4S29 Search Results

Contextual Info: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n

SES14

Abstract: 45418 MCY4 si6334 SC375
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA , MC141535 LCD Segment / Common Driver CMOS M C141535 is a CM O S LC D D river which co nsists of 4 annunciátor out­ puts and 178 high voltage LC D drtvingsignals 17 ro w sa n d 1 6 1 s8 g m e rts . It h as parallel interface capability for operating with general M CU. B esid es

29F400-70

Abstract: programming 29F400 29f400 256KX16 AS29F400T-70S1 T00344 XX11110 JS2617 29F400-90
Contextual Info: A H i y l i P c r f o r n i a i H i' S I2K X 8/2S 6K X SV CM O S •■ I6 Flash F.FPR O M A S29F400 Î I 2 K X 8 / 2 5 6 K X 16 C M O S F l u s h F E P R O M Preliminary information Features • Organization: 512KX8 or 256KX16 • Sector architecture • Low pow er consum ption

S29F040

Abstract: TSOP8 ux305
Contextual Info: I t i gl i ’ (1r 11 I' 111 ,i I ]( r SI A \ S Z I 040 | | KxK S V C M O S I l.isli I M ’ K O M I .’ K x H CM O S H u sh I I P H O VI P re lim in a ry in fo rm atio n F eatures • Organization: 512KX8 • Sector architecture • Low power consumption

29LV008

Abstract: 29LV008-100 str g 5551 PJ 0199 AS29 AS29LV008B 29LV008-80 100S-C 9LV008-120TI
Contextual Info: H ig h p e rfo rm a n c e 8 M egabit 3V CMOS Flash EEPROM AS29LV008 II A 8 Megabit CMOS FJüsh EPRO M Advance information Features • Organization: 1M x 8 • Sector architecture • Low pow er consumption - 10 m A typical re a d c u rre n t - 3 0 m A typical p ro g ra m c u rre n t

4S29

Contextual Info: SHARP ìL _ u !y /n v A H Y July 1996 - FLASH MEMORY LH28F004SUB- Z9 \ SHARP CORPORATION LHF04SZ9

car ecu microprocessors

Abstract: 29f200-90 AS29F200T
Contextual Info: Hij>h Pi'rfornijMi i aa \S29I 200 A ¿ ' ¡ 6 k x 8 / l 2K K x l 6 SV CMOS Tl.isli H P ROM 2S6 K X 8 / I 2« Kx 16 CMOS Mush l-l.PKOM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 o r 1 2 8 K x 16 • L o w p o w e r c o n s u m p tio n

t4.00

Contextual Info: High Performa ih c AS29F400 A SI2KX8/2S6KXI6 ÇV C M O S F l , i s h F I P R O M S I 2 K x 8 / 2 S 6 K x 16 CM O S F lash FFPK O M Prelim inary inform ation Features •O rg an iz atio n : 5 1 2K x8 or 2 5 6 K x 16 • Sector architecture • Low p o w er consum ption

IN3599

Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5

29LV800

Abstract: s551 29LV800-120 i1-40q02-a 199S AS29LV800 0000H-3FFFFH 29LV8008
Contextual Info: H ig h p e r f o r m a n c e 1 M x 8 / 51 2 K x 1 6 3 V C M O S F la s h E E P R O M - I I A S29LV 800 , 1 M X 8 /5 1 2 K X 1 6 CMOS F lash EPROM Advance information Features • O r g a n i z a t i o n : 1M x 8 / 5 1 2 K x 16 • L o w p o w e r c o n s u m p t io n