ICCX16 Search Results

Contextual Info: 64KX4 BASED Dense-Pac Microsystems, inc. C M O S SRAM FAM ILY DESCRIPTION: The Dense-Pac 64K X4 Based Fam ily consists of static ra n d o m a c c e s s m e m o rie s S R A M S o rg a n iz e d as described below. T h ese m em ories are ideally suited for use in large

Contextual Info: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900*  Weight FEATURES  Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical  Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: WE512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES  Access Time of 140, 150, 200ns  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection  Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE  Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  Weight:  Packaging • WSF2816-39G2UX - 8 grams typical

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE WSF128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)

FD11O

Contextual Info: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)

IDT8M624

Abstract: 8M624 8M624S 64k dynamic RAM 8M612S100 IDT8M624S
Contextual Info: Integrated Device Technology, Inc. 64K x 16 32K x 16 CMOS STATIC RAM MODULE FEATURES: • High-density CMOS static RAM module 64K x 16 organi­ zation IDT8M624S or 32K x 16 option (IDT8M612S) • Fast access time: — Commercial - 25ns (max.) — Military - 35ns (max.)

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Contextual Info: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Contextual Info: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: P CYM1828 PRELIMINARY / CYPRESS 32K x 32 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • 66-pin, 1.1-inch-square PGA package • Low active power — 3.3W max.

Contextual Info: 1CY M18 28 PRELIMINARY CYM1828 32K x 32 Static RAM Module Features is constructed using four 32K x 8 static RAMs mounted onto a multilayer ceramic substrate. Four chip selects CS1, CS2, CS3, CS4 are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any

SF512K16

Contextual Info: WHITE / M I C R O E L E C T R O N I C S W SF512K16-XXX 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • A ccess Tim es o f 35ns SRAM and 90ns (FLASH] ■ 10,000 E rase/Program Cycles ■ A ccess Tim es o f 70ns (SRAM) and 120ns (FLASH)

WSF2816-39G2UX

Abstract: SD10 SD12 SD13 SD14 SD15 WSF2816-39XX
Contextual Info: White Electronic Designs WSF2816-39XX 128KX16 SRAM/512KX16 FLASH MODULE FEATURES „ Access Times of 35ns SRAM and 90ns (FLASH) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (Package 400) 128Kx16 SRAM „ 512Kx16 5V FLASH „ Organized as 128Kx16 of SRAM and 512Kx16 of

A16 SMD

Abstract: SD10 SD13 SD14 SD15 WSF128K16-XXX
Contextual Info: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES „ Access Times of 35ns SRAM and 70ns (FLASH) „ Access Times of 70ns (SRAM) and 120ns (FLASH) „ Packaging „ TTL Compatible Inputs and Outputs „ Built-in Decoupling Caps and Multiple Ground Pins

SF128

Contextual Info: ACT–SF128K16 High Speed 128Kx16 SRAM/FLASH Multichip Module CIRCUIT TECHNOLOGY FEATURES www.aeroflex.com • 2 – 128K x 8 SRAMs & 2 – 128K x 8 Flash Die in ■ Packaging – Hermetic Ceramic One MCM ■ Access Times of 25ns SRAM and 60ns (Flash) or

CYM1838HG-25M

Abstract: CYM1838
Contextual Info: PRELIMINARY CYM1838 128K x 32 Static RAM Module Features Functional Description D The CYM1838 is a very high performance 4Ćmegabit static RAM module organized as 128K words by 32 bits. The module is constructed using four 128K x 8 static RAMs mounted onto a multilayer ceramic

30A008-00

Abstract: 256KX1 256KX16 256KX4 S2564 CFT-5 A618
Contextual Info: DENSE-PAC MICROSYSTEMS 0?E D | STSTMIS 0000135 O | 256KX1 BASED Dense-Pac Microsystems, Inc. C M O S SRAM FAM ILY -PRELIM INARYDPS25616 DPS20482 DESCRIPTION: T h e D e n se -P ac 2 56K X1 B ase d Fa m ily m od ules con sists o f v e ry high sp eed 256K X1 b a sed static R A M s w h ic h

Contextual Info: Integrated Device Technology, Inc. 64K X 16 32K X 16 CMOS STATIC RAM MODULE FEATURES: • High-density C M O S static RAM module 64K x 16 organi­ zation ID T 8 M P 6 2 4 o r 3 2 K x 16 option (ID T 8M P 61 2) • Fast access time: 25ns (max.) • S eparate upper byte (1/09-16) and tower byte (I/O i -b)

Contextual Info: WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  100,000 Erase/Program Cycles  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture  Packaging

Contextual Info: WSF2816-39XX 128Kx16 SRAM/512Kx16 FLASH MODULE  Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  Weight:  Packaging • WSF2816-39G2UX - 8 grams typical

SD14

Abstract: SD15 WSE128K16-XXX ED11 ED15 SD10 SD12 SD13
Contextual Info: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES „ Access Times of 35ns SRAM and 150ns (EEPROM) „ Access Times of 45ns (SRAM) and 120ns (EEPROM) „ Access Times of 70ns (SRAM) and 300ns (EEPROM) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX TWS 434 pin diagram SD3 smd
Contextual Info: WSF128K16-XXX HI-RELIABILITY PRODUCT 128KX16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 35ns SRAM and 70ns (FLASH) ■ TTL Compatible Inputs and Outputs ■ Access Times of 70ns (SRAM) and 120ns (FLASH)