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50113Q Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1015 Contextual Info: I t i 50113Q 00M0S31 MBS I Consumer Series Consumer Series continued y ceo V EBO (V) Min (V) Min (V) Min TO-92 (92) 50 40 5 50 CS9015C TO-92 (92) 50 40 5 CS9016F TO-92 (92) 30 20 CS9016H TO-92 (92) 30 CS9018D TO-92 (92) CS9018F Device No. Case Style CS9014C	OCR Scan	50113Q 00M0S31 CS9014C CS9015C CS9016F CS9016H CS9018D CS9018F CS9Q18G CS9018I 2SA1015	PDF
J111 national Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a Contextual Info: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.	OCR Scan	MMBFJ111 MMBFJ112 MMBFJ113 OT-23 D0M0T33 J111 national J112 J113 25CC J111 MMBFJ113 MARK 6C SOT-23 k20a	PDF
dual P-CHANNEL 30V DS MOSFET Abstract: NDS8958 Dual N & P-Channel MOSFET Contextual Info: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	NDS8958 035fi b5D113D dual P-CHANNEL 30V DS MOSFET NDS8958 Dual N & P-Channel MOSFET	PDF

Catalog Datasheet

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2SA1015

Contextual Info: I t i 50113Q 00M0S31 MBS I Consumer Series Consumer Series continued y ceo V EBO (V) Min (V) Min (V) Min TO-92 (92) 50 40 5 50 CS9015C TO-92 (92) 50 40 5 CS9016F TO-92 (92) 30 20 CS9016H TO-92 (92) 30 CS9018D TO-92 (92) CS9018F Device No. Case Style CS9014C

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50113Q 00M0S31 CS9014C CS9015C CS9016F CS9016H CS9018D CS9018F CS9Q18G CS9018I 2SA1015

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J111 national

Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
Contextual Info: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.

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MMBFJ111 MMBFJ112 MMBFJ113 OT-23 D0M0T33 J111 national J112 J113 25CC J111 MMBFJ113 MARK 6C SOT-23 k20a

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dual P-CHANNEL 30V DS MOSFET

Abstract: NDS8958 Dual N & P-Channel MOSFET
Contextual Info: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

OCR Scan

NDS8958 035fi b5D113D dual P-CHANNEL 30V DS MOSFET NDS8958 Dual N & P-Channel MOSFET

PDF