51161 Search Results

Contextual Info: M O S E L V IT E LIC PRELIMINARY INFORMATION 51161024 6 4 K x 16 STATIC RAM Features Description • ■ ■ ■ ■ The V 61C 51161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are

Contextual Info: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )

Contextual Info: M OSEL V I T E L I C PRELIMINARY V 6 1 C 5 1 161024 6 4 K x 16 H IG H S P E E D S T A T IC R A M Features Description • ■ ■ ■ ■ ■ The V 61C 51161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are

HY5116100B

Abstract: 10k52 1AD41-00-MAY95 1AD41
Contextual Info: -HYUNDAI 5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H 5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA 5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: b l E D • 4 ^ i , 2 0 3 H M 5116100 S e r i e s - 0 0 2 3 3 2 b O i l ■ H I T S HITACHI/ «-o ì i c / arrays / be * 16,777,216-w ord x 1 -b it D yn a m ic R andom A c c e s s M em ory The H itachi H M 5116100 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It

Contextual Info: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The 5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The 5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: SIEMENS 16 M X 1-Bit Dynamic RAM HYB 5116100AJ-50/-60/-70/-80 HYB 5116100ASJ-50/-60/-70/-80 Advanced Inform ation • 16 777 216 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version

Contextual Info: blE J> m 44Tb203 Ü023MSS aTO • HITE 5116101 Series — hitachi/ logic/arrays/mem 16,777,216-Word x 1-Bit Dynamic Random Access Memory The H itachi H M 5116101 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It employs the most advanced CMOS technology for

E34C

Contextual Info: b l E I> • 0 0 2 3 4 8 0 T5b « H I T 2 H M 5116102 S e r ie s Preliminary 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI/ LOGIC/ARRAYS/MEM The H M 5116102 is a CM OS dyn am ic RAM organized 16,777,216 words x 1-bit. It employs the most advanced CMOS technology for high

Contextual Info: H M 5 1 1 6 1 0 0 L S e r i e s LowPower Version Product Preview 16,777,216-Word x 1-Bit Dynamic Random A c c e s s Memory • DESCRIPTION H M 5116100L J Series The Hitachi HM 5116100 is a C M O S dynamic RAM organized 16,777,216 words x 1-bit. It employs the most advanced C M O S technology lor high performance and

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K 5116160A H PD 4216160

ns 415

Contextual Info: O K I Semiconductor 5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116170 is a 1,048,576-word x 16-bit dynam ic RA M fabricated in OKI's CM O S silicon gate technology. The M SM 5116170 achieves high integration, high-speed operation, and low -pow er

5116 RAM

Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Contextual Info: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)

Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time

Contextual Info: 5116165A Series Preliminary 1,048,576-word x 16-btt Dynamic Random Access Memory Rev. 0.0 Jul. 20.1994 HITACHI T be H itachi HM 5116165A is a CMOS dynamic R A M organized 1,048.576 w ords x 16 bits. It employs the most advanced CMOS technology for h ig h p e rfo rm a n c e an d low p o w e r.

Contextual Info: Preliminary H M 5 1 1 6 1 6 0 A / A L S e r ie s 1,048,576-word x 16-bit Dynamic Random Access Memory The H ita ch i H M 5116160A /A L is a CM O S dynamic RA M organized 1,048,576 words x 16 b its. It em ploys the most advanced CM O S technology for high performance and low power.

HY5116100B

Abstract: 1AD41-00-MAY95 HY5116100
Contextual Info: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide

A9HA

Abstract: SA11
Contextual Info: O K I Semiconductor MSM5 1 16100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116100 is a new generation dynamic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the M SM 5116100 is OKI's CMOS silicon gate process technology.

Contextual Info: 5116100 Series 16,777,216-word x 1-bit Dynamic RAM HITACHI ADE-203-646D Z Rev. 4.0 Jun. 24, 1997 Description The Hitachi HM 5116100 is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The 5116100 offers

Contextual Info: M O S E L V IT E L IC PRELIMINARY 51161024 6 4 K x 16 STATIC RAM Features Description • ■ ■ ■ ■ The V 61C 51161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with

Contextual Info: ADE-203-178B Z 5116100A Series 16,777,216-word x 1-bit Dynamic Random Access Memory H IT A C H I Nov2r 99: The Hitachi H M 5116100A is a CMOS dynamic R A M o rg an ized 1 6 ,7 7 7 ,2 1 6 -w o rd x 1-bit. It employs the most advanced CMOS technology for

Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 4k-Refresh HYB 5116160BSJ-50/-60/-70 A d v a n c e d In fo rm a tio n • 1 0 4 8 576 w o rd s by 16-bit o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re m ax. 550 a ctive m W (-50 ve rsio n )

Contextual Info: H M 5116100 S e r ie s - Preliminary 16,777,216-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION H M 5U 6100J Series T h e H itachi H M 5 1 16 10 0 is a C M O S dyn am ic R A M org an ized 16,777,216-w ord x 1-bit. It em ploys the m ost a d v a n ce d C M O S technolog y for high perform a n ce and