5117800B Search Results

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

Contextual Info: SIEM ENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: AC lCAC RAS access time -50 -60 -70 50 60 70 ns CAS access time 13 15

WL4 550

Abstract: Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 SOJ-28
Contextual Info: 2M x 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • • • • • • • • 2 097 152 words by 8-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC

Contextual Info: HB56A232D Series 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-300 Z Description The HB56A232D is a 2 M x 32 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces o f 16-Mbit DRAM (HM 5117800BTT) sealed in TSOP package. An outline o f the

siemens FCVP

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 A d v a n c e d In fo rm a tio n • 2 0 9 7 152 w o rd s by 8 -b it o rg a n iz a tio n • S in g le + 5 V ± 10 % su p p ly • 0 to 70 C o p e ra tin g te m p e ra tu re • Low p o w e r d issip a tio n

Siemens 3SB 180

Abstract: TNC 24 mk 2 Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 siemens FLH 5117800BSJ-50
Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • 2 097 152 words by 8-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • 2 097 152 words by 8-bit organization • 0 to 70 ‘C operating temperature • Performance: -50 -60 -70 ÍRAC RAS access time 50 60 70 JCAC CAS access time 13 15

Contextual Info: SIEM EN S 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: •

Contextual Info: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

HB56D836SBT-AC

Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Contextual Info: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

thv8

Abstract: HYB39S16800T 16m x 4 hyb
Contextual Info: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15

Q67100-Q2018

Abstract: Q67100-Q2019 Q67100-Q976 Q67100-Q977
Contextual Info: SIEM EN S 2M X 32-Bit Dynamic RAM Module HYM 322030S/GS-60/-70 Advanced Inform ation 2 097 152 words by 32-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle tim e -60 version 70 ns access time 130 ns cycle tim e (-70 version)

Q67100-Q2018

Abstract: Q67100-Q2019 Q67100-Q976 Q67100-Q977
Contextual Info: 2M x 32-Bit Dynamic RAM Module HYM 322030S/GS-60/-70 Advanced Information • 2 097 152 words by 32-bit organization • • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version) CAS-before-RAS refresh

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

HM5117800BLTT6

Contextual Info: 5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5,1996 Description The Hitachi 5117800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 5117800B offers Fast

HYB5117800

Abstract: HYB3117800 smd marking AAAA wl4 smd marking
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode 5117800BJ/BSJ-50/-60 HYB3117800BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: •

BT 804

Contextual Info: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes incl. ordering codes . 13

Contextual Info: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322030S/GS-50/-60/-70 Advanced Inform ation • 2 097 152 words by 32-bit organization • 1 memory bank • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

Contextual Info: 2M x 32-Bit Dynamic RAM Module HYM 322030S/GS-50/-60/-70 Advanced Information • 2 097 152 words by 32-bit organization • 1 memory bank • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

3165805AT-60

Abstract: Q67100
Contextual Info: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60

Contextual Info: •HYUNDAI H Y 5 1 17 8 0 0 B .H Y 5 1 16 8 0 0 B 2Mx8, Fast Page mode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is

HYB3117800

Abstract: HYB5117800 SOJ-28
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC