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    51161 Search Results

    51161 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    88951-161LF Amphenol Communications Solutions Metral® Board Connectors, Backplane Connectors, 4 Row Signal Header, Straight, Solder-to-Board, Wide body. Visit Amphenol Communications Solutions
    131-5116-11H Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 5-Pair, 6 Column, Open Wall, Backplane Module, 1.5mm Wipe, APP. Visit Amphenol Communications Solutions
    88951-161PLF Amphenol Communications Solutions 4 Row Signal Header,24 position Straight, Solder-to-Board, Wide body Visit Amphenol Communications Solutions
    131-5116-11D Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 5-Pair, 6 Column, Open Wall, Backplane Module, 1.5mm Wipe, Nickel Sulfamate. Visit Amphenol Communications Solutions
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    51161 Price and Stock

    Amphenol Communications Solutions 10152265-1161HF

    MINITEK127 1.27MM, VERTICAL HEAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 10152265-1161HF Cut Tape 8,626 1
    • 1 $1.13
    • 10 $0.864
    • 100 $1.13
    • 1000 $0.5557
    • 10000 $0.5557
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    10152265-1161HF Digi-Reel 8,626 1
    • 1 $1.13
    • 10 $0.864
    • 100 $1.13
    • 1000 $0.5557
    • 10000 $0.5557
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    10152265-1161HF Reel 8,000 1,000
    • 1 -
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    • 100 -
    • 1000 $0.51639
    • 10000 $0.41044
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    Newark 10152265-1161HF Reel 3,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.575
    • 10000 $0.575
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    Nihon Dempa Kogyo Co Ltd CS05116-16M

    CRYSTAL 16.0000MHZ 12PF SMD
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    DigiKey CS05116-16M Cut Tape 7,710 1
    • 1 $1.02
    • 10 $0.883
    • 100 $0.7617
    • 1000 $0.70876
    • 10000 $0.70876
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    CS05116-16M Digi-Reel 7,710 1
    • 1 $1.02
    • 10 $0.883
    • 100 $0.7617
    • 1000 $0.70876
    • 10000 $0.70876
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    CS05116-16M Reel 3,000 3,000
    • 1 -
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    • 10000 $0.70875
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    Molex 2155116121

    6.0MM 2 CKT PNL MNT RECEPT
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    DigiKey 2155116121 Bag 474 1
    • 1 $1.86
    • 10 $1.401
    • 100 $1.10778
    • 1000 $0.99915
    • 10000 $0.99915
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    TTI 2155116121 Each 540 4
    • 1 -
    • 10 $1.17
    • 100 $1.1
    • 1000 $1.04
    • 10000 $1.04
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    Avnet Abacus 2155116121 21 Weeks 1,080
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    WAGO Innovative Connections 285-1161

    2-CONDUCTOR THROUGH TERMINAL BLO
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    DigiKey 285-1161 Box 10 1
    • 1 $53.36
    • 10 $53.36
    • 100 $47.6468
    • 1000 $47.6468
    • 10000 $47.6468
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    AirBorn Inc MM-312-051-161-41WD

    CABLE ASSY D-MIC-D 51P 914.4MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MM-312-051-161-41WD Bulk 7 1
    • 1 $648.26
    • 10 $515.733
    • 100 $515.733
    • 1000 $515.733
    • 10000 $515.733
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    Powell Electronics MM-312-051-161-41WD 6 1
    • 1 $647.61
    • 10 $489.46
    • 100 $489.46
    • 1000 $489.46
    • 10000 $489.46
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    51161 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    51161-2-4037 ebm-papst Fans, Thermal Management - Fans - Accessories - WALL RING 154MM "V" FOR M4Q SER Original PDF
    5116134 Herz HEATER TYPE PH92, 3X400-440-480V Original PDF
    5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    51161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E LIC PRELIMINARY INFORMATION 51161024 6 4 K x 16 STATIC RAM Features Description • ■ ■ ■ ■ The V 61C 51161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are


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    PDF V61C51161024 44-pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )


