512KX9 Search Results

rdram

Abstract: MB814953 RDRAM Clock rambus channel
Contextual Info: i —* - Q> ~ 2 - 3 ' I FUJITSU LT» S3E D • 374175b □003427 122 « F C A J September 1992 Edition 1.1 DATA fíH F F T MB814953 4.5 MBIT RDRAM DESCRIPTION The MB814953 is a new generation ultra high speed CM OS Rambus™ DRAM organized as 512KX9. The MB814953 uses advanced circuit design techniques with standard

Contextual Info: TOSHIBA •ìD1 7 2 4 fl Ü G E S O M O TOSHIBA LOGIC/MEMORY SI S « T O S S b'IE D CMOS 512KX9 RDRAM TC59R0409 t a r g e t s il ic o n g a t e s p e c DESCRIPTION This a new generation ultra high speed CMOS Rambus™ DRAM organized as 512KX9. It uses advanced

TC59R0409

Contextual Info: TOSHIBA TC59R0409 S i l i c o n g a t e CMOS 512KX9 RDRAM t a r g e t s p e c DESCRIPTION T h is a n ew g en eratio n ultra h ig h sp eed C M O S R am b u s™ D R A M org a n iz e d as 5 12K X 9. It u ses advanced circ u it d e sig n te c h n iq u es w ith stan d a rd C M O S p ro c e ss tech n o lo g y . T h e sense a m p lifie rs act as a cac h e and burst

direct rdram rambus

Abstract: RDRAM Clock rambus channel fujitsu rdram
Contextual Info: September 1992 Edition 1.1 fujÍtsu DATA SHEET MB814953 4.5 MBIT RDRAM W DESCRIPTION The MB814953 is a new generation ultra high speed CMOS Rambus™ DRAM organized as 512KX9. The MB814953 uses advanced circuit design techniques with standard CMOS process technology. It utilizes the 18,432 sense amplifiers as a

Contextual Info: S A MS UN G E L E C T R O N I C S INC L.7E D • 7ib4142 0D15Ö57 7fl5 KM49C512A/AL/ALL CMOS DRAM 512Kx9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM49C512A/AL/ALL is a CMOS high speed 524,288 bit x 9 Dynamic Random A ccess Memory.

DRAM 64kx16

Abstract: dram zip 256kx16
Contextual Info: Changed Point in '96 DRAM Databook Compared with '95 databook Changed Point in '96 DRAM databook Remarks - Remove TSOP ll(reverse) package General - Remove 80ns version in 5V product - Remove SC Mode, WPB Mode product - Remove 512Kx9 and 256Kx18 product

Contextual Info: KM49C512A/AL/ALL CMOS DRAM 512Kx9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM49C512A/AL/ALL is a CMOS high speed 524,288 bit x 9 Dynamic Random Access Memory. Its design is optimized for high performance applica­

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

723653

Abstract: 72V7290 72V3613 72V7250 72V3611 72V3623 72V72100 72V7230 72V7240 72V7260
Contextual Info: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. July’00 IDT FIFO Memory Products Quick Reference Guide

723653

Abstract: BI 7284 72V7250 72V72100 72V7230 72V7240 72V7260 72V7270 72V7280 72V7290
Contextual Info: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. Jan’00 IDT FIFO Memory Products Quick Reference Guide

Contextual Info: 2.5 VOLT HIGH-SPEED TeraSync FIFO IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 18/131,072 x 9,

IDT72T18105

Abstract: IDT72T18115 IDT72T18125 IDT72T1845 IDT72T1855 IDT72T1865 IDT72T1875 IDT72T1885 IDT72T1895
Contextual Info: 2.5 VOLT HIGH-SPEED TeraSync FIFO IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 18/131,072 x 9,

32kx18

Contextual Info: 2.5 VOLT HIGH-SPEED TeraSync FIFO PRELIMINARY IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 18/131,072 x 9,

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

723653

Abstract: 72V841 72825 72V3622 BI 7284 72V3613 723674 72V211 72V221 72V241
Contextual Info: Selector Guide for FIFO Memory Products • Synchronous FIFOs SuperSync II, SuperSync™ SyncFIFO™, DualSync™ • Bi-Directional Synchronous FIFOs • Asynchronous FIFOs the leading provider of FIFO memories. July’99/PC IDT FIFO Memory Products Width

Contextual Info: STI361000D2 72-PIN DIMMS 1M X 36 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI361000D2 is a 1M br: x 36 Dynamic RAM high density memory module. The Simple Technology STI361000D2 consist of eight CMOS 512K x 9 Dits DRAMs in

Contextual Info: SM536512W April 1996 Rev 0 SMART Modular Technologies SM536512W 2MByte 512K x 36 CMOS DRAM Module General Description Features The SM536512W is a high performance, 2-megabyte dynamic RAM module organized as 512K words by 36 bits, in a 72-pin, leadless, SIMM package.

A67L06181

Abstract: A67L06181E A67L93361 A67L93361E 512Kx9
Contextual Info: A67L06181/A67L93361 1M X 18, 512K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 1M X 18, 512K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History History Issue Date Remark 0.0 Initial issue August, 20, 2005 Preliminary 0.1 Modify DC specification to exact value

A67L83361E

Abstract: A67L93181 A67L93181E
Contextual Info: A67L93181/A67L83361 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History History Issue Date Remark 0.0 Initial issue July 13, 2005 Preliminary 0.1 Modify DC specification to exact value

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

KM418C256

Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80

BGA 144

Abstract: 208 BGA 72T3665 240-BGA 72T36125
Contextual Info: Selector Guide for TeraSync FIFOs from the leading provider of FIFO solutions • 2.5V core voltage • 225 MHz high-speed operation • Densities up to 9 M-bit • 9, 18, 36, 72-bit configurations • BGA packaging, including JTAG TeraSync the next generation

72V273

Contextual Info: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 8,192 x 18/16,384 x 9 16,384 x 18/32,768 x 9 32,768 x 18/65,536 x 9 65,536 x 18/131,072 x 9 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 FEATURES: • • • • • • • • Choose among the following memory organizations: