512KX16 Search Results

SAMSUNG MCP

Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Contextual Info: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.

14Q7

Contextual Info: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access

KM23V8100D

Abstract: KM23V8100DET KM23V8100DT
Contextual Info: CM OS M ASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES G ENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w ord m o de) • F a st a c c e s s tim e : 3 .3 V o p e ra tio n : 1 0 0 n s (M a x .)

Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)

29F800T

Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Contextual Info: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

cmos static ram 1mx8 5v

Contextual Info: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V

Contextual Info: WE512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES  Access Time of 140, 150, 200ns  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection  Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE  Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  Weight:  Packaging • WSF2816-39G2UX - 8 grams typical

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

direct rdram rambus 1200

Contextual Info: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

da53

Abstract: DB26 0195c Outline T39
Contextual Info: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other

FM23MLD16

Abstract: 3.3v 1Mx8 static ram high speed
Contextual Info: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz

Contextual Info: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Apr.10.2001 Preliminary 01 Change Logo - Hyundai à Hynix Apr.28.2001

kor 2001

Contextual Info: HY62LF16804B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No History 00 Initial Release Draft Date Remark May.29.2001 Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any

Contextual Info: K6T8016C3M Family CMOS SRAM Document Title 512Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft June 18, 1999 Advance 1.0 Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from

Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX DUAL VOLTAGE LH28F800SUTD 8M 1024Kx8/512Kx16 3V Dual Work

Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F800SG 8M 512Kx16 Smart Voltage

Contextual Info: HY62UF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary

HY29F800T

Abstract: PSOP 44 Pattern HY29F800B
Contextual Info: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Contextual Info: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins

Contextual Info: K3N4V U 1000D-TC(E) CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)

HYSF6804A

Abstract: HY62SF16804A HY62SF16804A-C HY62SF16804A-I
Contextual Info: HY62SF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary