 bT7 • INR STE D OCT 0 3 1990 Data Sheet No. PD-3.062B INTERNATIONAL RECTIFIER 50RIA SERIES 8 0 Amp RMS SCRs Description/Features Major Ratings and Characteristics This series of medium power thyristors is intended for

Contextual Info: International IQ R Rectifier PD-9.1442 IRGCH40SE TARGET IRGCH40SE IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE(on) C ollector-to-Em itter Saturation V oltage

Contextual Info: MA5SMS2 O O lS flfiO 0 3 3 « I N R International k »: Rectifier IRLD024 HEXFET Power MOSFET • • • • • • • PD-9.629A INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating For Automatic Insertion End Stackable Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V

5d3 diode

Abstract: A/SMD 5d3 diode
Contextual Info: PD -9.1488 International l R Rectifier IRFI9634G PRELIMINARY HEXFET Power M OSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -250V R DS on = 1 -0Q