5 AMP NPN DARLINGTON POWER TRANSISTORS Search Results

D40CI

Abstract: TQ-202 D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734
Contextual Info: VERY HIGH GAIN D40C Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS .5 AMP, 6.25 WATTS Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-arnplifier, and capacitor multiplier applications. NPN COLLECTOR

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX602 ZTX603 ISSUE 1 – MARCH 94 FEATURES * 80 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 5 5 5 5 5 PARAMETER SYMBOL

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX604 ZTX605 ISSUE 1 – MARCH 94 FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 5 5 5 5 PARAMETER SYMBOL

TIP127 equivalent

Abstract: TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent
Contextual Info: TIP120,121, TIP122 NPN POWER DARLINGTON TRANSISTORS 60-100 VOLTS 5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP125, TIP126, TIP127 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features: • High collector power dissipation:

Contextual Info: h "7 > V 7, $ / Transistors 2SD1379 7 V —^ 2SD1379 NPN '> ,J = l> $ '- ,J > b > h y > y Z 5 i Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • ^ J K r iiiU /D im e n s io n s U n it: mm VJ‘ > 4 V C V ’kJlT 1) ? - ' ) > h > S ^ T ' h FE T * 5

GE6251

Abstract: GE6253 IR LF 0038 GE6252
Contextual Info: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS G E 6 2 5 1 ,2 ,3 450-55C VOLTS 10 AMP, 125 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultrasonic equipment and

D40C4

Abstract: D40C7 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 3 8 7 5 0 Í ^ G E SOLID STATE ~~Ql 3075001 001^037 4 ^ J ~ VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS T-33-29 D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed fordriver, regulator, touch switch, I.C. driver, audio output,'relay substitute, oscillator, servo~ampllfier, and

Contextual Info: FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 - JANUARY 1996_ FEATURES * * 60 Volt VCE0 Gain of 10K at lc=0.5 Amp PARTMARKING DETAILS - FMMT38A - 4J F M M T 3 8B -5 J F M M T 3 8 C -7 J

2N6350

Contextual Info: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 NPN POWER DARLINGTON 2N6350 thru 2N6353 5 AMP SWITCHING TRANSISTORS • • • • GEOMETRY 508 IC5A Low VCE Sat High Gain Monolithic Construction TO-33 MAXIMUM RATINGS cou£crou/c*a SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT

2SD1536

Contextual Info: 7 0 2 0 = ^ OOOSfl^S 4 B R H n MDE D ROHM CO LTD h 7 > s ' X $ /Transistors 2SD1536M/2SD1861 - 2 S D i 5 3 S ^ f l NPN ^ 7 ^ 2 7 -2 9 y lJ = i> ? -lJ > l'> b 7 > v Z $ Power Amp. 2SD1861 Epitaxial Planar NPN Silicon Darlington Transistors • tt*

U914

Abstract: 2SB1183F5 2SD1759F5 500C sie3
Contextual Info: h ~7 > y X 2 D 2SD1759F5 £ /Transistors I S 1 7 5 9 F U — f-M fcf * •* V NPN '> IJ =I > h 7 > V * if $ f - y > h > 8 N * 5 Epitaxial Planar NPN Silicon Transistor (Darlington) H $ fl:fr iS tiffl/l-o w Freq. Power Amp. • ÿt-ft^iÉüâ/D im ensions (Unit : mm)

2SD2009

Abstract: hFE-15000
Contextual Info: h "7 > V 7s $ /Transistors 2SD2009 2SD2009 * - y > b > & m Epitaxial Planar NPN Silicon Transistor (Darlington) /M e d iu m Power Amp. • £Hfi\f'iil3l/Dim ensions (Unit : mm) 1) h > f t » T ' * h FE T i > 5 o 6.5 + 0.2 3.4+0.2 hFE=15000 (Typ.) (V c e = 3V, lC= 5 00 m A )

Contextual Info: 2SD1759F5 I' 7 > y ^ í í / T ransistors 2S 1759F 5 D X tf $ # - I ' - i - M U > b NPN '> y =l > h - 7 $ > w m Epitaxial Planar NPN Silicon Transistor (Darlington) Freq. Power Amp. 1^ fti^ S ilS I/D im e n s io n s (Unit : mm) 1) 3 f - U > S > ii^ T 'S ih F E T '& 5 o

