CY7C128A 16k sram
Abstract: CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
Text: Qualification Report June, 1994, QTP# 91423/93201 Version 1.1 16K Chop Redesign MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A 4K x 4 Static RAM
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CY7C128A
CY7C167A
CY7C168A
CY7C169A
CY7C170A
CY7C171A
CY7C172A
200mA
CY7C128A 16k sram
CY7C128A SRAM
CY7C128A
CY7C167A
CY7C168A
CY7C169A
CY7C170A
CY7C171A
CY7C172A
EME-6300H
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CY7C128A SRAM
Abstract: 256K x 8 SRAM CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
Text: Qualification Report December, 1994, QTP# 94065 Version 1.0 16K SRAM, 7% SHRINK, R21 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A
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CY7C128A
CY7C167A
CY7C168A
CY7C169A
CY7C170A
CY7C171A
CY7C172A
M32007.
-4000V
CY7C128A SRAM
256K x 8 SRAM CY7C128A SRAM
CY7C128A
CY7C167A
CY7C168A
CY7C169A
CY7C170A
CY7C171A
CY7C172A
EME-6300H
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KDS 4.000 Crystal
Abstract: No abstract text available
Text: SH67P53/K53 OTP/Mask 4-Bit micro-controller with LCD Driver Features SH6610C-Based Single-Chip 4-Bit Micro-controller with LCD Driver OTP ROM: 4K X 16 bits SH67P53 MASK ROM: 4K X 16 bits (SH67K53) RAM: 196 X 4bits - 32 System Control Register
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SH67P53/K53
SH6610C-Based
SH67P53)
SH67K53)
300kHz
30kHz
20MIN
KDS 4.000 Crystal
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Untitled
Abstract: No abstract text available
Text: SH69P48A OTP 4K 4-bit Micro-controller with 10-bit SAR A/D Converter Features SH6610D-based single-chip 4-bit micro-controller with 10-bit SAR A/D converter OTPROM: 4K X 16bits RAM: 253 X 4bits - 61 System control registers - 192 Data memory Operation voltage:
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SH69P48A
10-bit
SH6610D-based
16bits
30kHz
10MHz,
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IDT6178S
Abstract: 6178S12
Text: IDT6178S CMOS StaticRAM 16K 4K x 4-BIT CACHE-TAG RAM MILITARY AND COMMERCIAL TEMPERATURE RANGE IDT6178S CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed Address to MATCH Valid time – Military: 12/15/20/25ns
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IDT6178S
12/15/20/25ns
10/12/15/20/25ns
300mW
22-pin
24-pin
IDT6178S
6178S12
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Untitled
Abstract: No abstract text available
Text: SH69P48A OTP 4K 4-bit Micro-controller with 10-bit SAR A/D Converter Features SH6610D-based single-chip 4-bit micro-controller with 10-bit SAR A/D converter OTPROM: 4K X 16bits RAM: 253 X 4bits - 61 System control registers - 192 Data memory Operation voltage:
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SH69P48A
10-bit
SH6610D-based
16bits
30kHz
10MHz,
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RJ-017
Abstract: rj017
Text: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT7M1014 is a 4K x 36 asynchronous high-speed BiCMOS Dual-Port static RAM module constructed on a co fired ceramic substrate using 4 IDT7014 4K x 9 asynchro
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IDT7M1014
IDT7M1014
IDT7014
MIL-STD883,
7M1014
RJ-017
rj017
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Untitled
Abstract: No abstract text available
Text: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT7M1014 is a 4K x 36 asynchronous high-speed BiCMOS Dual-Port static RAM module constructed on a co fired ceramic substrate using 4 IDT7014 4K x 9 asynchro
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IDT7M1014
IDT7M1014
IDT7014
36-bit
142-lead
MIL-STD883,
7M1014
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Untitled
Abstract: No abstract text available
Text: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT7M1014 is a 4K x 36 asynchronous high speed BiCMOS Dual-Pori static RAM module constructed on a co fired ceramic substrate using 4 IDT7014 4K x 9 asynchro
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IDT7M1014
IDT7M1014
IDT7014
36-bit
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LL014
Abstract: No abstract text available
Text: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The ID T 7 M 1 0 1 4 is a 4K x 36 asynchronous high-speed B iC M O S D ual-Port static RA M m odule constructed on a co fired ceram ic substrate using 4 ID T 7 0 1 4 4K x 9 asynchro
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IDT7M1014
LL014
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Untitled
Abstract: No abstract text available
Text: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M x 4 components 8-Mword x 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M x 16 & 4 pcs of 4M x 4 components)
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HB56EW472ETC-A
HB56EW872ETK-A
32/64MB
72-bit,
ADE-203-844
HB56EW472ETC-A,
64-Mbit
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CAPACITOR 64 680 4J
Abstract: 11DQ12 8dq9 Nippon capacitors
Text: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M X 4 components 8-Mword X 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M X 16 & 4 pcs of 4M x 4 components)
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HB56EW472ETC-A
HB56EW872ETK-A
32/64MB
72-bit,
ADE-203-844
