4MX16X4 Search Results

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

4Mx16x4

Abstract: 6416VESBM8G05TWJ udimm udimm pcb drawing
Contextual Info: 16M x 64 Bit PC100 SDRAM µDIMM PC100 SYNCHRONOUS DRAM MicroDIMM 6416VESBM8G05TWJ 144 Pin 16Mx64 SDRAM µDIMM Unbuffered, 8k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 16Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 4Mx16x4 (TSOP)

PC100

Abstract: SODIMM
Contextual Info: 16M x 64 Bit PC-100/133 SDRAM SODIMM PC-100/133 SYNCHRONOUS SMALL OUTLINE DRAM DIMM 6416VxSWM8G05TWK 144 Pin 16Mx64 SDRAM SODIMM Unbuffered, 8k Refresh, 3.3V with SPD General Description Pin Assignment The module is a 16Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 4Mx16x4 (TSOP)

SAMSUNG MCP

Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Contextual Info: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6

SAMSUNG MCP

Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
Contextual Info: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM

Samsung MCP

Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
Contextual Info: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM

PC133 133Mhz cl3

Abstract: PC100 DS851-0
Contextual Info: 16M x 64 Bit PC-100/133 SDRAM SODIMM PC-100/133 SYNCHRONOUS SMALL OUTLINE DRAM DIMM 6416VxSWM8G05TWE 144 Pin 16Mx64 SDRAM SODIMM Unbuffered, 8k Refresh, 3.3V with SPD General Description Pin Assignment The module is a 16Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 4Mx16x4 (TSOP)

pny 264

Abstract: PNY Technologies SDRAM 16M
Contextual Info: 16M x 64 Bit SDRAM DIMM PC100/133 SYNCHRONOUS DRAM DIMM 6416VsSEM8G05TWF 168 Pin 16Mx64 SDRAM DIMM Unbuffered, 8k Refresh, 3.3V with SPD Pin Assignment General Description Pin# The Module is a 16Mx64 bit, 5 chip, 168 Pin DIMM module consisting of 4 4Mx16x4 (TSOP)

SAMSUNG MCP

Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
Contextual Info: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

Flash MCp nand DRAM 107-ball

Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
Contextual Info: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

6416VESEM8G05TPF

Abstract: PC-100 9 tac PNY Technologies SDRAM 16M
Contextual Info: 16M x 64 Bit PC-100 SDRAM DIMM PC-100 SYNCHRONOUS DRAM DIMM 6416VESEM8G05TPF 168 Pin 16Mx64 SDRAM DIMM Unbuffered, 8k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The Module is a 16Mx64 bit, 5 chip, 168 Pin DIMM module consisting of 4 4Mx16x4 (TSOP)

IS42S16160D

Abstract: IS42S16160D-7TLI
Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

s5000vsa system status led blinking amber

Abstract: marking dh10 S5000VSA ATX POWER SUPPLY 600W circuit diagram 82563EB ATI ES1000 resolution mini pcie connector 52 pin vertical "Intel Server Board S5000VSA" system status led 600W atx motherboard canada ices 003 class b DDR
Contextual Info: Intel Server Board S5000VSA Technical Product Specification Intel order number – D36978-004 Revision 1.3 Dec. 2006 Enterprise Platforms and Services Division - Marketing 2 Revision History Intel® Server Board S5000VSA TPS Revision History Date April 2006

IS43DR83200A

Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
Contextual Info: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle

K934

Abstract: LZ9GG31 8c542 VXD1 switch K2961 ZENER3 UCB1300 lcd inverter board schematic MAX1692EUB VXD1
Contextual Info: Intel StrongARM* SA-1110 Development Board Schematics May 2000 Phase 5 Order No: 278279-006 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no

IS42S16160G-5BL

Abstract: IS42S83200G IS42S16160G5BL
Contextual Info: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 JANUARY 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

Contextual Info: IS42S83200B IS42S16160B ISSI 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2005 • Clock frequency: 166, 143 MHz OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a

IS42S16160D-7T

Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION JULY 2008 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

Contextual Info: IS43/46DR16160B 16Mx16 DDR2 DRAM PRELIMINARY INFORMATION NOVEMBER 2012 FEATURES DESCRIPTION •฀ VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V •฀ JEDEC standard 1.8V I/O SSTL_18-compatible •฀ Double data rate interface: two data transfers per clock cycle

Contextual Info: IS42R83200D, IS42R16160D IS45R83200D, IS45R16160D 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM FEATURES •฀ Clock฀frequency:฀133,฀100฀฀MHz •฀ Fully฀synchronous;฀all฀signals฀referenced฀to฀a฀ positive clock edge MARCH 2010 OVERVIEW

FABC96R

Abstract: uPD72255 STV-C-96-M-abc 821MD Ravin-E 32 pins connector B42 diode smd 23mD6 DIN41612 C64 MD-5 5VDC
Contextual Info: User’s Manual startWARE-GHS-Ravin-E Ravin-E Add-on Board for startWARE-GHS-VR4131 and startWARE-GHS-VR4133 Document No. U17316EE1V0UM00 Date Published September 2004  NEC Corporation 2004 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

PD23C64020

Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Contextual Info: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

4Mx16x

Abstract: 6416VESWM8G05TWE PC-100
Contextual Info: 16M x 64 Bit PC-100 SDRAM SODIMM PC-100 SYNCHRONOUS SMALL OUTLINE DRAM DIMM 6416VESWM8G05TWE 144 Pin 16Mx64 SDRAM SODIMM Formerly 6416VESWM8G05T Unbuffered, 8k Refresh, 3.3V with SPD Pin Assignment General Description Pin# The module is a 16Mx64 bit, 5 chip, 144 Pin