512X8 Search Results

TA 7129

Abstract: 93438
Contextual Info: 93438 ^ ISOPLANAR SCHOTTKY TTL MEMORY 512x8-B IT PROGRAMMABLE READ ONLY MEMORY D E S C R IP T IO N — The 93438 is a fully decoded 4096-bit field Programmable R O M organ­ ized 512 words by eight bits per word._The 93438 has uncommitted collector outputs.

XICOR x2004

Abstract: X2004 X2004M X2004M-25
Contextual Info: JÜH t PRELIMINARY INFORMATION 4K Military 512x8 Bit X2004M Nonvolatile Static RAM is fabricated w ith the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma­ ble nonvolatile memories. The X2004 features the JEDEC approved pinout for byte-wide memories, com­

siemens Package Outlines

Contextual Info: » ÔE3St.D5 □GCHG 4Q MS'! SIEMENS 4 Kbit 512x8 bit Serial CMOS EEPROMs, Serial Peripheral Interface SLx 25C04 Preliminary Features • Data EEPROM internally organized as 512 bytes and 64 pages x 8 bytes • Low power CMOS • V cc = 2.7 to 5.5 V operation

OS212

Abstract: national 93c66A
Contextual Info: 93C66A/B M ic r o c h ip 4K 5.0V Automotive Temperature Microwire Serial EEPROM FEATURES • Single supply 5.0V operation • Low power CMOS technology - 1 mA active current typical - 1 (iA standby current (maximum) • 512x8 bit organization (93C66A)

Contextual Info: MT42C8254 256K X 8 VRAM [W IIC R Q N 256K X 8 DRAM WITH 512x8 SAM VRAM • Industry-standard pinout, tim ing and functions • NIBBLE 4-bit W RITE and M ASKED W RITE access cycles • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply

Contextual Info: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte

AN404

Abstract: ST24C04 ST24W04 ST25C04 ST25W04
Contextual Info: r z j SG S-TH O M SO N ^ 7 # , SfflQ@^ lllLi @TrMRia(gi ST24C04, ST25C04 ST24W04, ST25W04 SERIAL ACCESS 4K ( 512x8 EEPROM 1 MILLION ERASE/WRrTE CYCLES with 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x04 versions - 2.5V to 5.5V for ST25x04 versions

Contextual Info: A p p l ic a t io n N o t e A V A I L A B L E AN 56 f c u X20C05 4K r 512x8 High Speed AUTOSTORE NOVRAM FEATURES D E S C R IP T IO N • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Nonvolatile Store Operations — Retention: 100 Years Minimum

x2864

Abstract: X2864A x2864b X24LC04D X24LC04DI X24LC04P X24LC04PI X24LC04S X24LC04SI
Contextual Info: im PRELIMINARY INFORMATION X24LC04 X24LC04I Commercial Industrial 4K 512x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 3 V -6 V Vcc Operation • Low Power CMOS — 2 mA Active Current Typical —60 ixA Standby Current Typical • Internally Organized as Two Pages

NOVRAM

Contextual Info: ^417143 SEE D XICOR INC Advance Information TÖ3 X i Q K X20C05 512x8 High Speed AUTOSTORE NOVRAM T -4 b r2 3 -3 ~ l 4K FEATURES DESCRIPTION • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Store Operations — Retention: 100 Years Minimum

Contextual Info: QSK 512x8 Bit X2404M Military 4K Electrically Erasable PROM TYPICAL FEATURES • Internally Organized as Two Pages —Each 256 x 8 • 2 Wire Serial Interface • Provides Bidirectional Data Transfer Protocol • Eight Byte Page Write Mode —Minimizes Total Write Time Per Byte

Contextual Info: xhe Commercial Industrial 4K X2004 X2004I 512x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma­ ble nonvolatile memories. The X2004 features the JEDEC approved pinout for byte-wide memories, com­

NCC 5551

Abstract: CI 555 data X20C04 X20C05 X20C16 IS555
Contextual Info: Advance Information X20C05 4K 512x8 High Speed AUTOSTORE NOVRAM_ FEATURES DESCRIPTION • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Store Operations — Retention: 100 Years Minimum • Power-on Recall

CAT25010

Contextual Info: CAT25010, CAT25020, CAT25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25010/20/40 are 1-Kb/2-Kb/4-Kb Serial CMOS EEPROM devices internally organized as 128x8/256x8/512x8 bits. They feature a 16-byte page

rom 512x8

Abstract: chip 8205 82S214 8205 A 82S215
Contextual Info: signotics 2048-BIT BIPOLAR ROM 256x8 ROM 4096-BIT BIPOLAR ROM (512x8 ROM) 8204 8205 82S 214) 82S215 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION T h e 8 2 0 4 / 8 2 S 2 1 4 a n d 8 2 0 5 / 8 2 S 2 1 5 are S c h o ttk y - c la m p e d R e ad

82S147B

Abstract: F0180 mux 8 to 1 timing
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding

25616

Abstract: IN93AA66A
Contextual Info: IN93AA66N, IN93AA66D 4K-BIT SERIAL EEPROM WITH MICROWIRE INTEFACE compatible to САТ93С66 Catalyst DESCRIPTION The IN93LC66 is a Electric erasable programmable ROM (EEPROM) memory data capacity 4K (512x8 or 256x16) with 3-wire interface. There are 3 modification of ICs

IN25AA020D

Abstract: SCK 058 IN25AA020 A8011
Contextual Info: IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL PERIPHERAL INTERFACE SPI . DESCRIPTION The IN25АА020N/D are a 2K(256x8) serial Electrically Erasable PROM with SPI interface. *The IN25АА040N/D are a 4K (512x8) serial Electrically Erasable PROM with SPI interface (SPI).

M95010

Abstract: M95020 M95040 M95040-WBN6 M95040-WMN6 ST10
Contextual Info: 2001-12-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-975-40 M95040-WBN6 512x8 EEPROM 73-975-57 M95040-WMN6 512x8 EEPROM M95040 M95020, M95010 4/2/1 Kbit Serial SPI Bus EEPROM

ST24C04

Abstract: VCC-10 T24C0
Contextual Info: rz 7 SGS-THOMSON ^ 7 # M gfô@i[Li(gïï[ÏMD(gt ST24C04 4K BU (512X8 SERIAL ACCESS CMOS EEPROM MEMORY PRELIMINARY DATA • 2 PAGES OF 256 X 8 BITS ■ 2 WIRE SERIAL INTERFACE, COMPATIBLE WITH THE INTER-INTEGRATED CIRCUIT (l2C) BUS. ■ SINGLE POWER SUPPLY (READ AND WRITE)

marking S1T

Abstract: 25040e
Contextual Info: CAT25010, CAT25020, CAT25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM Description The CAT25010/20/40 are 1−Kb/2−Kb/4−Kb Serial CMOS EEPROM devices internally organized as 128x8/256x8/512x8 bits. They feature a 16−byte page write buffer and support the Serial

27s31

Contextual Info: a Am27S31 /27S31A Advanced Micro Devices 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide

Contextual Info: a Am4701 -45 Bidirectional 512x8 FIFO Am4701 BIFIFO Previously 67C4701 Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 2-512x6 FIFO buffer, provides asynchronous bidirectional full duplex communication. • Generates and detects framing bit. • Full and Empty Flags

Contextual Info: HOLTEK r r HT24L C04 4K 2- Wire CMOS Serial EEPROM Features • • • • • • Operating voltage: 2.4V~5.5V Low power consumption - Operation: 5mA max. - Standby: 5|iA max. Internal organization - 4K HT24LC04 : 512x8 2-wire serial interface Write cycle time: 5ms max.