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    MT3S111TU

    Abstract: No abstract text available
    Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05


    Original     		PDF MT3S111TU MT3S111TU

    MT3S113

    Abstract: transistor 2F to-236 4360A
    Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113 O-236 SC-59 MT3S113 transistor 2F to-236 4360A

    Untitled

    Abstract: No abstract text available
    Text: MT3S111P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=0.95 dB 標準 (@ f=1 GHz) •


    Original     		PDF MT3S111P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.95 dB typ. (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)


    Original     		PDF MT3S111P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113 O-236 SC-59

    mt3s113p

    Abstract: No abstract text available
    Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113P SC-62 mt3s113p

    Untitled

    Abstract: No abstract text available
    Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB typ. (@ f=1GHz) • High Gain:|S21e| = 10.5dB (typ.) (@ f=1GHz)


    Original     		PDF MT3S113P SC-62

    25c1815

    Abstract: TGC1411 TGC1411-EPU DOUBLE FET
    Text: Advance Product Information 0.3 - 10 GHz Downconverter TGC1411-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 0.3-10 GHz RF/LO Frequency Range 0.15-2.5 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 26 mA


    Original     		PDF TGC1411-EPU TGC1411-EPU TGA1411 0007-inch 25c1815 TGC1411 DOUBLE FET

    Untitled

    Abstract: No abstract text available
    Text: MT3S113 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113 ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=11.8dB(標準) (@ f=1GHz)


    Original     		PDF MT3S113 O-236

    Untitled

    Abstract: No abstract text available
    Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12 dB (typ.) (@ f=1 GHz) 2 Marking


    Original     		PDF MT3S111 O-236 SC-59

    MT3S113TU

    Abstract: No abstract text available
    Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)


    Original     		PDF MT3S113TU MT3S113TU

    mmic core chip

    Abstract: TGC1452-EPU 10GHz mixer
    Text: Advance Product Information January 3, 2001 0.2 - 18 GHz Downconverter TGC1452-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 0.2-18 GHz RF/LO Frequency Range DC-4 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 17-24 mA


    Original     		PDF TGC1452-EPU TGC1452-EPU 501MHz, TGC1452 0007-inch mmic core chip 10GHz mixer

    Untitled

    Abstract: No abstract text available
    Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking


    Original     		PDF MT3S111 O-236 SC-59

    Untitled

    Abstract: No abstract text available
    Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113P SC-62

    Untitled

    Abstract: No abstract text available
    Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 576.0MHz Part No: MP04545 Model: TA1355A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device ESD 1. Input Power Level: 10dBm


    Original     		PDF MP04545 TA1355A 10dBm 588MHz) TA1355A

    Frequency Generator 500MHz

    Abstract: LT5522
    Text: DC651A DEMO BOARD QUICK START GUIDE Description: The DC651A demo circuit board is intended to demonstrate the capabilities of the LT5522 highsignal-level downconverting mixer IC for cable and CATV infrastructure applications. The LT5522 Figure 1 is a broadband high signal level active mixer optimized for high linearity


    Original     		PDF DC651A LT5522 LT5522 50ohm-matched 50ohms -12dBm 1150MHz, 1151MHz. Frequency Generator 500MHz

    vga splitter amplifier schematic

    Abstract: schematic for vga splitter vga splitter schematic VGA Splitter block diagram transistor J1x AD8348-EVAL gilbert cell differential pair operational amplifier discrete schematic vga input schematic AD8348
    Text: PRELIMINARY TECHNICAL DATA a 50–1000 MHz Quadrature Demodulator Preliminary Technical Data AD8348 Features Integrated I/Q demodulator with IF VGA Amplifier Operating IF Frequency 50–1000 MHz 3dB IF BW of 500MHz driven from Rs=200ohms Demodulation Bandwidth 60MHz


    Original     		PDF AD8348 500MHz 200ohms) 60MHz 450MHz) 500MHz) 28-pin 28-Lead vga splitter amplifier schematic schematic for vga splitter vga splitter schematic VGA Splitter block diagram transistor J1x AD8348-EVAL gilbert cell differential pair operational amplifier discrete schematic vga input schematic AD8348

    Untitled

    Abstract: No abstract text available
    Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.1. Base 2.2. Emitter 3.3. Collector R7 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)


    Original     		PDF MT3S113TU

    PSA2701T

    Abstract: Twin 3.5mm mono jack plugs fm radio 3.5mm jack circuit diagram of bluetooth fm transmitter battery operated speaker diagram for mp3 audio am bluetooth advantages and disadvantages weigh scale calibration program circuit diagram of bluetooth headphone labview audio spectrum analyser Thurlby
    Text: THURLBY THANDAR INSTRUMENTS PSA-T Series PSA1301T & PSA2701T Portable 1.3GHz and 2.7GHz RF Spectrum Analyzers Big on performance Small on size and cost PSA-T series RF Spectrum Analyzers Big on performance Small on size and cost The PSA-T series is an entirely new type of instrument.


    Original     		PDF PSA1301T PSA2701T PSA1301T PSA2701T Twin 3.5mm mono jack plugs fm radio 3.5mm jack circuit diagram of bluetooth fm transmitter battery operated speaker diagram for mp3 audio am bluetooth advantages and disadvantages weigh scale calibration program circuit diagram of bluetooth headphone labview audio spectrum analyser Thurlby

    mt3s111

    Abstract: No abstract text available
    Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking


    Original     		PDF MT3S111 O-236 SC-59 mt3s111

    Untitled

    Abstract: No abstract text available
    Text: MT3S113P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=10.5dB(標準) (@ f=1GHz)


    Original     		PDF MT3S113P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S111TU 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S111TU ○ VHF～UHF 帯 低雑音・低歪み増幅用 単位: mm 2.1±0.1 3 1 2. エミッタ 3. コレクタ UFM JEDEC JEITA 東芝 2-2U1B 質量: 6.6 mg 標準


    Original     		PDF MT3S111TU

    SD306DE

    Abstract: SD306 SD304DE SD306CHP To206AF SD30 SD304 Topaz Semiconductor Topaz Semiconductor sd304
    Text: TOPAZ SEMICONDUCTOR OSE D | "lOÖSaat, ÜO O l O a i 'ÏÏ’tMmmæ fl I SD304, SD306 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE DUAL ATE D-MOS FET ORDERING INFORMATION Sorted Chips in Waffle Pack TO-206AF TO-72 Package Shorting Rings SD304CHP SD304DE SD304DE/R


    OCR Scan     		PDF T-31-25 sd304chp sd306chp O-206AF sd304de sd306de sd304de/r sd306de/r SD306) 500MHz SD306DE SD306 SD306CHP To206AF SD30 SD304 Topaz Semiconductor Topaz Semiconductor sd304

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK882 FM TUNER, VHF RF AM PLIFIER APPLICATIONS. U n it in mm 2.1 ± 0.1 • Low Reverse Transfer Capacitance : C rss = 0.025pF Typ. • Low Noise Fig u re : N F = 1.7dB (Typ.) •


    OCR Scan     		PDF 2SK882 025pF 501MHz