4N10L22 Search Results
4N10L22 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
4N10L22Contextual Info: IPG20N10S4L-22 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS on ,max4) 22 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature |
Original |
IPG20N10S4L-22 4N10L22 4N10L22 |