COSMI Search Results
COSMI Datasheets Context Search
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COSMIC
Abstract: cxst7 IEEE-695
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D-70329 COSMIC cxst7 IEEE-695 | |
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 5500 585 18 4.5 1.3 3300 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating |
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08H6005 5SYA1116-01 CH-5600 | |
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 435 16 2.42 2.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05F4502 Doc. No. 5SYA1151-01 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating |
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05F4502 5SYA1151-01 CH-5600 | |
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 810 24 2.42 1.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating |
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10H4502 5SYA1115-03 CH-5600 | |
stmicroelectronics assembly site date code format
Abstract: cross compiler user guide st7 AN978 AN983 IEEE-695 CHEX
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AN983 stmicroelectronics assembly site date code format cross compiler user guide st7 AN978 AN983 IEEE-695 CHEX | |
Contextual Info: ULTRA-LARGE-AREA SILICON DETECTORS AND PSDs HAMAMATSU PRODUCT BULLETIN PB-162 June 1988 Ultra-large-area silicon detectors made of full 4” wafer For energy measurements of cosmic rays and other high energy particles H am am atsu has d e v e lo p e d and p ro d u ce d u ltra -la rg e -a re a s ilic o n d e te cto rs m ade of fu ll size of 4 " w afers. |
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PB-162 100ftm D-8036 | |
4C2E
Abstract: 2401-31-G 2403-01-g 5A4D 4c3f 2405-04-G "5ESS" 2402-41-G
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OSC1609AContextual Info: Model OSC1609A Cosmic - Technical Data Features: • Stable frequency over temperature • Good SSBN Noise performance • Surface mountable package • Description and Applications: Surface mount 3.2 x 5 mm Voltage Control Temperature Compensated Crystal |
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OSC1609A 10kHz -140dBc/Hz OSC1609A | |
Contextual Info: CMM5114A HARRIS S E M IC O N D U C T O R Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4 Bit LSI Static RAM December 1992 Features Pinout • Radiation Hardened to 100KRAD SI IS P M CERAM IC DIP C A S E OUTLINE D6, CONFIGURATION 3 TOP VIEW • Cosmic Ray Upeet Immunity 2 x 10r Errors/Bit Day (TYP) |
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CMM5114A 100KRAD | |
MICROCONTROLLER TRAININGContextual Info: GENERAL PURPOSE ST7 TRAINING TRAINING ST7 MICROCONTROLLER 5 - ST7 SOFTWARE TOOLS 5.1 - STMicroelectronics ASSEMBLY TOOL CHAIN 5.2 - HIWARE C TOOL CHAIN 5.3 - COSMIC C TOOL CHAIN General Purpose ST7 Microcontroller Training - ST7 SOFTWARE TOOLS - Cosmic C Tool Chain |
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32-bit MICROCONTROLLER TRAINING | |
A125
Abstract: B125 C125 D125 10H4503
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10H4503 5SYA1163-01 CH-5600 A125 B125 C125 D125 10H4503 | |
A140
Abstract: B140 C140 VF140 VF25
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10H4520 5SYA1170-00 CH-5600 A140 B140 C140 VF140 VF25 | |
traffic light controller
Abstract: 68HC908JK1 programmer schematic HC08 c code example MON08 schematic 68HC08JK1 HC08 MC68HC908JK1 MON08
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68HC08 68HC08JK1 MC68HC908JK1 MON08 traffic light controller 68HC908JK1 programmer schematic HC08 c code example MON08 schematic HC08 | |
Contextual Info: SPECTRUM CONTROL INC. Multilayer Discoidal Capacitor Application Guidelines Sources of EMI Electromagnetic interference occurs naturally from terres trial sources such as lightning discharges, precipitation, and sand and dust storms, in addition to cosmic noise |
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st visual prog
Abstract: 72xx
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AN1325
Abstract: AN983 ST7261 ST7262 ST7263
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AN1325 ST7261, ST7262 ST7263) AN1325 AN983 ST7261 ST7263 | |
A140
Abstract: B140 C140 VF140 VF25 5SDF kn 18
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10H4520 5SYA1170-00 CH-5600 A140 B140 C140 VF140 VF25 5SDF kn 18 | |
5SDF28L4520
Abstract: 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520
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28L4520 5SYA1185-01 CH-5600 5SDF28L4520 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520 | |
18516
Abstract: cathode ray et1200 Scans-0017319
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1S51S 18516 cathode ray et1200 Scans-0017319 | |
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 5500 175 3 3.35 7.2 3300 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA1118-02 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating |
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02D6004 5SYA1118-02 CH-5600 | |
Contextual Info: ACTS04MS fil H A R R IS S E M I C O N D U C T O R Radiation Hardened Hex Inverter December 1992 Features Pinouts • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose Up To 1 Mega-RAD Si - Dose Rate Upset >1011 RAD(Si)/s 20ns Pulse- Cosmic Ray Upset Immunity (Typ. < 1 x 10'11 Errors/ |
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ACTS04MS ACTS04MS 2240mm 10sA/cm2 110nm | |
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1170 20 1.75 0.75 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4503 PRELIMINARY Doc. No. 5SYA1163-00 Jan. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating |
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10H4503 5SYA1163-00 CH-5600 | |
Abb diode 6000 AContextual Info: 5SDF 11H4505 5SDF 11H4505 Old part no. DC 889-1100-45 Fast Recovery Diode Properties • Optimized soft recovery characteristics • Enhanced Safe Operating Area Industry standard housing Cosmic radiation withstand rating Applications |
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11H4505 1768/138a, DC/249/07d Feb-12 11H4505 Abb diode 6000 A | |
usb a smd
Abstract: ST7FLITE29
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ST7FLITE29 usb a smd ST7FLITE29 |