4C35 Search Results

4C35A

Abstract: 4C35 Thyratron thyratrons FX2505 BS448 equivalent thyratron tube operation thyratron tube
Contextual Info: E2V Technologies FX2505 Hydrogen Thyratron The data to be read in conjunction with the Hydrogen Thyratron Preamble. ABRIDGED DATA Hydrogen-filled triode thyratron, positive grid, for pulse operation. A hydrogen reservoir is incorporated. Electrically superior to 4C35A.

SCHEMA chauffage par induction

Abstract: circuit diagram induction heating Converter for Induction Heating thyratron tube 4c35 induction heating schema induction heating circuits 4C35 Thyratron 4c35 hydrogen Thyratron induction heating control circuit diagram
Contextual Info: PHILIPS 4C35 HYDROGEN THYRATRON, THYRATRON À HYDROGENE WASSERSTOFFTHYRATRON Application: Switching in line modulator circuits of microwave radar systems. The properties of the tube suggest other applications such as: frequency conversion high efficiency in­

PL522

Abstract: 4C35 PL435 5c22 5c22 tube pl 522 microwave tubes S/PL435
Contextual Info: PHILIPS The following type numbers have been changed : Les numéros de type suivants ont été changés: Die folgenden Typennummern sind geändert : PL 435 = 4C35 PL 522 = 5C22 T27T5TFCT W ôèU PL 435 PL 522 PHILIPS The following type numbers have been change!

4C35

Abstract: thyratron tube 5c22 induction heating circuits thyratron tube 4c35 thyratron 5c22 piezoelectric crystals Thyratron 4c35 hydrogen Thyratron induction heater for heating thyratron tube operation
Contextual Info: w SYLVANIA engineering data service electronic products DESCRIPTION The type 4C35 H ydrogen Thyratron is a hot-cathode grid-controlled gas rectifier tube especially designed for pulsing service at high repetition frequencies, high peak currents, and high voltages.

4C35

Contextual Info: page 1 2 3 4 5 6 7 8 9 10 11 12 13 4C35 sheet 1 1 1 2 2 2 3 3 4 4 5 5 FP date 1954.12.12 1957.05.05 1958.01.01 1954.12.12 1957.05.05 1958.01.01 1954.12.12 1957.05.05 1954.12.12 1957.05.05 1955.04.04 1957.05.05 1999.12.28

Contextual Info: 4C35N Power MOSFET 30 V, 80 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: Non-Reversible OMEGALABEL Temperature Monitors Price “Micro-Dot” Series Part number is °F temperature rating preceded by letters “MD” bag of 10 MD Labels bag of 30 $ 1250 $ 32 Shown actual size ⁄ 16" Outside Diameter ⁄ 64" Indicating Window

NJU6406B

Abstract: NJU6408B NJU6460A NJU6577 96TI NJU6561 NJU6420B NJU6423B NJU6425 NJU6426
Contextual Info: l_ • O K D - f ✓ 1J - . - r 'is L I N E - U P 1 no 45 N J U 6 4 6 0 A m m 1 6 « i 1 ÌTh* » . L C D 3 > h P - 7 h • 7 -fA a W C G n » L C D * E » * E 5 . 0 V M 2 M H z R O M » A * > 7 ‘ f 7 7 ‘ T C P 7 l 6 8 0 t * i h X'JAfi/7 ” i t l = < k y c O G I Z * Ì

Contextual Info: Spade and Ring Series .300 Notched Spade 20-14 AW 0 Uninsulated STYLE AND IN S U L A T IO N D I M E N S IO N S STU D 4 RANGE None U L/CSA ^ IS Q U A N T IT Y RECO M M EN DED STO CK PER REEL S T R IP L E N G T H T H IC K N E S S 5000 .020 % 2 ± 1/ 3 2 .032

TIA-968-A

Abstract: marking BO JESD51-2 GR-1089-CORE TISP4C290H3BJ TISP4C350H3BJ 4C395H TISP4C395H3BJ
Contextual Info: TISP4C290H3BJ THRU TISP4C395H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge - Low Off-State Capacitance

EME-6300

Contextual Info: RELIABILITY REPORT DATE : 11/26/03 QUALITY ENG : PART NUMBER : Dinh Pham MIC2937A PROJECT # : PACKAGE TYPE : ASSEMBLY LOC D/C # LOT # FAB # M/C PROCESS 93009-1 TO-220-3L Chinteik 9403 3D1510-2 Fortune EME6300 BCDM 93009-2 TO-220-3L Chinteik 9444 3C1872-1 Fortune

