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Contextual Info: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung	OCR Scan	KMM540512CM 512Kx40 KMM540512CM isa512Kbitsx40 256Kx4 20-pin 72-pin KMM540512CM-6 KMM540512CM-7	PDF
Contextual Info: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)	Original	512Kx40-SOP 3DSR20M40VS6507 512Kx40, 256Kx16 100Krad 110MeV 100nF MMXX00000000XXX 3DFP-0507-REV	PDF
Contextual Info: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)	Original	512Kx40-SOP 3DSR20M40VS6507 512Kx40, 256Kx16 100Krad 110MeV 100nF MMXX00000000XXX 3DFP-0507-REV	PDF
30 pin simm Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM Contextual Info: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM	OCR Scan	KMM58256CN KMM59256CN KMM532256CV/CVG KMM536256C/CG KMM32512CV/CVG KMM536512C/CG KMM536512CH KMM540512C/CG' KMM540512CM KMM581000C 30 pin simm 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM	PDF
251A137 Abstract: 512KX40 251A137-517 4927N w26m 251a137-527 251A137-101-PS001 EOA20156 BAE 0002 BAE Systems 251A137 Contextual Info: REVISIONS R E L or E C O D E S C R I P T I O N REV ECO EOA20156 G D A T E Refer to Document Change History herein 01-19-04 A P P R O V E D K. Mason NOTES: 1. This is a TOP LEVEL DRAWING TLD . 2. BAE SYSTEMS - Manassas, VA reference only. 3. All sheets are the same revision status.	Original	EOA20156 512Kx40, 1RU44 251A137 512Kx40 A0-A18 DQ0-DQ39 251A137-517 4927N w26m 251a137-527 251A137-101-PS001 EOA20156 BAE 0002 BAE Systems 251A137	PDF
Contextual Info: Silicon360 S512 Series SRAMs 512Kx16,x32,x40-bit Radiation Tolerant Static RAM Features: • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latch-up; Dose rate ranging from 1.0E9 to	Original	Silicon360 512Kx16 x40-bit 8E11rad/second 106MeV-cm2 84-Lead	PDF
mcm2018a Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information	OCR Scan	A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D	PDF
sun hold RAS 0610 Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000 Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information	OCR Scan	A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000	PDF