50N06 Search Results

50N60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max

mosfet 50a 25v to 252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 TO-263  DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max

50N06 to 252

Abstract: MOSFET 50N06 50n06l 50N06 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max

50n06

Abstract: MOSFET 50N06 50N06 to 252
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max

50n06

Abstract: MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max

55NF06

Abstract: P55NF06 P55nf*06 Mosfet P55NF06
Contextual Info: 55NF06 Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max

a50n06

Abstract: 50n06 MOSFET 50N06 50N06LT Equivalent 50N06 50N06 DATASHEET 50N06L power MOSFET 50n06 50N06-TF3-T p 50n06
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max

50N06

Abstract: MOSFET 50N06 50N06 DATASHEET 50N06 E 50N06 E DATASHEET
Contextual Info: E 50N06 HEXFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements Power MOSFET VDSS = 60V ID25 = 50A RDS ON = 0.022Ω Description Third Generation HEXFETs from International Rectifier provide the designer

Equivalent 50N06

Abstract: MOSFET 50N06 50n06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max

Equivalent 50N06

Abstract: MOSFET 50N06 po345 50N06 rfp50n06 equivalent 50N06 DATASHEET AN9664 HIP6002 HIP6003 RFP70N03
Contextual Info: A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller Application Note December 1996 AN9664 Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the Intel Pentium Pro, present many challenges to their power

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

50N06LE

Contextual Info: J W S S em icon du cto r 50N06LE, 50N06LE, 50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

fp50n06

Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Contextual Info: 50N06LE, 50N06LE, 50N06LE, 50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω

50n06

Contextual Info: OM60N06SA OM60N05SA 50N06ST 50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages

50N05

Abstract: 60N05 TO-254AA OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA OM60N06SA TO254-AA
Contextual Info: OM60N06SA OM60N05SA 50N06ST 50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages

Equivalent 50N06

Abstract: MOSFET 50N06 50N06 50n06 similar schematic diagram converter 12v to 24v 70N03 AN9664 HIP6002 HIP6003 MBR1535CT
Contextual Info: A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller Application Note December 1996 AN9664 Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the Intel Pentium Pro, present many challenges to their power

fp50n06

Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Contextual Info: 50N06LE, 50N06LE, 50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

fp50n06

Abstract: 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Contextual Info: 50N06LE, 50N06LE, 50N06LESM Data Sheet Title FG5 06L P50 6LE 1S5 06L M bt A, V, 22 m, gic vel anwer OSTs) utho October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

fp50n06

Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
Contextual Info: U A D D ic 50N06LE. 50N06LE, 50N06LE, 50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE

optimos battery protection reverse

Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
Contextual Info: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the

TLE7201

Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
Contextual Info: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do

50n05

Abstract: SMP50N05 SMP60N05 s0n06 smp60n06 60n05 SMP50N06 60N06 50n06 siliconix SMP50N06-18
Contextual Info: lêE I SILICONIX INC <MmW C rS • 8254735 0014173 7 ■ SMP60N06/05, 50N06/05 ilì c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BRJDSS SMP60N06 60 0.023 60 SMP60N05 50 0.023 60 50N06

50N05

Abstract: OM60N06SA OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA
Contextual Info: OM60N06SA OM60N05SA 50N06ST 50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages