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    506AP Search Results

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    506AP Price and Stock

    Micro Commercial Components SR506-AP

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    DigiKey SR506-AP Bulk 12,000
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    Micro Commercial Components FR506-AP

    DIODE GEN PURP 800V 5A DO201AD
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    DigiKey FR506-AP Ammo Pack
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    Texas Instruments MPC506AP

    IC MUX 16:1 1.5KOHM 28DIP
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    Rochester Electronics MPC506AP 24,033 1
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    Microchip Technology Inc T5750-6AP

    RF TX IC ASK 868-928MHZ 8TSSOP
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    DigiKey T5750-6AP Reel 500
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    Texas Instruments MPC506APG4

    IC MUX 16:1 1.5KOHM 28DIP
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    506AP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet rqa 130

    Abstract: 6pin 2x2 dfn 506AP 2x2 dfn wdfn6 ladder network thermal
    Text: AND8380/D WDFN6 2x2 mCool] 506AP Single MOSFET Package Board Level Application Notes and Thermal Performance http://onsemi.com APPLICATION NOTE Prepared by: Anthony M. Volpe ON Semiconductor Introduction the contact area of the exposed source to include Pin 4


    Original     		PDF AND8380/D 506AP 506AP mosfet rqa 130 6pin 2x2 dfn 2x2 dfn wdfn6 ladder network thermal

    506AP

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP−01 ISSUE B DATE 26 APR 2006 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM


    Original     		PDF 506AP-01 506AP 506AP

    506AP

    Abstract: NTLJS3113P NTLJS3113PT1G
    Text: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS on Solution in 2x2 mm Package


    Original     		PDF NTLJS3113P SC-88 NTLJS3113P/D 506AP NTLJS3113P NTLJS3113PT1G

    506AP

    Abstract: tl 72 oz NTLJS1102PTAG NTLJS1102PTBG
    Text: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate


    Original     		PDF NTLJS1102P SC-88 NTLJS1102P/D 506AP tl 72 oz NTLJS1102PTAG NTLJS1102PTBG

    506AP

    Abstract: NTLJS4149PTAG NTLJS4149PTBG
    Text: NTLJS4149P Power MOSFET -30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package with Exposed Drain Pad for Excellent Thermal http://onsemi.com Conduction •ă2x2 mm Footprint Same as SC-88 Package •ăLow Profile < 0.8 mm for Easy Fit in Thin Environments


    Original     		PDF NTLJS4149P SC-88 NTLJS4149P/D 506AP NTLJS4149PTAG NTLJS4149PTBG

    Untitled

    Abstract: No abstract text available
    Text: NSS40200UW6T1G, NSV40200UW6T1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS40200UW6T1G, NSV40200UW6T1G NSS40200UW6/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package


    Original     		PDF NTLJS4114N SC-88 NTLJS4114N/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS4114N Product Preview Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features http://onsemi.com • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction • 2x2 mm Footprint Same as SC−88 • Lowest RDS on in 2x2 mm Package


    Original     		PDF NTLJS4114N SC-88 NTLJS4114N/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS2103P Power MOSFET -12 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction •ă2x2 mm Footprint Same as SC-88 Package •ăLow Profile < 0.8 mm for Easy Fit in Thin Environments


    Original     		PDF NTLJS2103P SC-88 NTLJS2103P/D

    506AP

    Abstract: NTLJS2103PTAG NTLJS2103PTBG
    Text: NTLJS2103P Power MOSFET −12 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS on Solution in 2x2 mm Package


    Original     		PDF NTLJS2103P SC-88 NTLJS2103P/D 506AP NTLJS2103PTAG NTLJS2103PTBG

    506AP

    Abstract: NTLJS4159N NTLJS4159NT1G
    Text: NTLJS4159N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package


    Original     		PDF NTLJS4159N SC-88 NTLJS4159N/D 506AP NTLJS4159N NTLJS4159NT1G

    Untitled

    Abstract: No abstract text available
    Text: NTLJS2103P Power MOSFET -12 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction •ă2x2 mm Footprint Same as SC-88 Package •ăLowest RDS on Solution in 2x2 mm Package


    Original     		PDF NTLJS2103P SC-88 NTLJS2103P/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS4149P Power MOSFET -30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package with Exposed Drain Pad for Excellent Thermal http://onsemi.com Conduction •ă2x2 mm Footprint Same as SC-88 Package •ăLow Profile < 0.8 mm for Easy Fit in Thin Environments


    Original     		PDF NTLJS4149P SC-88 NTLJS4149P/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package


    Original     		PDF NTLJS3113P NTLUS3A40P SC-88 NTLJS3113P/D

    506AP

    Abstract: NTLJS4114N NTLJS4114NT1G
    Text: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package


    Original     		PDF NTLJS4114N SC-88 NTLJS4114N/D 506AP NTLJS4114N NTLJS4114NT1G

    Untitled

    Abstract: No abstract text available
    Text: NTLJS4159N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package


    Original     		PDF NTLJS4159N NTLJS4159N/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package


    Original     		PDF NTLJS3113P NTLUS3A40P NTLJS3113P/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package


    Original     		PDF NTLJS4114N SC-88 NTLJS4114N/D

    506AP

    Abstract: NSS40200UW6T1G
    Text: NSS40200UW6T1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS40200UW6T1G NSS40200UW6/D 506AP NSS40200UW6T1G

    Untitled

    Abstract: No abstract text available
    Text: NTLJS1102P Advance Information Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features http://onsemi.com • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package


    Original     		PDF NTLJS1102P SC-88 NTLJS1102P/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate


    Original     		PDF NTLJS1102P NTLJS1102P/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package


    Original     		PDF NTLJS4114N NTLJS4114N/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS2103P Power MOSFET −12 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package


    Original     		PDF NTLJS2103P NTLUS3A40P NTLJS2103P/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJS2103P Power MOSFET −12 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package


    Original     		PDF NTLJS2103P NTLUS3A40P SC-88 NTLJS2103P/D