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    PDF 16-Bit Y//77777/

    Untitled

    Abstract: No abstract text available
    Text: M OSEL V I T E L I C PRELIMINARY V 6 1 C 5 1 161024 6 4 K x 16 H IG H S P E E D S T A T IC R A M Features Description • ■ ■ ■ ■ ■ The V 61C 51161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are


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    PDF 576-bit 44-pin

    HY5116100B

    Abstract: 10k52 1AD41-00-MAY95 1AD41
    Text: -HYUNDAI 5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H 5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5116100B Y5116100B 5116100B 1AD41-00-MAY95 HY5116100BJ HY5116100BSLJ HY5116100BT HY5116100BSLT 10k52 1AD41-00-MAY95 1AD41

    Untitled

    Abstract: No abstract text available
    Text: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA 5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


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    PDF TC5116100BSJ-60/70 5116100BS 51161OOBSJ 300mil)

    Untitled

    Abstract: No abstract text available
    Text: b l E D • 4 ^ i , 2 0 3 H M 5116100 S e r i e s - 0 0 2 3 3 2 b O i l ■ H I T S HITACHI/ «-o ì i c / arrays / be * 16,777,216-w ord x 1 -b it D yn a m ic R andom A c c e s s M em ory The H itachi H M 5116100 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It


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    PDF 216-w HM5116100J-6 HM5116100J-7 HM5116100J-8 400-mil 24/28-pin CP-24DA) HM5116100Z-6 HM51161002-7 HM5116100Z-8

    Untitled

    Abstract: No abstract text available
    Text: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The 5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The 5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF 16-bit HY5116160 16-bit. HY5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC HY5116160TC

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 16 M X 1-Bit Dynamic RAM HYB 5116100AJ-50/-60/-70/-80 HYB 5116100ASJ-50/-60/-70/-80 Advanced Inform ation • 16 777 216 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version


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    PDF 5116100AJ-50/-60/-70/-80 5116100ASJ-50/-60/-70/-80 B235b05 00S53T7

    Untitled

    Abstract: No abstract text available
    Text: blE J> m 44Tb203 Ü023MSS aTO • HITE 5116101 Series — hitachi/ logic/arrays/mem 16,777,216-Word x 1-Bit Dynamic Random Access Memory The H itachi H M 5116101 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It employs the most advanced CMOS technology for


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    PDF 44Tb203 023MSS HM5116101 216-Word HM5I1610I HM5116101J-8 400-mil 24/28-pin CP-24DA)

    E34C

    Abstract: No abstract text available
    Text: b l E I> • 0 0 2 3 4 8 0 T5b « H I T 2 H M 5116102 S e r ie s Preliminary 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI/ LOGIC/ARRAYS/MEM The H M 5116102 is a CM OS dyn am ic RAM organized 16,777,216 words x 1-bit. It employs the most advanced CMOS technology for high


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    PDF HM5116102 216-word HM5116102J-8 400-mil 24/28-pin CP-24DA) TTP-24D) HM511 0Q23SDb E34C

    Untitled

    Abstract: No abstract text available
    Text: H M 5 1 1 6 1 0 0 L S e r i e s LowPower Version Product Preview 16,777,216-Word x 1-Bit Dynamic Random A c c e s s Memory • DESCRIPTION H M 5116100L J Series The Hitachi HM 5116100 is a C M O S dynamic RAM organized 16,777,216 words x 1-bit. It employs the most advanced C M O S technology lor high performance and


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    PDF 216-Word 5116100L HM5116100L

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K 5116160A H PD 4216160


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    PDF 51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288

    ns 415

    Abstract: No abstract text available
    Text: O K I Semiconductor 5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116170 is a 1,048,576-word x 16-bit dynam ic RA M fabricated in OKI's CM O S silicon gate technology. The M SM 5116170 achieves high integration, high-speed operation, and low -pow er


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    PDF MSM5116170 576-Word 16-Bit 42-pin ns 415

    5116 RAM

    Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
    Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)


