5117400A Search Results

Q907

Abstract: Q67100-Q915 Q554b
Contextual Info: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: M UT" >5" 5 HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1,1994 HITACHI The HB56A441BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A441BR is 72-pin single in­

ALRS8

Contextual Info: m iir 1^ 2 , 5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 5117400A /A L is a CMOS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high p erform ance and low pow er. The

Contextual Info: HB56D836 Series 8 ,3 8 8 ,6 0 8 -w o r d x 3 6 -b lt H ig h D e n s ity D y n a m ic R A M M o d u le The HB56D 836 is a 8 M x 36 dynam ic RAM module, mounted 16 pieces of 16-Mbit DRAM HM 5117400AS sealed in SOJ package and 8 pieces of 4-M bit DRAM (H M 514100B S/C S)

RAS 05

Abstract: HB56D436SBR-7AC HB56D436BR-7A HBS6D436SBR-8A hb56d436br-6ac
Contextual Info: HB56D436 Series 4,194,304-word x 36-bit High D ensity D ynam ic R AM Module T h e H B 56D 436 is a 4 M x 36 d y n am ic RA M m o d u le, m ounted 8 p iece s o f 16 -M b it D R A M H M 5117400A S sealed in SO J package and 4 p ie c e s o f 4 -M b it D R A M (H M 5 1 4 1 0 0 B S /C S )

Contextual Info: O K I Semiconductor MSM5 1 17400 A 4,194,304-Word x 4-Bit D YNAM IC RAM : FAST PAGE M O DE TYPE D E S C R IP T IO N The 5117400A is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the M SM 5117400A is O K I's C M O S silicon gate process technology.

Contextual Info: S IE M E N S 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Prelim inary Information • • • 4 194 304 words by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time:

Contextual Info: O K I Semiconductor M SM 5117400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 5117400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 5117400A achieves high integration, high-speed operation, and low-power

HB56A841BR-6A

Abstract: D8553
Contextual Info: HB56A841BR Series 8,388,608-Word x 40-Btt High Density Dynamic RAM Module HITACHI The HB56A841BR is a 8 M x 40 dynamic RAM m odule, m ounted 20 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A841BR is 72-pin single in­

Contextual Info: SIEMENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: 5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The 5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The 5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

HB56D836SBT-AC

Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Contextual Info: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms

D74HA3.7A-C

Contextual Info: HB56D836BT/SBT-6AC/7AC/8AC Preliminary 8,388,608-Word x 36-Bit High Density Dynamic RAM Module HITACHI ¡¡SS,» T h e H B 5 6 D 8 3 6 is a 8 M x 36 d y n a m ic R A M m o d u le, m o u n ted 16 p ieces o f 16-M bit D R A M H M 5 1 1 7 4 0 0 A S sealed in S O J p a ck a g e a n d 8

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: EIAJ ED-4701-1 IEC60068 repair manual suzuki The Japanese Transistor Manual 1981 JIS-C-7032 AB-6201 Diode SMD SJ 19 electron gun CRT 1978 Data catalog
Contextual Info: This version: Sep. 2001 Previous version: Nov. 1996 DATA BOOK for QUALITY/RELIABILITY INTRODUCTION Thank you for supporting Oki Semiconductor products. To welcome the dawn of a new age of unlimited potential brought about by advances in the global network

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1

HY5117400A

Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
Contextual Info: 5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The 5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he 5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

induction cooker schematic diagram

Abstract: schematic diagram induction cooker gas cooker circuit ignitor 4701-306 foundry metals quality MANUALS transistor 1411 tester diagram induction cooker yamaha amplifier a 550 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR GAS COOKER IGNITOR
Contextual Info: '04 Hand Book for QUALITY/RELIABILITY Issue Date: May 11, 2004 INTRODUCTION Thank you for supporting Oki Semiconductor products. To welcome the dawn of a new age of unlimited potential brought about by advances in the global network information revolution, the Oki semiconductor business was launched as a new company, Silicon Solution

DYNAMIC RAM CROSS REFERENCE

Abstract: DYNAMIC RAM dynamic ram module 5116800 hyb 511
Contextual Info: SIEM EN S Contents Contents Page Summary of Types incl. ordering codes . 9 Packing Inform

sem 2106 inverter diagram

Abstract: induction cooker schematic diagram automatic brake failure indicator and engine heating alarm working principles of dc fan in toshiba air conditioner atm with an eye seminar report sem 2106 inverter transistor smd marking mx ODOMETER transistor 9015 c sem 2106 manual
Contextual Info: This version: Jan. 1998 Previous version: Nov. 1996 E2S0001-27-Y3 Introduction Thank you for supporting OKI Semiconductor products. In the rapidly advancing electronics industry, types of semiconductor applications are diversified, and customer demands for

m51174

Abstract: m5117400 M511740
Contextual Info: ADE-203-180C Z H M 5 1 1 7 4 0 0 A / A L Series 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 3.0 Nov. 22, 1994 HITACHI T he H ita c h i H M 5 1 1 7 4 0 0 A /A L is a C M O S dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology

HYB514100BJ-70

Abstract: L-SIM-30-1 hyb 511
Contextual Info: Summary of Types SIEM ENS Summary of Types Type Ordering Code Package Description Q67100-Q512 Q67100-Q427 Q67100-Q428 Q67100-Q518 067100-0519 Q67100-Q520 Q67100-Q521 Q67100-Q522 Q67100-Q523 Q67100-Q524 Q67100-Q525 Q67100-Q526 Q67100-Q527 Q67100-Q528 Q67100-Q529

Q67100-Q765

Abstract: 32200S-70 Q67100-Q470 94500S-70 514256B-80 Q67100-Q840 Q67100-Q914 Q67100-Q437 322120S-70
Contextual Info: SIEM EN S Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Type Ordering Code Page Q67100-Q512 Q67100-Q427 Q67100-Q428 Q67100-Q518 Q67100-Q519 Q67100-Q520 Q67100-Q526 Q67100-Q527 Q67100-Q524 Q67100-Q525 Q67100-Q521 Q67100-Q522

Contextual Info: HB56D473EJ Series 4,194,304-word x Preliminary 72-bit High Density Dynamic RAM Module The H B 56D 473EJ belongs to 8 byte DIM M Dual In -lin e M em ory M o d u le fam ily , and has been developed as an optim ized m ain m em ory solution for 4 and 8 Byte processor applications.