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    rc4191

    Abstract: sm 0038 PIN DIAGRAM mosfet 800 watt circuit diagram OF INVERTER Nytronics max630 Nytronics WEE
    Text: > i/ i> jx iy k i _General Description -Features Maxim’s MAX630 and MAX4193 C M O S DC-DC regulators are designed for simple, efficient, minimum size DC-DC converter circuits in the 5 milliwatt to 5


    OCR Scan     		PDF MAX630 MAX4193 375mA rc4191 sm 0038 PIN DIAGRAM mosfet 800 watt circuit diagram OF INVERTER Nytronics Nytronics WEE

    ballast electronic hps

    Abstract: TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18006* M JF18006* Designer’s Data Sheet SWITCHMODE™ ‘ Motorola Preferred Dtvlct NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS


    OCR Scan     		PDF MJE/MJF18006 O-220 O-220 MJF18006, ballast electronic hps TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006

    12n60a4

    Abstract: IGBT 12n60a4 TP12N60A4 12n60a T1S12N60A4S 12N60 transistor BT 139 F applications note HGTG12N60A4
    Text: HGTP12N60A4, HGTG12N60A4, HG T1S12N60A4S Data Sheet May 1999 File Number 600V, SM PS S e rie s N -C h a n n e l IG B T F e a tu re s The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		PDF TP12N60A4, 12N60A4, T1S12N60A4S HGTP12N60A4, HGTG12N60A4 HGT1S12N60A4S TA49335. O-220AB 12n60a4 IGBT 12n60a4 TP12N60A4 12n60a 12N60 transistor BT 139 F applications note

    12n60a4

    Abstract: IGBT 12n60a4 12n60a TA49335 hgtg12n60a4 SS LSE 0530 T1S12N60A4S
    Text: HGTP12N60A4, HGTG12N60A4, HG T1S12N60A4S D ata S h eet M ay 1999 F ile N u m b er 600V, SMPS Series N-Channel IGBT Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		PDF HGTP12N60A4, HGTG12N60A4, T1S12N60A4S HGTG12N60A4 HGT1S12N60A4S TA49335. O-220AB 12n60a4 IGBT 12n60a4 12n60a TA49335 SS LSE 0530 T1S12N60A4S

    300w hf mosfet power amplifier circuit diagram

    Abstract: 300w hf power amplifier circuit diagram nondissipative snubber LT1508 P1205 lt1248 Transistor 2TY
    Text: r r u n m _LT1509 TECHNOLOGY Power Factor and PWM Controller F€OTUR€S DCSCRIPTIOn • PFC and PWM Single Chip Solution ■ Synchronized Operation up to 300kHz ■ 99% Power Factor over 20:1 Load Current Range ■ Current Mode PWM


    OCR Scan     		PDF LT1509 LT1248 LT1508 500kHz 16-Lead P1205 300w hf mosfet power amplifier circuit diagram 300w hf power amplifier circuit diagram nondissipative snubber Transistor 2TY

    Untitled

    Abstract: No abstract text available
    Text: r r w LT1508 m TECHNOLOGY Power Factor and PWM Controller Voltage Mode FenTURCS DCSCRIPTIOn • PFC and PWM Single Chip Solution ■ Synchronized Operation up to 300kHz ■ 99% Power Factor Over 20:1 Load Current Range ■ Voltage Mode PWM ■ Instantaneous Overvoltage Protection


    OCR Scan     		PDF LT1508 300kHz 250nA 500kHz LT1247 LT1248 16-Lead LT1249 LT1509 ffi-19lÂ

    IGBT 12n60a4D

    Abstract: No abstract text available
    Text: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Semiconductor F eb ru ary 1999 D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS TA49335. TA49371. 1-800-4-HARRIS IGBT 12n60a4D

    allen bradley 10k pot

    Abstract: No abstract text available
    Text: y y j x i y n CMOS M icrop ow er S tep -U p S w itc h in g R eg u lato r General Description Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum size DC-DC converter circuits in the 5 milliwatt to 5 watt range. The MAX630 and MAX4193 provide all


    OCR Scan     		PDF Efficiency--85% 70/iA 525mA MAX630) MAX630 MAX4193 375mA allen bradley 10k pot

    motorola bipolar transistor

    Abstract: MOTOROLA TRANSISTOR BUD42D
    Text: MOTOROLA Order this document by BUD42D/0 SEMICONDUCTOR TECHNICAL DATA BUD42D Designer’s Data Sheet High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Hetwork and a Transient Voltage Suppression Capability POWER TRANSISTORS 4 AMPERES


    OCR Scan     		PDF BUD42D/0 BUD42D BUD42D BUD42D: 69A-13 motorola bipolar transistor MOTOROLA TRANSISTOR