512M X 8 BIT NAND Search Results

K9K4G08U0M-XIB0

Abstract: K9W8G08U1M-YCB0 48pin-TSOP1 K9K4G08U0M-XCB0 K9K4G08U0M-PCB0 K9K4G08U0M
Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003

K9K4G08U0M

Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003

SAMSUNG 4gb NAND Flash Qualification Report

Abstract: Samsung K9W8G08U1M K9K4G08U0M-YCB0 K9K4G08U0M-PCB0 K9W8G08U1M K9W8G08U1M-PCB0 May-31 1220AF K9K4G08U0M 48-pin TSOP
Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003

K9W8G08U1M-YCB0

Abstract: K9K4G08U0M-XIB0 SAMSUNG 4gb NAND Flash Qualification Report K9K4G08U0M
Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003

nand hamming code 2k bytes

Contextual Info: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34

512M x 8 Bit NAND Flash Memory

Abstract: K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0
Contextual Info: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34

512M x 8 Bit NAND Flash Memory

Abstract: K9F2G16U0M K9F2G08Q0M K9F2G16X0M
Contextual Info: K9K4G08U1M K9F2G08U0M K9F2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34

K9K4G08U0M-YCB0

Abstract: K9K4G16U0M-YCB0 K9K4G16Q0M-YCB0 K9K4G08Q0M-YCB0 K9K4G08U0M
Contextual Info: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003

K9XXG08XXM

Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9K4G08Q0M-PCB0 K9K4G16Q0M k9w8g16u1m K9K4G08Q0M K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16U0M K9W8G08U1M
Contextual Info: K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package

K9K4G08X0M

Abstract: ecc 2112 samsung 8GB Nand flash
Contextual Info: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Feb. 19. 200 3

K9XXG08XXM

Abstract: k9w8g16u1m K9K4G08Q0M-Y SAMSUNG 4gb NAND Flash Qualification Report Samsung K9W8G08U1M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16Q0M
Contextual Info: K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package

SAMSUNG 4gb NAND Flash Qualification Report

Abstract: K9K4G08U0M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16Q0M K9K4G16U0M K9W8G08U1M nand hamming code 2k bytes k9xxg16xxm
Contextual Info: K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package

H27U4G8

Contextual Info: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27 U_S 4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 *ba53f20d-240c* 1 B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000

Contextual Info: EN27LN4G08 EN27LN4G08 4 Gigabit 512M x 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years • Organization

TYAD00AC00BUGK

Abstract: SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1
Contextual Info: TYAD00AC00BUGK TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM, Nand E2PROM and Giga Byte Nand E2PROM Mixed Multi-Chip Package DESCRIPTION Lead-Free The TYAD00AC00BUGK is a mixed multi-chip package containing a 1,073,741,824-bit 536,870,912-bit x 2devices

ty9000

Abstract: TY9000A 1g nand mcp TY9000A000CMGF SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp
Contextual Info: TY9000A000CMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A000CMGF is a mixed multi-chip package containing a 536,870,912-bit Low Power Synchronous

ty9000

Abstract: MCP 256M nand toshiba ty90 TY90009400DMGF toshiba mcp ty900 nand toshiba ty9000 FBGA149 toshiba nand TM P-FBGA149-1013-0
Contextual Info: TY90009400DMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400DMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices

TY9000

Abstract: MCP 256M nand toshiba toshiba mcp nand toshiba mcp ty900 TY90009 512M x 8 Bit nand FBGA149 toshiba nand TM TY90009400FMGF
Contextual Info: TY90009400FMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400FMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices

ty9000

Abstract: TY9000A ty9000a400 MCP 256M nand toshiba TY9000A400BMGF 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba
Contextual Info: TY9000A400BMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A400BMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices

MCP 256M nand toshiba

Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
Contextual Info: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package

K4X2G323PD8GD8

Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Contextual Info: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from

samsung ddr3 ram MTBF

Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Contextual Info: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

SK6626

Abstract: S3C49RAA01 MARKING CODE 16G S3C49VCX03 movinand DECODER error free nand movinand NAND 32G 2g nand mcp 64G nand
Contextual Info: CTL_embedded NAND Code Information 1/3 Last Updated : November 2008 KLXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 8. VCC & VCCQ 2. MOVI NAND/MCP : L CTL : Controller 3. NAND Function E : Error Free NAND S : eSSD C : Cartridge SIP