5001000MHZ Search Results

Contextual Info: Surface Mount Directional Couplers 75Ω DBTC-20-4-75+ DBTC-20-4-75L+ 5 to 1250 MHz Maximum Ratings Features Operating Temperature • • • • • • • -40°C to 85°C Storage Temperature -55°C to 100°C Pin Connections INPUT 3 OUTPUT 4 COUPLED 1 GROUND

NPTB00004

Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
Contextual Info: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for

ELXY

Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
Contextual Info: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

Contextual Info: 0 to 70 dB Rotary Step Attenuator, BNC Female To BNC Female With 10 dB Step Rated To 1 Watt Up To 2 GHz TECHNICAL DATA SHEET PE7034-4 Configuration Design Connector 1 Connector 2 Body Material and Plating Step, Bidirectional Attenuator BNC Female BNC Female

NPT1007

Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
Contextual Info: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

high frequency mixer

Abstract: I860 MXB-1002-3
Contextual Info: ♦♦♦♦♦ w PREMIER DEVICES MXB-1002-3 Surface Mount Mixer F eatu res • Wideband:Frequency Range 500-1000MHz • Low conversion loss 7dB typical • LO drive:+3dBm • Industry standard surface mount package: S07 • Low cost Description Absolute Maximum Ratings

10-017

Contextual Info: ♦♦♦♦♦ w PREMIER DEVICES MXB-1001-7 Surface Mount Mixer F eatu res MXB1001-7 - 020103 S& V , • Frequency Range 500-1000MHz • Low conversion loss 7dB typical • LO drive:+7dBm • Industry standard surface mount package: S07 • Low cost Description

REC70

Abstract: chipcon T159-1 CFR47 frequency hopping spread spectrum 900 REC7003E marking 2nw REC-70 an-001
Contextual Info: Application Note AN001 AN001 SRD regulations for licence free transceiver operation By P. M. Evjen Keywords • • • • • CEPT recommendations • ETSI standards • R&TTE directive Part 15 devices Type approval Equipment testing Operating frequency below 1GHz

NPTB00025

Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
Contextual Info: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

NPT25100

Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader

Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

ZDC-10-2

Contextual Info: Non-Catalog Model Directional Coupler ZDC-10-2 Important Note This is a non-catalog model and can be manufactured on specific request. Pricing and delivery information can be supplied upon request. Please click "Back", and then click "Contact Us" for Applications support.

LF2805A

Abstract: J286
Contextual Info: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration

TB207

Abstract: UT85 coax LB401 NJM78L08A UT85-15 UT85-50 120PF
Contextual Info: 15 30 45 60 75 90 105 30 60 90 120 1 1 2 2 4 P in in W a tts 5 6 7 8 3 4 5 6 P in in W a tts Efficiency @ 65W= 31% 7 TB207 LB401 Freq=750MHz Vds=28Vdc Idq=1.6A 3 Efficiency @ 65W = 43% Linear @12W P1dB=65W 8 TB207 LB401 Freq=500MHz Vds=28Vdc Idq=1.6A 9 9 10

NPT1010

Abstract: a114 est J22 transistor AC360BM-F2 EAR99 JESD22-A114 JESD22-A115 49dBm nrf1 Nitron
Contextual Info: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz

433mhz 500mw

Abstract: AN1772 APP1772 260-470MHz 640nW
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: short range devices, SRD, FCC Part 15, ETSI EN 300-220 Oct 21, 2002 APPLICATION NOTE 1772 Where to Go for Regulations Concerning Short-Range Devices SRD Abstract: Even though the use of short-range devices does not require a license, the products themselves are

NPTB00004

Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.

Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

Contextual Info: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

MPZ1608D101B

Abstract: MMZ2012Y202B by tdk 1608B MPZ2012S331A MPZ1608S221A
Contextual Info: Conforming to RoHS Directive Low-Rdc And High-Impedance Multilayer Chip Beads For Signal Lines, MMZ series 0402 type Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and

DBTC-10-4-75L

Abstract: DBTC-13-5-75L DBTC-18-4-75L
Contextual Info: DIRECTIONAL COUPLERS Designer's Kit K4-DBTC-75L+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! 5 to1500MHz DBTC-75L+ Features Very broadband, multi-octave, 75Ω Very flat 9,10,12,13,16 and 18dB coupling • Temperature stable LTCC base • All welded construction

S0239

Abstract: CX-210N CX-210A AF 239 RADIO COMPONENTE n71l dk50 nb71 codigo componente
Contextual Info: Issued / Herausgegeben / Publicado / Publication Publicatto / Udgivet / Afgegeven / Utgiven V10973 02/2004 50 OHM RF Coaxial Switches Koaxiale 50-Ohm-Hochfrequenzschalter Instruction Leaflet Bedienungsanleitung Hojas de instrucciones Feuille d’instructions

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security