501241 Search Results

5SLA 3600E170300

Abstract: 5SYA2039 3600E170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

RC16M23K

Abstract: souriau sms RM16M23K NF railway standards 16102 50306-2 IS 16102 PART 1
Contextual Info: SMS IP SMS IP: high voltage sealed plastic connector A connector designed for indoor railway equipments, using the standard Ø 1.6 contact. Safe Compliant to fire and smoke standards Sealed Easy to handle Designed for railways Finger proof High operating voltage up to 500 V

resistor 2200 ohm

Contextual Info: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM

Contextual Info: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power

THB 3-2423

Abstract: THB3 2423 DIP-24 THB 3-0515 THB 3-1215
Contextual Info: DC/DC Converters THB 3 Series, 3 Watt CB Scheme Features ◆ Supplementary and reinforced insulation UL 60950-1 UL 60601-1 for working voltages up to 300 VAC ◆ I/O isolation 4000 VACrms ◆ Isolation test voltage 6000 Vpk ◆ Wide 2:1 input voltage ranges

EN55022A

Contextual Info: DC/DC Converter THP 3 Series 3 Watt High Isolation Features I/O-Isolation Voltage of 4000VAC Clearance and Creeping Distances min. 2.0mm Basic-, Supplementary- and Reinforced Insulation for Working Voltages up to 420VDC / 300VAC Ultra wide 4:1 Input Ranges:

EN55022A

Abstract: 18-80VDC
Contextual Info: DC/DC Converter THP 3 Series 3 Watt High Isolation Features I/O-Isolation Voltage of 4000VAC Clearance and Creeping Distances min. 2.0mm Basic-, Supplementary- and Reinforced Insulation for Working Voltages up to 420VDC / 300VAC Ultra wide 4:1 Input Ranges:

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

5SLD0650J450300

Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 PRELIMINARY Doc. No. 5SYA 1599-00 Nov 07 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
Contextual Info: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3

5SYA2042

Abstract: 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

5SNA1200G450300

Abstract: 1200G450300 cosmi
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 PRELIMINARY Doc. No. 5SYA 1401-00 Dec 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

IC 7400 configuration

Abstract: 5SNA1200G450300
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-01 Mar 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

cosmi

Contextual Info: Data Sheet, Doc. No. 5SYA 1407-05 06-2012 5SNA 1500E330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 1500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SNA1000G450300

Abstract: cosmi 5SNA 1000G450300
Contextual Info: VCE IC = = 4500 V 1000 A ABB HiPakTM IGBT Module 5SNA 1000G450300 PRELIMINARY Doc. No. 5SYA 1597-00 Oct 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: Data Sheet, Doc. No. 5SYA 1426-00 05-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-01 May 08 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

5SLD0650J450300

Abstract: Abb diode ABB Switzerland
Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-02 Jan 09 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 Doc. No. 5SYA1532-02 June 04 • Low-loss, rugged IGBT SPT chip-set • EMC friendly switching characteristics • Low profile compact baseless package for good power cycling • Suitable for snap-on gate-driver

Contextual Info: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-04 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability

5SYA2039

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

IGBT CHIP 600V ABB

Contextual Info: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Apr 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 PRELIMINARY Doc. No. 5SYA 1598-00 Nov 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power