4E50 Search Results

4E20-8

Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current

fri07

Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current

8C430

Abstract: 8G435 CD50B
Contextual Info: K0 =3DBCAH0 C0=30A30CM0G0CM00>>C?A8=C K08E,0>A0C8,0 =?DC K0'8=030)DA50240$>D=C0$>34;B K0558284=2H0D?0C>02 K08G430BF8C278=60A4@D4=2H "10,&".0"$ ").-010A+'% .%*)*4;42><A0C2>< 'A>24BB0>=CA>; -8A4;4BB0%4CF>A: $40BDA4<4=C030*4BC '.C0)4A84B

1N3842

Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
Contextual Info: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current

ba5991

Abstract: BA5991FP
Contextual Info: M o n o lith ic IC s •C D -G decoder Part No. & BU 9340K Supply Features voltage V 4 .5 -5 .5 Package Linear RGB high speed DAC. Reset on disk change. No microcontroller required QFP64 Note : £:Under development •V C O for CD-ROM Part No. Supply voltage (V)

Contextual Info: 1234567869ABA12344567869A 1234567839AB2CD3 8C"3A B36?E263E2DI63<C3 E B%G#3>C383E BC3 *#!3>C3A!3 3K3A3)C#B3K3AC%%BC3 !BC3 E1223 F3 3E3 1453 F3

shockley diode application

Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
Contextual Info: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has

4E20-28

Abstract: 4E20-8 4E20-M-3 4E30-M-3 4E50M-28 4E50 1N4007V AUO-002 4E303 4E20
Contextual Info: AMERICAN POIilER 073713S 5«iE D DEVICES 0DDDD7D DM7 • A P D / ^ c V - / J » 1N4001-1N4007 p o w e r d e v i c e s , inc. SEMICONDUCTORS 1A plastic silicon rectifiers MECHANICAL CHARACTERISTICS - .010 : 002 NOM DIA I'61 1.1 FEATURES • Low cost • High current capability

Contextual Info: L0+;?9=703?60&E=D;A=70 EDAEDC L0/;670*3?9700"?AED L0%@G0 B@8;=770"?6ECDBI0+D3?63B60@@DAB;?D L0 =@43=0+387DI097?5I0@>A=;3?57 L0*@!+0@>A=;3?D +;0'5/+70!+-1+276020440.)'7.326 .;67@AE6;@0*@ED7BC 3D35@> )@;?D0@80+3=7 ,7CD03?60&73CEB7>7?D %0+;9?C03?60%;9:D;?9

4E50M-28

Abstract: FR103 1N3772
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current

3S41SL

Abstract: shockley 4E20-28 4E20-3 4E20-8 4E20-M-28 4E20-M-3 4E20-M-8 4E30-3 4E30-8
Contextual Info: -FENldAL ELECTRONICS/APD * S3 DE | 3541SL.3 OODDTEE 3 | T r i FOUR-LAYER DIODES DO-7/DO-35 Case Typo Switching Voltage Vs ± V @ 25*C ' V ' ’ ' . . 4E20-3 4E20-M-3 4E20-8 - 4 E 2 0 -M -8 4 E 2 0 -2 8 20±4 20±4 20±4 20±4 20 ± 4 4E20-M-28

k161 GR 3A

Abstract: 5bd1 LCD 5B4A md 5406 4512 PIN DIAGRAM UTOPIA Level 3 atm forum s131 d04 4064 4FB3 soc 512a 4DF6
Contextual Info: S4806CBI Ohio Ohio Datasheet Datasheet Revision 3.1 October 15, 2002 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED AMCC Dear customer, Thank you for choosing an AMCC device. We appreciate your confidence in our products. To ensure your complete satisfaction with our products and technologies, we have prepared this

led 7 doan

Abstract: sla 6102 LT 8521 lg 7607 DB82 JL - 012C Z8000 8C08 5252 F 0906 LT 210D
Contextual Info: Advanced Micro Computers A subsidiary of Advanced Micro D evices A m 96/4016 Evaluation Board Monitor Listing REVISION RECORD REVISION A DESCRIPTION In itial Is s u e 1 2 /3 /7 9 B S e c o n d P rin tin g ( 1 /7 /8 0 ) Publication No. 0 0 6801 46 Address com m ents concerning

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

1223

Contextual Info: A 7+1 5CF 1223 1223  5C1 5CC .F 0CC DE2 1267819A 5C9 51F 1223 .D .' ,20+4 1 F C D 9 CAC/.  .' FE 0C E .', FE 0C9 0CD 1B A  D 0'/.6 0+'+6 FE &*4 %D 9 F CF 1 F C1 34 5CD 5C FE7 FE7 F FD FC FF F1 F2 1 1 & 0& 0'6 5'6 06

shockley

Abstract: 4E20-8 4E30-8 1N3844 1n3842 4E20-28 4E20-3 4E20-M-28 4E20-M-3 4E20-M-8
Contextual Info: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 - — 14-25 — 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4

32c13

Contextual Info: I0 <2CAB@G0 B/<2/@20CL0F0CL00=B>@7<B I08E+0=@0C8+0 <>CB I0(7F0(72320(673:2 I0447173<1G0C>0B=02 I07F320AE7B167<504@3?C3<1G #30-'#/0#% #*/.020A,(&!/&+*. )3:31=;A/B/1=; &@=13AA0=<B@=: ,7@3:3AA0$3BE=@9

4E20-28

Abstract: 1N3935 FIRING squib AMERICAN POWER DEVICES 4E50M-28 4E20M8 4E20-8 4E20
Contextual Info: 53E D AMERICAN POWER DEVICES • D73713S Q000Q25 4 .■ 5 FOUR-LAYER DIODES “ — - — - - i I DO-7/DO-35 Case Type Switching Voltage Vs ± V @ 25°C v 4t?20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 20±4 20±4 20±4 20 ± 4 20±4 4E20-M-28

shockley diode

Abstract: shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835
Contextual Info: TRIGGERS & SWITCHES Item Number Part Number Manufacturer Switching Voltage Min V Max Pulse ITRM @ Width (s) (A) Is Max VT Max (A) (A) @ IT IH Max (A) (A) Operating Temperature (Oe) Min Max Package Style Diac, (Bidirectional Diode Thyristor) (Cont'd) 060

shockley

Abstract: 4E20-28 395 transistor clevite 4E20-8 4e20m-8 4G200M 4E20A 4J50-25 4E30-8
Contextual Info: TRANSISTOR PA L O 1801 ALTO PAGE PLANT MILL ROAD • PALO ALTO. CALIFORNIA A D iv is io n o f C /e vite C o rp o ra tio n 4-LAYER MIL-LINE 1-99 100-499 4E20M-8 5.00 4.00 4E20M-28 4.80 4E30M-8 500-1999 E DIODES S E R I E S IN 1-99 100-499 500-1999 3.30 IN 3831