512KX8 SRAM DIP Search Results

EDI88512

Contextual Info: EDI88512CA-XMXG WPS512K8X-XRJXG White Electronic Designs 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability

512Kx8s

Contextual Info: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.

Contextual Info: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.

Contextual Info: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.

Contextual Info: EDI88512CA White Electronic Designs 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns  Data Retention Function LPA version  TTL Compatible Inputs and Outputs  Fully Static, No Clocks  Organized as 512Kx8

Contextual Info: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages

EDI88128C

Abstract: EDI88512C MIL-PRF38535
Contextual Info: White Electronic Designs EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. 512Kx8 bit CMOS Static Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and

Contextual Info: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages

Contextual Info: KM684000A Family CMOS SRAM 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

Contextual Info: W D EDI8F8512C I ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory

EDI8F8512C85B6C

Abstract: 28Kx8
Contextual Info: ^EDI _EDI8F8512C ELECTRONIC DESIGNS INC. * High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory

EDI88128C

Abstract: EDI88512C MIL-PRF38535
Contextual Info: White Electronic Designs EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES „ 512Kx8 bit CMOS Static „ Random Access Memory The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and

EDI8M8512LP120C6B

Contextual Info: ^EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8M8512C is a 4096K bit CMOS Static RAM 512Kx8 bit CMOS Static based on four 128Kx8 Static RAMs mounted on a multi­ Random Access Memory

ED188512C

Contextual Info: E D I885 12C ^ E D I Electronic D#rignf Inc.« Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic C M O S Static RAM. The32 pin DIP pinoutadheres tothe JEDEC standard for 512Kx8 bit C M O S Static

EDI88512

Contextual Info: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs

Contextual Info: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs

EDI88128C

Abstract: EDI88512C
Contextual Info: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs

BLF 272

Abstract: bq4842 bq4852Y BD-962
Contextual Info: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits

EDI88128C

Abstract: EDI8M8512C
Contextual Info: EDI8M8512C m 90/100/120/150 o \ Module The f u t u r s . . . Ä ¥ Ä M 1 O 512Kx8 SRAM CMOS, High Speed Module The EDI8M8512C is a 4096K 512Kx8 bit High Speed Static RAM module constructed using four EDI88128C (128Kx8) Static RAMs in leadless chip

Contextual Info: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

Contextual Info: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

Contextual Info: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

WDS6

Abstract: bd96 BM4B
Contextual Info: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

A35Z

Abstract: EDI88512CA35CB EDI88512C
Contextual Info: ^ED I EDI88512CA ELECTRONIC DESIGNS IN C • Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Ik M /h Features The ED I88512C A is a 4 m egabit M onolithic CMOS 512Kx8 bit CM OS Static S tatic RAM. Random Access M em ory • Access Tim es: 2 5 ,3 5 , and 45ns