Contextual Info: 4C35N Power MOSFET 30 V, 80 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

thyratron tube 5c22

Abstract: induction heating circuits 5c22 tube thyratron 5c22 5C22 4C35 Thyratron "induction heating circuits" piezoelectric crystals thyratron tube 4c35
Contextual Info: SVIA A M Y SYLVANIA engineering data service electronic products ü u /Z j l DESCRIPTION: Hydrogen Thyratron The type 5C22 H ydrogen Thyratron is a hot-cathode grid-controlled gas rectifier tube especially designed for pulsing service at high repetition frequencies, high peak currents, and high voltages.

4C35

Abstract: bo 135 4C395H TISP4C145H3BJ TISP4C290H3BJ TISP4C350H3BJ JESD51-2
Contextual Info: CO M PL IA NT TISP4C115H3BJ THRU TISP4C395H3BJ *R oH S LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge

Contextual Info: 123415678429ABCD58 123415678429ABCD58 1234456 789ABCDECF  4C45E57457DC7  234C25DC4E4E ! "F56#9 6#9 6#952$   17E %4C3F 53&A48'  7CD45 4DCCBC5 4B4F565  A7"( 7 C24 1F3 x × CBF8E7E

32c46

Contextual Info: Technical Information PrimeSTACK 6PS0900R12KE4-DG-C27V Vorläufige Daten preliminary data Key data 3x 432A rms at 400V rms, forced air fan not implemented General information Stack for various inverter applications. IGBT's, heat sinks, capacitors, drivers and

4C395H

Abstract: JESD51-3 MD-SMB-004-a GR-1089-CORE TIA-968-A TISP4C145H3BJ TISP4C290H3BJ TISP4C350H3BJ JESD51-2
Contextual Info: oH VE S CO AV R M AI SIO PL LA N IA BL S NT E TISP4C125H3BJ THRU TISP4C395H3BJ *R LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge

4C395H

Abstract: 4C35 MD-SMB-004-a
Contextual Info: *R oH VE S CO AV R M AI SIO PL LA N IA BL S NT E TISP4C145H3BJ THRU TISP4C395H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge

K643

Abstract: 65A3 n373 276C 238e ts-w 307f K573 2732 memory chip motorola 5118 user manual ber 2a37 rX 433 N
Contextual Info: S19204CBI12 MEKONG Datasheet Rev 1.9 September 16, 2002 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED AMCC - Confidential and Proprietary Dear customer, Thank you for choosing an AMCC device. We appreciate your confidence in our products.

k161 GR 3A

Abstract: 5bd1 LCD 5B4A md 5406 4512 PIN DIAGRAM UTOPIA Level 3 atm forum s131 d04 4064 4FB3 soc 512a 4DF6
Contextual Info: S4806CBI Ohio Ohio Datasheet Datasheet Revision 3.1 October 15, 2002 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED AMCC Dear customer, Thank you for choosing an AMCC device. We appreciate your confidence in our products. To ensure your complete satisfaction with our products and technologies, we have prepared this

VALVO Handbuch

Abstract: zx 1051 ignitron valvo handbuch rohren ic stk 432 090 zm 1022 1052 ignitron valvo transistoren ZA1004 valvo za1002
Contextual Info: Gasentladungsröhren W eitere S p e zia lrö h re n mit dem en tsprechend en Z u b e h ö r find en Sie in den fo lg en d e n V A L V O - H a n d b ü c h e r n : S p e z ia l-V e rstä rk e rrö h re n Ele ktro n e n stra h l-W a n d le rrö h re n O sz illo g ra fe n rö h re n

5082-0200

Contextual Info: Part No. 83 84 83 84 83 84 83 84 83 84 83 84 83 84 83 84 63 84 63 84 83 64 83 84 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 98 100 107 107 107 107 107 107 107 107 103 103 103 103 103 104 104 104 104 82 82 82 82 B2 62 82 62

Contextual Info: Technical Information 6PS12017E4FG35151 PrimeSTACK Vorläufige Daten preliminary data Key data 3x 591A rms at 690V rms, forced air fan not implemented General information Stack for various inverter applications. IGBTs, heat sink, capacitors, drivers and

GR-1089-CORE

Abstract: TISP4C145H3BJ TISP4C290H3BJ TISP4C350H3BJ JESD51-2
Contextual Info: *R oH S CO M PL IA NT TISP4C115H3BJ THRU 4C350H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge