506AN Search Results

SC-70-6 package

Abstract: ladder network thermal 506AN 2x2 dfn c 1383 QFN 10 2x2 footprint 6pin 2x2 dfn J1F3 QFN PACKAGE Junction to PCB thermal resistance
Contextual Info: AND8345/D WDFN6 2x2 mCoolt 506AN Dual MOSFET Package Board Level Application Notes and Thermal Performance http://onsemi.com Prepared by: Anthony M. Volpe ON Semiconductor APPLICATION NOTE Introduction Figure 3 depicts a minimum recommended pad pattern that confines an improved thermal area of drain connections

E2 liu

Abstract: wdfn6 506AN
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN−01 ISSUE E DATE 20 AUG 2010 SCALE 4:1 D PIN ONE REFERENCE 0.10 C 0.10 C PLATING ÍÍ ÍÍ ÍÍ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.

NTLJD3119CTAG

Abstract: NTLJD3119C NTLJD3119CTBG
Contextual Info: NTLJD3119C Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package

NIS1050MNTBG

Abstract: NIS1050 6x fet
Contextual Info: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power

Contextual Info: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package

Contextual Info: NTLJD3183CZ Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on in 2x2 mm Package Footprint Same as SC−88 Package

NTLJF3118N

Abstract: NTLJF3118NTAG NTLJF3118NTBG
Contextual Info: NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features •ăWDFN 2x2 mm Package Provides Exposed Drain Pad for V BR DSS Excellent Thermal Conduction

g3je

Abstract: marking JE 6 pin D15G2 NTLJD3181PZTAG NTLJD3181PZTBG
Contextual Info: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package

NTLJD3115P

Abstract: NTLJD3115PT1G NTLJD3115PTAG
Contextual Info: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package

Contextual Info: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent

JH MARKING CODE SCHOTTKY DIODE

Contextual Info: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent

Contextual Info: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package

Contextual Info: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power

Contextual Info: NTLJD4150P Power MOSFET −30 V, −3.4 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features http://onsemi.com • WDFN 2x2 mm Package Provides Exposed Drain Pad for • • • • Excellent Thermal Conduction Footprint Same as SC−88 Package Low Profile < 0.8 mm for Easy Fit in Thin Environments

Contextual Info: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction

NTLJD3115PT1G

Abstract: tl 72 oz NTLJD3115P NTLJD3115PTAG 6X MOSFET
Contextual Info: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package

6X MOSFET

Abstract: NCP304 NUS1204MN
Contextual Info: NUS1204MN Product Preview Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to

Contextual Info: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction

NIS1050

Abstract: NIS1050MNTBG FET MARKING
Contextual Info: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power

NTLJF3117PTAG

Abstract: NTLJF3117P NTLJF3117PT1G high current schottky diode
Contextual Info: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent

Contextual Info: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package

Contextual Info: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction

Contextual Info: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package

Contextual Info: NVLJD4007NZ Small Signal MOSFET 30 V, 245 mA, Dual, N−Channel, Gate ESD Protection, 2x2 WDFN Package http://onsemi.com Features • • • • • • Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small 2 x 2 mm Footprint