4S514 Search Results

macrocell ecl

Abstract: 4S514
Contextual Info: HONEYWELL DIGITAL PRODUCT bb dË J 4SS14S3 0000D43 *=1 T-42-11-13 JUNE 1985 ECL GATE ARRAY HE8000 PRO DUCT DESCRIPTION The HE8000 Gate Array Figure 1 is a 250 picosecond, 8000 equivalent gate density Very Large Scale Integra­ tion (VLSI) monolithic integrated circuit built using

64 PIN CERDIP

Contextual Info: HONEYWELL DIGITAL PRODUCT bb D E * 4SS14S3 0000050 b • ■ ■ RAD HARD ECL/TTL GATE ARRAY PRODUCT DESCRIPTION The HM1000R Gate Array Figure 1 is an 800 pico­ second, 1000 equivalent gate density LSI monolithic integrated circuit built using Honeywell’s radiation

Contextual Info: HOA1406 Reflective Sensor tNfRA-84.TIF DESCRIPTION The HOA1406 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1406-001 or photodarlington (HOA1406-003) encased side-by-side on converging optical axes, in a black thermoplastic housing. The detector responds to

Contextual Info: HFD3380-302 Connectorized PIN PLUS Preamplifier FEATURES • Prealigned SC Connector sleeve • High speed a 1 GHz DESCRIPTION The HFD3380-302 is a high-performance 850 nm PIN P-Type / Instrinsic / N-type detector plus amplifier packaged for high-speed data communications. The

transistor a473

Abstract: A473 transistor conhex chip die npn transistor CML ECL compatible
Contextual Info: HONEYWELL "DIGITAL PRODUCT bt. dË | MSS1M5B ODOOOEt. T f' T-42-11-13 MARCH 1985 ECL GATE ARRAY HE2000 PRODUCT DESCRIPTION The HE2000 Gate Array Figure 1 is a 300 picosecond, 2000 equivalent gate density Very Large Scale Integration (VLSI) monolithic integrated circuit built using Honeywell’s

t4423

Contextual Info: HONEY WEL L DIGITAL PRODUCT hb D E j MSS14S3 OQOOOlfl 0 T-44-23' S AUGUST 1985 16K x 1 STATIC RAM HC6167R PRODUCT DESCRIPTION FEATURES The HC6167R is a 16,384-word by 1-bit static Random Access Memory RAM designed for strategic and tactical military applications. The HC6167R is fabricated