512K X 8 SRAM Search Results

68S16000

Abstract: AB-020
Contextual Info: 512K x 32 SRAM MODULE PUMA 68S16000/AB-020/025/35/45 Issue 5.0 : May 2001 • User Configurable as 8 / 16 / 32 bit wide output. • Operating Power : • Standby Power : CMOS • Single 5V±10% Power supply. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM CS1

Contextual Info: CY14B108L CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small

CY14B108N-BA25XI

Abstract: 54TSOP CY14B108L-BA25XI
Contextual Info: CY14B108L CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small

Contextual Info: IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module The IDT7MB4048 Is a 4-megabit (512K x 8) Static RAM module constructed on a multilayer epoxy laminate (FR-4)

Contextual Info: MOSEL MS6M 8512 PRELIMINARY 512K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • 4Mb SRAM module compatible with JEDEC standard pinout for 512k x 8 SRAM The Mosel MS6M8512 is a 4 Megabit 4,194,304 bits static random access memory module organized as 512K

A81L801

Abstract: 69LD
Contextual Info: A81L801 Stacked Multi-chip Package MCP 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM Preliminary Document Title Stacked Multi-chip Package (MCP) 1M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM

5962-06203

Abstract: 5962-07210 "rad" sram
Contextual Info: Aeroflex 4M SRAM Industry Comparison 0.18µm CMOS Aeroflex 0.25µm Bulk CMOS 0.35µm CMOS SOI 0.25µm CMOS 0.18µm 0.25µm 0.35µm 0.25µm 66 MHz @ 15ns 512K x 8 15 ns -55° to 125°C 28MHz @ 30 ns 512K x 8 30ns(-550 to 1250C) 40 MHz @20ns 512K x 8 < 20 ns (-550 to 1250C)

GVT72512A8

Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 ASYNCHRONOUS SRAM 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM

SOIC-36 300

Abstract: 7C1048A CY7C1048 JESD22 512K x 8 bit sram 32 pin
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97118 VERSION 1.2 January, 1998 512K x 8 SRAM - R32D Technology - Fab4 Qualification CY7C1048/CY7C1049/CY62148 Cypress Semiconductor, Inc. 512K x 8 SRAM - R32 Technology Device: CY7C1048/CY7C1049/CY62148 Package: SOIC/SOJ

GS74108AGP-12

Contextual Info: GS74108ATP/X TSOP, FP-BGA Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 512K x 8 4Mb Asynchronous SRAM Features FP-BGA 512K x 8 Bump Configuration Package X • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum

Contextual Info: GS74108ATP/X TSOP, FP-BGA Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 512K x 8 4Mb Asynchronous SRAM Features FP-BGA 512K x 8 Bump Configuration Package X • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum

GS74108AX-8

Abstract: GS74108AGP-10I 74108A
Contextual Info: GS74108AGP/X TSOP, FP-BGA Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 512K x 8 4Mb Asynchronous SRAM Features FP-BGA 512K x 8 Bump Configuration Package X • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum

DPS512X32MKY5

Contextual Info: 16 Megabit High Speed SRAM DPS512X32MKY5 PRELIMINARY DESCRIPTION: The DPS512X32MKY5 is the 512K x 32 SRAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 512K x 8 SRAM’s that are configured as 512K x 32.

MSM8512SLMB

Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 512K x 8 SRAM MSM8512 - 70/85/10 Issue 4.5 : April 2001 Description 524,288 x 8 CMOS Static RAM The MSM8512 is a 4Mbit monolithic SRAM organised as 512K x 8 with access times from

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet June 2006 www.aeroflex.com/4MSRAM FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

Memories

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 www.aeroflex.com/memories FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

UT8R512K8

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 www.aeroflex.com/memories FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2006 www.aeroflex.com/4MSRAM FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet September 2008 www.aeroflex.com/memories FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet June 2006 www.aeroflex.com/4MSRAM FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

89C1632

Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

89C1632

Abstract: 512K x 8 bit sram 32 pin
Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

AK68512D1C

Contextual Info: AK68512D 524,288 x 8 Bit CMOS Static Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK68512D-1C high density memory module is a static random access memory organized in 512K x 8 bit words. The assembly consists of one medium speed 512K x 8 SRAM in a TSOP

Contextual Info: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, DDRIIb4 SRAM 18Mb DDRII CIO SRAM MT57W2MH8J MT57W1MH18J MT57W512H36J 4-Word Burst FEATURES • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window