5.9 PACKAGE DIAGRAMS Search Results

B144

Abstract: G145 U162 5.9 Package Diagrams 145-PIN
Contextual Info: 5.9 Package Diagrams 145ĆPin Plastic Grid Array Cavity Up B144 5-96 Package Diagrams 145ĆPin Grid Array (Cavity Up) G145 5-97 Package Diagrams 160ĆLead Plastic Quad Flatpack N160 5-98 Package Diagrams 160ĆLead Ceramic Quad Flatpack U162 5-99

B144

Abstract: G145 U162
Contextual Info: 5.9 Package Diagrams 145-Pin Plastic Grid Array Cavity Up B144 5-85 Package Diagrams 145-Pin Grid Array (Cavity Up) G145 5-86 Package Diagrams 160-Lead Plastic Quad Flatpack N160 5-87 Package Diagrams 160-Lead Ceramic Quad Flatpack (Cavity Up) U162 5-88

2SA2013

Abstract: FX513 O1002 2SA20
Contextual Info: Ordering number : ENN7335 FX513 PNP Epitaxial Planar Silicon Transistor FX513 DC-DC Converter Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2118 Features 0.5 1.5 1.5 6 0.7 5 1.0 • 5.0 5.9 • [FX513]

LED 10000 mcd

Abstract: LED 18000 mcd ovl55 LED 13000 mcd OVL-3321 OVL-55 OVL-5526 OVL-5523 LED 5mm white High brightness 18000 MCD OVL-5528
Contextual Info: 5.0mm Round LED Lamp OVL-55 Series 0.5 Square x2 Features: • Standard 5mm round package • High luminous output • Water clear lens 0.5 MAX. Anode Cathode 1.5 TYP. 5.9 8.7 24.0 MIN. Maximum Ratings at Ta=25 C Reverse Voltage <100 µA . 5.0V

B5_435_TL

Contextual Info: B5-435-TL Super Bright Red LED Lamp T-1 3/4 5mm PACKAGE DIMENSIONS 1 MAX. 5 ± 0.2 □ 0.5 ANODE 2.54 1.0 MIN. 1.0 ± 0.2 8.6 ± 0.3 5.9 ± 0.3 26.4 MIN. NOTE: 1.All dimensions are in millimeter. 2.Lead spacing is measured where the lead emerge from the package.

Contextual Info: TPCA8063-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCA8063-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.9 nC (typ.)

Contextual Info: TPCA8063-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCA8063-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.9 nC (typ.)

Contextual Info: TPCA8063-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCA8063-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 5.9 nC (typ.)

Contextual Info: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One

5240G

Contextual Info: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9

2SJ416

Abstract: FX856 SB07-03P 53723
Contextual Info: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One

GPS05094

Contextual Info: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9

INFINEON PART MARKING BTS

Abstract: SCR gate Control IC GPS05094
Contextual Info: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Product Summary Operating voltage Package V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9

ULTRA VIOLET LED

Contextual Info: B5-437-CVD ROITHNER LASERTECHNIK Schoenbrunner Str. 7 / B, Vienna, Austria office@roithner-laser.com, www.roithner-laser.com T-1 3/4 5mm Ultra Violet LED Lamp 2001/08/27 PACKAGE DIMENSIONS 1 MAX. ¡¼ 0.5 2.54 5 ¡Ó 0.2 5.9 ¡Ó 0.3 1.0 MIN. ANODE 8.6 ¡Ó 0.3

Contextual Info: TPC8063-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8063-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 5.9 nC (typ.)

TPC8063

Abstract: TPC8063-H
Contextual Info: TPC8063-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8063-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 5.9 nC (typ.)

tpca8063

Contextual Info: TPCA8063-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCA8063-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 5.9 nC (typ.)

AD8072

Abstract: AD8072ARM AD8072ARM-REEL AD8072ARM-REEL7 AD8072JN AD8072JR AD8072JR-REEL AD8072JR-REEL7 AD8073
Contextual Info: a FUNCTIONAL BLOCK DIAGRAMS 8-Lead Plastic N , SOIC (R), and ␮SOIC (RM) Packages The AD8072 (dual) and AD8073 (triple) are low cost, current feedback amplifiers intended for high volume, cost sensitive applications. In addition to being low cost, these amplifiers

op closed-loop

Abstract: AD8072 AD8072ARM AD8072ARM-REEL AD8072ARM-REEL7 AD8072JN AD8072JR AD8072JR-REEL AD8072JR-REEL7 AD8073
Contextual Info: a FUNCTIONAL BLOCK DIAGRAMS 8-Lead Plastic N , SOIC (R), and ␮SOIC (RM) Packages The AD8072 (dual) and AD8073 (triple) are low cost, current feedback amplifiers intended for high volume, cost sensitive applications. In addition to being low cost, these amplifiers

MC10180

Abstract: MC10137 MC10141 MC10537 MCM10140 MCM10142 MCM10143 MCM10144 MCM10145 MCM10147
Contextual Info: 10.000 LOGIC DIAGRAMS N u m b e r s in p a r e n t h e s i s d e n o t e p i n n u m b e r s f o r F p a c k a g e Case 6 5 0 F U N C T IO N S A N D C H A R A C T E R IS T IC S (c o n tin u e d ) T yp e P ro p a g a tio n P o w e r D is s ip a tio n

A114

Abstract: A115 C101 JESD22 MC74VHC1GT08
Contextual Info: MC74VHC1GT08 2−Input AND Gate/CMOS Logic Level Shifter MARKING DIAGRAMS 5 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A 5 M The MC74VHC1GT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL

MPX2052D

Abstract: MPX2050DP amplifier circuits biomedical sensors strain gauge amplifier 102 MGS1100 MGS1200 mpx2052 MMAS40G10D DEVB173 MPX 1,45 psi
Contextual Info: Sensors In Brief . . . Motorola’s Sensor Products Division features three SENSEON families of acceleration, chemical and pressure sensor products. These sensors combine silicon micromachining with semiconductor technology and processes for highly reliable, repeatable sensor products.

Contextual Info: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter http://onsemi.com MARKING DIAGRAMS 5 1 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A 5 M The MC74VHC1GT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves

and gate cmos

Abstract: A114 A115 C101 JESD22 MC74VHC1GT08
Contextual Info: MC74VHC1GT08 2−Input AND Gate/CMOS Logic Level Shifter http://onsemi.com MARKING DIAGRAMS 5 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A 5 M The MC74VHC1GT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves