500R07S1R2 Search Results

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

250R05L470JV4T

Abstract: 500R07S3R6BV4T 500R07S0R3AV4T 2 SC 1239 250R05L1R5BV4T 251R14S2R4BV4T 500R07S0R3AV4 251R14S3R0BV4T 251R15S8R2CV4E 302R29W102KV4E
Contextual Info: MLCC Capacitors High Voltage and TANCERAM® Cont. Size Code Type 1206 X5R X5R 1210 Y5V 1812 X5R WV DC Capacitance 6.3 10µF 10 3.3µF 10 4.7µF 16 4.7µF 6.3 22µF 6.3 100µF 16 10µF 25 4.7µF 25 10µF 10 22µF 6.3 100µF 16 22µF Capacitance Tolerance

920MHz

Abstract: RFMD PA LTE class c tuned amplifier
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

2450AT18B100

Abstract: L-07C2N7SV6T L-07C3N3SV6T
Contextual Info: "High Frequency Ceramic Solutions" 2450 MHz Antenna P/N 2450AT18B100 Page 1 of 3 Detail Specification: 08/10/09 General Specifications Part Number 2450AT18B100 Input Power 3W max. Frequency Range 2400 - 2500 Mhz Impedance 50 Ω Peak Gain 0.5 dBi typ. XZ-V

x cap

Abstract: Johanson Technology johanson antenna
Contextual Info: "High Frequency Ceramic Solutions" 5.775 GHz Antenna P/N 5775AT43A100 Page 1 of 5 Detail Specification: 03/09/05 General Specifications 5775AT43A100 5725 - 5825 Mhz 3.9 dBi typ. XZ-V -1.5 dBi typ. (XZ-V) 9.5 dB min. Part Number Frequency Range Peak Gain

Contextual Info: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug

Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz  0.5W Output Power P1dB  NF = 3.8dB at 2140MHz  Gain = 15.7dB at 2140MHz  Power-down Capability NC 1 RFIN 2 RFIN 3 NC 4 VREF NC VBIAS 14 13 12 NC BIAS CIRCUIT 11 RFOUT/VCC

UMK105cg

Abstract: 500R07S1R2 GSM WCDMA repeater circuit LQP15MN 500R07S RFMD PA LTE DS120611 RFPA3800 500r07 MuRata Electronics Kamaya
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

GRM155R71C104KA88D

Abstract: Emerson 142-0741-851 murata date code GRM155R71C104KA88D MPSS100-4-C GRM1555C1H330JZ01E panasonic date code 142-0741-851 500R07S1R2 C9-C21 ERJ-2GEJ560
Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz 0.5W Output Power P1dB  NF = 3.8dB at 2140MHz  Gain = 15.7dB at 2140MHz  Power-down Capability 1 RFIN 2 RFIN 3 NC 4    VREF NC VBIAS 12 NC BIAS CIRCUIT 11 RFOUT/VCC

Contextual Info: MRF24J40MC Data Sheet 2.4 GHz IEEE Std. 802.15.4 RF Transceiver Module with PA/LNA and External Antenna Connector 2011 Microchip Technology Inc. Preliminary DS75002A Note the following details of the code protection feature on Microchip devices: •

RFA-02-5-F7H1-70B-150

Abstract: DS39776 RFA-02-5-F7H1 C code for 2.4 GHZ rf transmitter using PIC UPG2179TB-E4-A MRF24J40MC material declaration vishay RFA-02 MRF24J40MCT OA3MRF24J40MC
Contextual Info: MRF24J40MC Data Sheet 2.4 GHz IEEE Std. 802.15.4 RF Transceiver Module with PA/LNA and External Antenna Connector 2011 Microchip Technology Inc. Preliminary DS75002A Note the following details of the code protection feature on Microchip devices: •

Contextual Info: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features „ High Linearity: OIP3=43dBm at 880MHz „ Low Noise: NF<4dB „ Low DC Power: 5V, 90mA „ 400MHz to 2700MHz Operation „ Thermally Enhanced Slug

Contextual Info: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug

Contextual Info: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features „ High Linearity: OIP3=43dBm at 880MHz „ Low Noise: NF<4dB „ Low DC Power: 5V, 90mA „ 400MHz to 2700MHz Operation „ Thermally Enhanced Slug

251R14S1R8

Abstract: 250R07 500r07 500R07S2R2 250R07C0R2 500R07S5R6 251R14S430 250R07C 500R07S1R8 Cross Reference
Contextual Info: C-Series to S-Series Cross Reference The Johanson Technology JTI C-Series capacitor product line does not meet the Reduction of Hazardous Substances (RoHS) specification because these products contain a small amount of Cadmium (Cd). Because of this, we are phasing out the

GRM1555C1H101JZ01D

Abstract: BLM18EG221SN1D PBC02SAAN RMC1/16JPTP PA380 UMK105BJ102KV-F RFPA3807 UMTS2100 l0402 GRM1555C1H101JZ
Contextual Info: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug

EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.

MPSS100-4-C

Abstract: GRM155R71C104KA88D RFMD PA LTE
Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz 0.5W Output Power P1dB „ NF = 3.8dB at 2140MHz „ Gain = 15.7dB at 2140MHz „ Power-Down Capability VREF NC VBIAS 13 NC 1 RFIN 2 11 RFOUT/VCC RFIN 3 10 RFOUT/VCC NC 4 12 NC BIAS

Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=3.2dB at 945MHz  5V to 7V Operation

MPSS100-4-C

Abstract: panasonic MSL level rfmd model marking code RFMD PA LTE
Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz NC VREF NC VBIAS Package: QFN, 16-Pin, 3mmx3mm 16 15 14 13 Features NF=3.8dB at 2140MHz  Gain=15.7dB at 2140MHz  Power-down Capability Applications     2 RFIN 3

MPSS100-4-C

Abstract: ITW Pancon
Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz Features  -60dBc ACPR at 15.5dBm WCDMA 0.5W Output Power P1dB  NF = 3.8dB at 2140MHz  Gain = 15.7dB at 2140MHz  Power-Down Capability 1 RFIN 2 RFIN 3 NC 4 VREF NC VBIAS