50V 1A PNP POWER TRANSISTOR Search Results

marking 12W SOT23

Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEV > -50V, V(BR)CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

ZXTP2025

Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

Contextual Info: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current   ICM up to -5A Peak Pulse Current    2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A

Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

2SCR533P

Contextual Info: 2SCR533P Data Sheet NPN 3.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 3.0A MPT3 Base Collector Emitter 2SCR533P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR533P 3) Low VCE(sat) VCE(sat)=0.35V Max. (IC/IB=1A/50mA)

2SAR513P

Abstract: T100
Contextual Info: Midium Power Transistors -50V / -1A 2SAR513P  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) 2) High speed switching

2SAR533P

Abstract: T100
Contextual Info: Midium Power Transistors -50V / -3A 2SAR533P  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) 2) High speed switching  Applications

Contextual Info: Midium Power Transistors -50V / -1A 2SAR513P  Dimensions (Unit : mm)  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) (2) (3) 2) High speed switching

Contextual Info: Midium Power Transistors -50V / -3A 2SAR533P  Dimensions (Unit : mm)  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) (2) (3) 2) High speed switching

Contextual Info: Midium Power Transistors -50V / -3A MP6T13  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features 1) Low saturation voltage V CE (sat) = -0.4V (Max.) (I C / I B= -1A / -50mA) 2) High speed switching (1) Tr.1

MPT6

Contextual Info: Midium Power Transistors -50V / -1A MP6T12  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6  Features 1) Low saturation voltage, typically V CE (sat) = -0.4V (Max.) (I C / I B= -500mA / -25mA) (6) (5) (4) (1) (2) (3)

MMBT589

Contextual Info: MMBT589 -1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High current surface mount PNP silicon switching transistor for Load management in portable applications

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

2N4235

Abstract: 2N4238 2N4234 2N4237
Contextual Info: 2N4234 2N4235 • 2N4237 ■ 2N 4238 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES H ' ' 1 ^ % ' ' ’« • • $ * » " , . yav 5&. THE 2N42J4» 2N4235 PNP AND 2N4237, 2N4238 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE

IC2A

Abstract: 2SB1392
Contextual Info: SavantIC Semiconductor Product Specification 2SB1392 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

50V 1A PNP power transistor

Abstract: 2SA743 2SC1212
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA743 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -50V (Min) ·Complement to Type 2SC1212 APPLICATIONS ·Designed for use in low frequency power amplifier

2SC2331

Abstract: 2SA1008
Contextual Info: Inchange Semiconductor Product Specification 2SA1008 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2331 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters

2SA1008

Abstract: 2SC2331
Contextual Info: JMnic Product Specification 2SA1008 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2331 ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・DC/DC converters ・High frequency power amplifiers

2SB1392

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1392 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications.

Contextual Info: DUAL PNP SWITCHING TRANSISTORS 2N3251DCSM • Dual Silicon Planer PNP Transistors • Hermetic Ceramic Surface Mount Package • Designed For Small Signal, General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS Each Side, TA = 25°C unless otherwise stated

2SD844

Abstract: 2SB754 2SB754 equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max) @IC= -4A

2SB954

Abstract: 2SB954A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB954 2SB954A DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage APPLICATIONS ·For power amplification

2SB954

Abstract: 2SB954A
Contextual Info: JMnic Product Specification 2SB954 2SB954A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage APPLICATIONS ・For power amplification