511001B Search Results

Contextual Info: O K I semiconductor 511001B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 511001B is a new generation dynam ic RAM organized as 1,048,576 w ords x 1 bit. The technology used to fabricate the 511001B is OKI's CM OS silicon gate process technology. The

Contextual Info: O K I Semiconductor 511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The 511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the 511001B is OKI's CMOS silicon gate process technology. The

18-PIN

Abstract: 26-PIN ZIP20-P-400 MSM OKI
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The 511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the 511001B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I semiconductor 511001B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The 511001B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the 511001B is OKI's CMOS silicon gate process technology. The

TC51001

Abstract: tc511001bft
Contextual Info: 1,048,576 W ORD x PRELIMINARY 1 BIT DYN AM IC RAM DESCRIPTION The TC 51100IB P/B J/B Z/B FT is the new gen eratio n dynam ic RAM organized 1,048,576 words by 1 bit. The 511001BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology as w ell as