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    PDF 16-Bit 5116165BSJ 5118165BSJ HYB3118165BSJ-50) HYB3118165BSJ-60) I/01-I/016 16-EDO 777777yà 5116 RAM bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time


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    PDF 16-Bit 5116165BSJ 5118165BSJ 5118165BSJ-50) 5118165BSJ-60) 5118165BSJ-7EDO E35hQ5 165BSJ-50/-60/-70 16-EDO

    Untitled

    Abstract: No abstract text available
    Text: 5116165A Series Preliminary 1,048,576-word x 16-btt Dynamic Random Access Memory Rev. 0.0 Jul. 20.1994 HITACHI T be H itachi HM 5116165A is a CMOS dynamic R A M organized 1,048.576 w ords x 16 bits. It employs the most advanced CMOS technology for h ig h p e rfo rm a n c e an d low p o w e r.


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    PDF HM5116165A 576-word 16-btt 116165A mW/495 mW/440 5116165AJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary H M 5 1 1 6 1 6 0 A / A L S e r ie s 1,048,576-word x 16-bit Dynamic Random Access Memory The H ita ch i H M 5116160A /A L is a CM O S dynamic RA M organized 1,048,576 words x 16 b its. It em ploys the most advanced CM O S technology for high performance and low power.


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    PDF 576-word 16-bit 116160A HM5116160A/AL mW/495 mW/440mW HMS116160A/AL

    HY5116100B

    Abstract: 1AD41-00-MAY95 HY5116100
    Text: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide


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    PDF HY5116100B 16Mx1 HY5116100Bis TheHY5116100B 4b750Ã 300435b 1AD41-00-MAY9S HY5116100BJ 1AD41-00-MAY95 HY5116100

    A9HA

    Abstract: SA11
    Text: O K I Semiconductor MSM5 1 16100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116100 is a new generation dynamic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the M SM 5116100 is OKI's CMOS silicon gate process technology.


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    PDF MSM5116100_ 216-Word MSM5116100 cycles/64ms b72M2MD MSM5116100 A0-A11 b724240 A9HA SA11

    Untitled

    Abstract: No abstract text available
    Text: 5116100 Series 16,777,216-word x 1-bit Dynamic RAM HITACHI ADE-203-646D Z Rev. 4.0 Jun. 24, 1997 Description The Hitachi HM 5116100 is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The 5116100 offers


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    PDF HM5116100 216-word ADE-203-646D 26-pin ns/70 mW/385

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC PRELIMINARY 51161024 6 4 K x 16 STATIC RAM Features Description • ■ ■ ■ ■ The V 61C 51161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with


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    PDF V61C51161024 576-bit 44-pin

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-178B Z 5116100A Series 16,777,216-word x 1-bit Dynamic Random Access Memory H IT A C H I Nov2r 99: The Hitachi H M 5116100A is a CMOS dynamic R A M o rg an ized 1 6 ,7 7 7 ,2 1 6 -w o rd x 1-bit. It employs the most advanced CMOS technology for


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    PDF ADE-203-178B HM5116100A 216-word 116100A 5116100AS-6 5116100AS-7 5116100AS-8 HM5116100ATS-6 5116100ATS-7

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M X 16-Bit Dynamic RAM 4k-Refresh HYB 5116160BSJ-50/-60/-70 A d v a n c e d In fo rm a tio n • 1 0 4 8 576 w o rd s by 16-bit o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re m ax. 550 a ctive m W (-50 ve rsio n )


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    PDF 16-Bit 5116160BSJ-50/-60/-70

    Untitled

    Abstract: No abstract text available
    Text: H M 5116100 S e r ie s - Preliminary 16,777,216-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION H M 5U 6100J Series T h e H itachi H M 5 1 16 10 0 is a C M O S dyn am ic R A M org an ized 16,777,216-w ord x 1-bit. It em ploys the m ost a d v a n ce d C M O S technolog y for high perform a n ce and


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    PDF HM5116100 216-Word 216-w 6100J