50MMX Search Results
50MMX Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LMP91050MMX/NOPB |
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Configurable AFE for Nondispersive Infrared (NDIR) Sensing Applications 10-VSSOP -40 to 105 |
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LMH6550MMX/NOPB |
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400MHz, Differential, High Speed Op Amps 8-VSSOP -40 to 85 |
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50MMX Price and Stock
3M Interconnect 5113SFT-50-50MMX30MRF EMI SHLD TAPE 98.425'X1.969" |
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5113SFT-50-50MMX30M | Bulk | 6 | 1 |
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3M Interconnect GPT-020F-50MMX50MTAPE DBL COATED/SIDED 1.97"X55YD |
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GPT-020F-50MMX50M | Bulk | 5 | 1 |
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Texas Instruments LM4850MMXIC AMP CLSS AB MONO 1.9W 10VSSOP |
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LM4850MMX | Reel |
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Texas Instruments LMH6550MMXIC OPAMP VFB 1 CIRCUIT 8VSSOP |
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LMH6550MMX | Reel | 3,500 |
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LMH6550MMX | 1,082 |
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3M Interconnect 8958-50MMX50MTAPE MASKING 1.97"X54.7YDS |
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8958-50MMX50M | Bulk | 18 |
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50MMX Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SMLK1 / SMLK2 series PSML2 Data Sheet lFeatures lOutline • High heat radiation "PSML2" series • Low package by flat frame structure • High Luminous Intensity lSize 1006 0402 4520 (1808) 4.5x2.0mm (t=0.6mm) 1.0×0.6mm (t=0.2mm) Color Type WB lDimensions |
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SMLK18WBJBW SMLK18WBJDW R1102A | |
SOD JEDECContextual Info: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter |
OCR Scan |
BAS85 50mmx50mmx1 01-Apr-99 BAS85_ -April-99 SOD JEDEC | |
Contextual Info: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C |
OCR Scan |
BAS86 50mmx50mmx1 01-Apr-99 | |
Contextual Info: T em ic TZMC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization |
OCR Scan |
50mmx50mmx 200mA 24-Jun-96 | |
Contextual Info: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications |
OCR Scan |
TZM5221 TZM5267B 1N5221 N5267B 50mmx50mmx1 01-Apr-99 | |
Contextual Info: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage |
OCR Scan |
LL4151_ 1N4151 50mmx50mmx1 01-Apr-99 | |
Contextual Info: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current |
OCR Scan |
LL4154 1N4154 50mmx50mmx 24-Jun-96 24-Iun-96 | |
BA979Contextual Info: BA979.BA979S VISHAV Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current |
OCR Scan |
BA979 BA979S 50mmx50mmx1 01-Apr-99 | |
1009CContextual Info: BA679.BA679S Vishay Telefun ken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature |
OCR Scan |
BA679 BA679S 50mmx50mmx1 1009c 01-Apr-99 1009C | |
Ip200mA
Abstract: 600L100
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OCR Scan |
--300K/W 50mmx50mmxl 24-Jun-96 Ip200mA 600L100 | |
Contextual Info: TZMB._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • y Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • Vz-tolerance ± 2% |
OCR Scan |
50mmx50mmx1 01-Apr-99 | |
A2 12 zener diode
Abstract: diode ZENER A2 6 A2 9 zener diode
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BZX55B2V4-BZX55B75 500mW, DO-35 OD-27) C/10s A2 12 zener diode diode ZENER A2 6 A2 9 zener diode | |
Contextual Info: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings |
OCR Scan |
TZS4678. TZS4717 300K/W 50mmx50mmx1 100mA Number85613 -Apr-99 01-Apr-99 | |
Contextual Info: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage |
OCR Scan |
LS4151_ 1N4151 01-Apr-99 | |
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Contextual Info: Tem ic BA982.BA983 Semiconductors Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance • Quadra M elf package Applications Band switching in VH F-tuners Absolute Maximum Ratings Tj = 25 °C |
OCR Scan |
BA982 BA983 50mmx50mmx 24-Jun-96 BA983 | |
Contextual Info: LL4150_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings |
OCR Scan |
LL4150_ 01-Apr LL4150 01-Apr-99 | |
Telefunken u 439Contextual Info: T e m ic t z m b . S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • V/-tolerance ± 2% |
OCR Scan |
300K/W 50mmx50mmxl D-74025 24-Jun-96 Telefunken u 439 | |
DO 213Contextual Info: Tem ic BA682.BA683 S e m i c o n d u c t o r s Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj = 25 °C Parameter |
OCR Scan |
BA682 BA683 50mmx50mmx 24-Jun-96 100mA 100MHz, 200MHz, DO 213 | |
Contextual Info: Small-sized Class-D Speaker Amplifiers Analog Input Monaural Class-D Speaker Amplifier No.10101EAT07 BD5467GUL ●Description BD5467GUL is a monaural Class-D speaker amplifier that contained ALC function for mobile phone, portable type electronic devices etc. LC filter of speaker output is not needed, can form monaural speaker amplifier with 3 external parts. |
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10101EAT07 BD5467GUL BD5467GUL 262ms/1dB R1010A | |
BU2152FS
Abstract: BD7851FP BU2050F BU2092F BU2092FV BU2099FV HSOP25 SSOP-A32 SSOP-B20
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BU2050F BU2092F BU2092FV BU2099FV BD7851FP BU2152FS 09051EAT03 BU2152FS HSOP25 SSOP-A32 SSOP-B20 | |
radioactivityContextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT NAME Over Voltage Protection Controller with Internal FET MODEL NAME BD6044GUL BLOCK DIAGRAM See Figure 1 PACKAGE DIMENSIONS See Figure 2 FEATURES ●Overvoltage Protection up to 36V ●Internal Low Ron 125m FET |
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BD6044GUL VCSP50L1 R0039A radioactivity | |
58LT00F
Abstract: TA58LT00F
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TA58LT00F TA58LT00F 58LT00F 2002/95/EC) 58LT00F | |
LQM21PN2R2MC0
Abstract: LQM21PN2R2 BD9180GUL
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BD9180GUL 09027EAT28 BD9180GUL R0039A LQM21PN2R2MC0 LQM21PN2R2 | |
capacitor AA8
Abstract: 27.0000MHZ KXO-01-1Z-36.0000MHZ
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BU7346GUL 0000MHz 0000MHz R0039A capacitor AA8 27.0000MHZ KXO-01-1Z-36.0000MHZ |