Contextual Info: h 7 > y X $ / T ransistors 2SD 1765 2SD1765 I fcf £ V NPN F> h 7 > V X ^ Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • — r liill/D im e n s io n s U n it: mm 1) V y n - z m - KrtBEo 2) ' K - ' X • 1 5 v SfSjlcJStStrtjKo 3) 7 < > H - A K 7 S o T l ' 5 / c

A 933 S transistors

Abstract: S T A 933 2SD1987
Contextual Info: 2SD1987 h 7 > y ^ ^ /T ra n s is to rs 2SD1987 h 7 > y X $ Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. • • i+Jfi^ iilS l/D im en sion s (Unit : mm) 1) u ; • h > í í i & i ? ' h FE 10.0 *•? 2) I 'V - X 4. 5 r 5 -y z-« • Features

2SC4895

Abstract: A13F
Contextual Info: h ÿ > v 7* $ / I ransistors 9 C C 4 8 Q 5 2SC4895 it ;^ ^ '> 7 ^ U - t lN P N v U 3 > h 7 > y X ^ ^ - U > h > ii Epitaxial Planar NPN Silicon Transistor (Darlington) 1£J§)j£iI2j*ilillffl/Low Freq. Power Amp. • £W2\f'>ilSI/Dimensions (Unit : mm) 1)

Contextual Info: k ~7> V 7. $ / T ransistors 2SD1759/2SD1759F5 2SD1759 2SD1759F5 I • ft* • ^ t ^ r t ji H / D im e n s io n s U n it: mm 1) $ - ' ) > t N P N h> h Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistors h > $ £ l*T 'a h F E T 'fe -5 o 2) B Eg|C *<)4kQ <0ffiSiSrtiiEo

2SD1986

Contextual Info: h 7 > v X $ /Transistors x t'$ * y 7 J l'7 U -j-B N P N 2SD1986 • 2SD1986 # - v > b>mm Epitaxial Planar NPN Silicon Transistor (Darlington) Freq. Power Amp. • it-ffi^ j'iiE I/D im e n s io n s (U n it: mm) f t f t 1) j f - i j > hFE 2 ) a . - x • x 5 -y

2SD2195

Contextual Info: h "7 > y / I ransistors 2SD2195 2SD 2195 X M$ * y 7 J\>-f Is - +MNPN V lJ □ > h 7 > V * 2 Epitaxial Planar NPN Silicon Transistor Darlington /M e d iu m Power Amp. • il-ffi rfi&H/Dimensions (U nit: mm) 1) IJ > h hFE 2) K fcrtK 3) A . - X • x = 4) Pc = 2 W T 'a fe 5

2SD1783

Contextual Info: Is 7 > V £ / T ransistors 2SD1783 2SD1783 i t N P N y u n > ^ - u > h> V y ' s v Z V Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • \fi£ED/Dim ensi6ns U n it: mm NiryiV;Vdi-7- 1) =i u ? 3 • A : - ^ f y 5 C 6 0 V ( p 'y x ^ - $ -i T - K £ r t i t

2SD1783

Abstract: 2A 5v ZENER DIODE 60V transistor npn 2a FE2000
Contextual Info: Y - j s v T s * ? / Transistors 2SD1783 2S D 1783 I t N P N h> h ÿ > y 'z $ M M M M t J i ^ ^ F S / L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • W fé\f">£ /D im en siô n s Unit : mm S ir > J V ;V ^ T 1) =1 K 7 ^ • /K‘-7 .^ tC 6 0 V C 0 'y x ± 4. 5±0.2

SK3180

Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
Contextual Info: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current

SK9458

Abstract: SK9446 SK9447 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9444 SK9450
Contextual Info: THOMSON/ DISTRIBUTOR B IPO LAR TRANSISTORS 5ÛE D • TQ2tjfl73 0 0 0 4 0 3 7 TST com. Maximum Ratings TCE Type Device Polarity & M aterial Breakdown Voltages Application 'complementary device type SK9443 PNP/Si Preamp Input Circuits - NPN/Si Microwave Low-Noise Amp for CATV,

SK3893

Abstract: sk3896 SK3936 SK3935 SK3862 SK3865A SK93 sk3948 SK3897 sk3895
Contextual Info: •^THOflSON/ K B DISTRIBUTOR BIPOLAR TRANSISTORS SflE D cont ■ . =105^073 0 0 0 4 5 5 5 13fl ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application Ccomplementary device type Device Power Dissipata Collector Current