HB56EW
472ETC-A,
872ETK-A
CAPACITOR 64 680 4J
11DQ12
8dq9
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES INC EbE D • SShSTDS GGG1GG2 1 ■ _ _ T - 4 ¿ -2 3 -0 S ' 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Separate I /O , Transparent W rite L7C171 , or H igh Impedance Write (L7C172) □ Auto-Powerdown Design
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L7C171)
L7C172)
24-pin
28-pin
L7C171
L7C172
125cC
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Untitled
Abstract: No abstract text available
Text: 4K x 4 CMOS Cache-Tag Static RAM FEATURES_ DESCRIPTION _ □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output □ High Speed Hash Gear
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L7C180)
L7C181)
L7C180
L7C181
L7C180CM
L7C181CM
L7C180DME
L7C181DME
MIL-STD-883
L7C180CME-
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L7C180
Abstract: SSL4180
Text: 4K x 4 CMOS Cache-Tag Static RAM FEATURES_ □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output □ High Speed Flash Clear □ Auto-Powerdown Design
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L7C180/181
L7C180)
L7C181)
SSL4180,
SSL4181,
MK41H80,
MCM4180
22-pin
L7C180
SSL4180
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IDT71586
Abstract: No abstract text available
Text: CMOS STATIC RAM 6 4 K 4 K x 16-BIT LATCHED CacheRAM IDT 71586 FEATURES: DESCRIPTION: • Wide 4K x 16 Organization The IDT71586 is a fast 4K x 16 latched address CMOS static RAM designed to enhance cache memory designs. This device of fers improved circuit board densities overdesigns using traditional
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16-BIT)
IDT71586
82C307,
IDT79R3000
MIL-STD-883,
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ssl4180
Abstract: No abstract text available
Text: 4K x 4 CMOS Cache-Tag Static RAM FEATURES_ □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output □ High Speed Flash Clear □ Auto-Powerdown Design
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L7C180/181
L7C180)
L7C181)
SSL4180,
SSL4181,
MK41H80,
MCM4180
22-pin
ssl4180
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IMS1420M
Abstract: 1AV Series
Text: IMS1423M CMOS High Performance 4K x 4 Static RAM MIL-STD-883C FEATURES DESCRIPTION • INM O S1Very High Speed CM OS • Advanced Process - 1.6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to + 125° C • 4K x 4 Bit Organization
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IMS1423M
MIL-STD-883C
20-Pin
IMS1420M
IMS1423M
MIL-STD-883C.
IMS14ID
255Q-
IMS1423S-35M
IMS1420M
1AV Series
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Untitled
Abstract: No abstract text available
Text: 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O, Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 190 mW typical at 35 ns Standby: 100 p.W typical
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L7C168/170
L7C170
CY7C168/170
20/22-pin
20-pin
L7C168
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pin function of ic 7493
Abstract: om 8383
Text: IMS1423 High Performance 4K x 4 CMOS Static RAM m o s FEATURES DESCRIPTION • • • • • • • • • • • • The INMOS IMS1423 is a high performance 4K x 4 CMOS static RAM. The IMS1423 provides maximum density and speed enhancements with the additional
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IMS1423
20-Pin,
300-mil
20-Pin
IMS1423
pin function of ic 7493
om 8383
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Untitled
Abstract: No abstract text available
Text: L 7 C 171/172 4K x 4 Static RAM DESCRIPTION FEATURES □ 4K x 4 Static RAM with Separate I/O , Transparent Write L7C171 , or High Impedance Write (L7C172) □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation
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L7C171)
L7C172)
CY7C171/172
24-pin
28-pin
L7C171/172
L7C171
L7C172
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Untitled
Abstract: No abstract text available
Text: MK41 H80 N -20/22/25/35 SGS-THOMSON 4K x 4 CMOS TAG RAM 4K x 4 SRAM WITH ONBOARD 4 BIT COMPA RATOR 20,22,25, AND 35ns ADDRESS TO COMPARE ACCESS TIME EQUAL ACCESS, READ AND WRITE CYCLE TIMES FLASH CLEAR FUNCTION 22-PIN, 300 MIL PLASTIC N D IP -2 2 (Plastic Package)
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22-PIN,
MK41H80
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Untitled
Abstract: No abstract text available
Text: 4K x 4 CMOS Cache-Tag Static RAM DESCRIPTION FEATURES □ 4K x 4 CMOS Static RAM with 4-bit Tag Com parison Logic □ High Speed Address-to-M A TCH — 10 ns m axim um □ Totem Pole L7C 180 or Open Drain (L7C 181) M ATCH O utput □ High Speed Flash Clear
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SSL4180,
SSL4181,
K41H80,
22-pin
24-pin
L7C181
L7C181WC
L7C180PC
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IMS1423P-35
Abstract: IMS1423P-45 elmos 347
Text: IMS1423 High Performance 4K x 4 CMOS Static RAM DDUTTOS* F EA T U R E S DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1.6 Micron Design Rules • 4K x 4 Bit Organization • 25,35,45 and 55 nsec Access Times • Fully TTL Compatible • Common Data Input & Output
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20-Pin,
300-mil
20-Pin
IMS1420
IMS1423
ti457
IMS1423
IMS1423P-35
IMS1423P-45
elmos 347
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