ELXY Search Results

ELXY

Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
Contextual Info: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz

Contextual Info: UM10689 SSL2109ADB1121 4-channel DC-to-DC LED driver demo board Rev. 1.1 — 13 May 2013 User manual Document information Info Content Keywords SSL2109T, SSL2109AT, SSL2109ADB1121, buck, controller, reference board, LED driver, PWM Abstract This document explains the operation and application of the SSL2109AT

1001N

Abstract: ELXY250E331MH20D lxy cap ELXY500E ELXY160E471MJ16S ELXY500E181MJ20S
Contextual Info: リード形・低インピーダンス品（105℃） 標準品 低Z 耐洗浄 RoHS指令 適合品 LXZ 低Z化 小形化 ● 新規高安定・高導電率電解液高信頼性技術の採用。 ● LXY 105℃ 2,000 ~ 8,000 時間保証。（リプル重畳）

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

ELXY250ESS471MJ20S

Abstract: ELXY350E ELXY500ESS331MK20S 3300 mf 35v E1001E 1000MF 120MF 2200MF ELXY250ESS331MH20D ELXY100ESS182MK20S
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High reliability, Low impedance, 105C LXZ lower Z downsized @Newly innovative electrolyte and internal architecture are employed @Endurance with ripple current : 105C 2000 to 8000 hours @Solvent-proof type see PRECAUTIONS AND GUIDELINES

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High reliability, Low impedance, 105℃ LXY LXZ P158 Series Lower Z Downsized ・Adoption of innovative electrolyte and new technologies ・Endurance with ripple current : 2,000 to 8,000 hours at 105℃ ・Solvent resistant type see PRECAUTIONS AND GUIDELINES

NPTB00025

Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
Contextual Info: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

NPT25100

Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
Contextual Info: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

Contextual Info: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package

Contextual Info: UM10478 High-efficiency UBA3070 4-channel DC-to-DC LED driver demo board Rev. 2 — 24 May 2012 User manual Document information Info Content Keywords UBA3070, street, high bay lighting Abstract This document explains the operation and application of the UBA3070

Contextual Info: NPT1015 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-3.5 GHz 28V Operation Industry Standard Package

Contextual Info: NPT1015 Gallium Nitride 28V, 50W, DC-2.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-2.5 GHz 28V Operation Industry Standard Package

sot23-5 transistor T1

Abstract: SC70JW-8 3216 capacitor LDO sot23 CA SOT23-5 sot23 "material composition" sot23 material composition SOT23-5 REGULATORs t1 SOT23-5 AAT3216
Contextual Info: AAT3216 150mA MicroPower LDO with PowerOK General Description Features The AAT3216 MicroPower™ Low Dropout Linear Regulator is ideally suited for portable applications where low noise, extended battery life and small size are critical. The AAT3216 has been specifically designed for low output noise performance,

ELXY500E

Abstract: ELXY350E ELXY ELXY160E ELXY350 120MF 3516b ELXY35 LXV LXY ELXY250E
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High reliability, Low impedance, 105C LXZ Lower Z Downsized @Newly innovative electrolyte and internal architecture are employed @Endurance with ripple current : 2,000 to 8,000 hours at 105C @Solvent resistant type see PRECAUTIONS AND GUIDELINES

Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

NPT25100

Abstract: PIMD3
Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

Contextual Info: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package

Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power

Contextual Info: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

ELXY350E

Abstract: ELXY 120MF ELXY100E
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High reliability, Low impedance, 105C LXZ Lower Z Downsized @Adoption of innovative electrolyte and new technologies @Endurance with ripple current : 2,000 to 8,000 hours at 105C @Solvent resistant type see PRECAUTIONS AND GUIDELINES

EKMA160

Abstract: ELXY EKMG401E101ML40S EKMG101E KZA No809 No809 CE692 EMVE160ADA100MD55G ELXZ250E471MJ16S 342AL
Contextual Info: アルミ電解コンデンサ CAT.No.1001N 目 次 製品検索 製品一覧表 製品体系図 使用上の注意（アルミ非固体） 品番体系 環境対応 製品ガイド 包装仕様 テーピング仕様 シリーズ統廃合 海外生産拠点

mvs 100

Abstract: EKZH 1001N CE692 EMVE160ADA100MD55G EGPA250E562MM35S EMKB401ADA3R3MJA0G EKZH250E151MF11D e55 f55 f61 EKMA160
Contextual Info: アルミ電解コンデンサ CAT.No.1001N 新しい品番体系に移行させて頂きました。 ホームページ上で新旧品番の照会をして頂くことができます。 こちらからアクセスして頂けます。 目 次 製品検索