7IB4142 Search Results

Contextual Info: S A MS UN G E L E C T R O N I C S INC L.7E D • 7ib4142 0D15Ö57 7fl5 KM49C512A/AL/ALL CMOS DRAM 512Kx9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM49C512A/AL/ALL is a CMOS high speed 524,288 bit x 9 Dynamic Random A ccess Memory.

remote control toy car circuit diagram

Abstract: remote control toy car diagram remote control toy car circuit ic KA2304 remote control toy circuit diagram remote control toy car toy car remote i.c remote control toy car circuit Remote Control Toy Car IC ulnk
Contextual Info: SAMSUNG S E M I C ON DU CT OR INC TS •- ••• ' •' • -• - Ï Ë § 7ib4142 DD043S3 0 '•••• ‘T - “ T n - l i ' i LINEAR INTEGRATED CIRCUIT KA2304 TOY RADIO CONTROL ACTUATOR The KA2304 is a m onolithic integrated circu it designed for remote

Contextual Info: KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8:185mA (Max.)

Contextual Info: KS0122 Multimedia ELECTRONICS MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required clocks and video timing signals are

Contextual Info: KA78MXXR ELECTRONICS Industrial 3-TERMINAL 0.5A POSITIVE VOLTAGE REGULATORS The KA78MXXR/I sefles of three - terminal positive regulators are available in the D —PACK package with several fixed output voltage making it useful in a wide range of applications.

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E I • 7 T b 4 1 4 2 D D l b l G 3 025 H S M G K KM41C16101 CMOS DRAM 1 6 M x 1 Bit CM OS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16101 is a CMOS high speed 16,777,216 bit x 1 Dynamic Random Access Memory. Its

Contextual Info: KMM372F400BK/BS KMM372F410BK/BS DRAM MODULE KMM372F400BK/BS & KMM372F41OBK/BS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCR IPTIO N FEATURES The Samsung KMM372F40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: KA78MXXR/I FIXED VOLTAGE REGULATOR POSITIVE 3-TERMINAL 0.5A POSITIVE VOLTAGE REGULATORS D-PAK T h e KA78M XXR/I series of three - term inal positive regulators are available in the D -PAK package w ith several fixed output voltage making it useful in a w ide range of applications.

U07K

Abstract: 741i REF04 KM416S4020AT-12
Contextual Info: K M 4 16 S 4 0 2 1 A T SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

Contextual Info: KM48C2004BS CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

ka33v

Contextual Info: KA33V Industrial ELECTRONICS SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT VOLTAGE STABILIZAER FOR ELECTRONIC TUNER The KA33V is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners. FEATURES • Low Temperature Coefficient

Contextual Info: CMOS SRAM KM684002/L 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation (TTL) 60mA (Max.) Standby 3mA (Max.) (CMOS) L-Ver 500// A (Max) Operating : KM684002-17: 180mA (Max.) KM684002-20: 170mA (Max.)

Contextual Info: IRLR/U210A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on - 1 .5 Q ■ Lower Input Capacitance lD = 2.7 A ■ Improved Gate Charge ■ Extended Safe Operating Area D -P A K ■ Lower Leakage Current : 10 |iA (M ax.) @ VOS = 200V

Contextual Info: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port