512KX8 BIT Search Results

512K x 8 bit sram 32 pin

Abstract: SRAM edac TM5005 16MB SRAM Static Random Access Memory SRAM TM5004 512KX8 SPACE POWER ELECTRONICS edac orbit 32
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 16Mb SRAM SPACE PRODUCTS 89C1632DRP 89C1632DRH 89C1632DRP Functional Block Diagram FLOW THRU EDAC CD[7:0] EDAC0 [7:0] 512k x 32 SRAM DATA BITS MD [31:0] 512kx8 CD[15:8] 512kx8 512kx8 512kx8 EDAC1 [15:8] CHECK BITS CD[23:16]

512Kx8 bit Low Power CMOS Static RAM

Abstract: EDI88512VA15MI EDI88512VA17MI EDI88512VA20MI EDI88512VA20MM EDI88512VA25MM
Contextual Info: ^EDI E D I8 8 5 1 2 V A -R P ELECTRONIC DESIGNS. INC 512Kx8 Ruggedized Plastic Static Ram 512Kx8 Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage o f using a plastic compo­

EM 319

Contextual Info: %ED l EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram EIEO RO M C 0BM3N& M C. 512Kx8 Static RAM CMOS, Monolithic F ea tu re s EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic compo­

A17A18

Contextual Info: EDI7F8512C Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features and Erasable Read Only Memory Module. Organized as 512Kx8 bit CMOS Flash Electrically Erasable Programmable 512Kx8 bits, the module contains four 128Kx8 Flash Memo­

EDI8F8512C70B6C

Abstract: EDI8F8512LP A410 EDI8F8512C
Contextual Info: EDI8F8512C 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Module Features 512Kx8 bit CMOS Static Random Access Memory • Access Times 20 thru 100ns • Data Retention Function EDI8F8512LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging

ED188512CA25CB

Contextual Info: ^EDI EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 5962-95600 Features 512Kx8 Static RAM CMOS, Monolithic 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs

Contextual Info: EDI88512C ^aecTROac E œseN& D NC I 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 55,70,85 and 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs

Contextual Info: ^EDI EDI88512VA-RP ELECTRONIC DESIGNS, INC 512Kx8Ruggedized Plastic Static Ram 512Kx8 Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­

EDI88512LPA17MI

Abstract: 75B7 EDI88512CA-RP EDI88512LPA
Contextual Info: W5X EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory T, 20 and 25ns • Access Times: 1 • Data Retention Function LPA version • Extended Temperature Testing

IC 7587

Contextual Info: W EDI88512CA-RP 3 X 512Kx8 Ruggedized e le c tr o n ic designs, inc. Plastic Static Ram 512m Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­

ED188512CA20N36B

Abstract: ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C
Contextual Info: W5X EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version

trc 9500

Abstract: EDI8F8513B20M6C EDI8F8513B25M6C EDI8F8513B35M6C
Contextual Info: ^EDI E D I8F 8513C 512Kx8 Static Ram ELECTRONIC DESIGNS. INC 512Kx8 Static RAM CMOS, Module Features The EDI8F8513C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or Static RAMs mounted on a multi-layered Random Access Memory epoxy laminate FR4 substrate.

Contextual Info: ^EDI EDI8F8513C 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Module Features The EDI8F8513C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or Static RAMs mounted on a multi-layered Random Access Memory epoxy laminate FR4 substrate.

Contextual Info: EDI88512VA-RP HI-RELIABILITY PRODUCT 512Kx8 Plastic Monolithic 3.3V SRAM CMOS FEATURES • 512Kx8 bit CMOS Static WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military

75B7

Abstract: EDI88512CA20MM EDI88512CA-RP EDI88512LPA EDI88512CA17MI
Contextual Info: EDI88512CA-RP W 3 X e le c tro n ic designs, in c . 512Kx8 Ruggedized Plastic Static Ram 5 1 2 m Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­

48pin TSOP

Abstract: 48pin HY29F400TT HY29F200B HY29F200
Contextual Info: •HYUNDAI QUICK REFERENCE GUIDE Flash Memory Quick Refrerence ORGANIZATION 2M bit 256KX8 (256Kx8/128Kx16) 4M bit (512Kx8) (512Kx8/256Kx16) 8M bit (1 Mx8) 98 Flash DATA BOOK PART NUMBER SPEED(ns) FEATURES PACKAGE HY29F002TT HY29F002TR HY29F002BT HY29F002BR

trc 9500

Abstract: EDI8F8513B20M6C EDI8F8513B25M6C EDI8F8513B35M6C EDI8F8513C
Contextual Info: EDI8F8513C 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Module Features The EDI8F8513C is a 4096K bit CMOS Static RAM based on four 128Kx8 or Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Functional equivalence to the monolithic four megabit Static

512 eeprom dip 32-pin

Abstract: WE512K8-XCX WE256K8-XCX WE128K8-XCX WE512K8 256KX8
Contextual Info: WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512KX8 BIT CMOS EEPROM MODULE FIG. 1 PIN CONFIGURATION TOP VIEW FEATURES • Read Access Times of 150, 200, 250, 300ns ■ JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package 300

Contextual Info: KM684000A Family_ CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.4 * CMOS •• Organization : 512Kx8 •■ Power Supply Voltage : Single 5V •• 10% ■ Low Data Retention Voltage : 2V Min

CC650

Abstract: H1-200-5
Contextual Info: EDI68512C ZEDi 4 Megabit 512Kx8 UV Erasable CMOS EPROM aECTOONC Dessus. NC. Advanced 4 Megabit(512Kx8) UVErasable CMOS EEPROM Features Fast Read Access Time - 70ns The EDI68512C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read

KM68U4000CL-L

Abstract: 3A3103
Contextual Info: Advance KM68V4000C, KM68U4000C Family CMOS SRAM 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.35|jm CMOS • Organization : 512Kx8 • Power Supply Voltage KM68V4000C Family : 3.3±Q.3V KM68U4000C Family : 3.0±0.3V

Contextual Info: KM684000A Family CMOS SRAM 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

7191B

Contextual Info: CMOS smfñ KM68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V

Contextual Info: W D EDI8F8512C I ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory