NTE364
Abstract: No abstract text available
Text: NTE364 Silicon NPN Transistor RF Power Description: The NTE364 is designed for UHF large signal applications required in industrial and commercial FM equipment operating at 512MHz. Features: D Specified 10 Volt, 512MHz Characteristics: Power Output = 10W Minimum Gain = 6.0dB
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NTE364
NTE364
512MHz.
512MHz
500mA,
470MHz
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SD1422
Abstract: No abstract text available
Text: SD1422 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 25.0 WATTS GP = 6.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1429-03 is an epitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land
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SD1422
MS1429-03
450-512MHz
470MHz
SD1422
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167D
Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100
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TB167D
30-512MHz
28Vdc
LQ801
LB501A
28Vdc,
0R0J12AFX
167D
ph c24 zener diode
amidon BN-61-202
ph c20 zener diode
ph c13 zener diode
ph c24 zener
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vhf power module
Abstract: mapm-020512-040c00
Text: MAPM-020512-040C00 Broadband UHF/VHF Power Module 20 - 512 MHz, 40W M/A-COM Products Preliminary - 8/23/07 Pr Features • • • • • • • Broadband operation 20 - 512MHz Output power: 40W CW Power gain: > 10dB Rugged push-pull FET External bias control
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MAPM-020512-040C00
512MHz
vhf power module
mapm-020512-040c00
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Untitled
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS120216
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1444 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 4.0 WATTS GP = 12.0 dB MINIMUM COMMON EMITTER
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SD1444
450-512MHz
SD1444
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COMTELCO
Abstract: Antennas radome radome in antenna A2543B A2543W
Text: COMTELCO A2543B, A2543W 440-512 MHz 3dB gain LOW PROFILE ANTENNA Technical Specification Performance: Ultra Wideband antenna for the 440-512MHz band providing slightly better than 3dB gain. Stylish and Durable: These antennas are manufactured using the
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A2543B,
A2543W
440-512MHz
440-512MHz
-40dB
-30dB
-20dB
-10dB
COMTELCO
Antennas radome
radome in antenna
A2543B
A2543W
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TB197
Abstract: L8821P
Text: TB197 L8821P Pout vs Pin, Freq=512MHz, Vds=12.5Vdc, Idq=0.2A 4.0 12.25 Linear @ 160mw 12.00 P1dB = 1.9W 3.5 11.75 11.50 3.0 11.25 2.5 Pout 11.00 10.75 2.0 Gain 10.50 10.25 1.5 10.00 1.0 9.75 Efficiency @ 2W=44% 9.50 0.5 9.25 0.0 0.05 0.1 0.15 0.2 0.25 Pin in Watts
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TB197
L8821P
512MHz,
160mw
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NTE480
Abstract: transistor 38W
Text: NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.
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NTE480
512MHz
NTE480
512MHz
470MHz
transistor 38W
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NTE365
Abstract: uhf 3W amplifier
Text: NTE365 Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz Description: The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic:
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NTE365
512MHz
NTE365
512MHz.
470MHz
470MHz
470MHz,
uhf 3W amplifier
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NTE368
Abstract: transistor C 548 B
Text: NTE368 Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic:
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NTE368
512MHz
NTE368
512MHz.
470MHz
470MHz,
transistor C 548 B
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NTE367
Abstract: 45W UHF
Text: NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.
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NTE367
512MHz
NTE367
512MHz.
470MHz
470MHz
45W UHF
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RS-204-C
Abstract: No abstract text available
Text: Mobile Duplexers 470-512MHz ◆ Features - T-Band The 6CT duplexer is a compact unit, using TEM coaxial resonators that are tunable over the 470 to 512MHz frequency range. They are designed to accommodate the TX, RX spacing of 3MHz used in this mobile band but are
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470-512MHz
512MHz
RS-152-B
RS-204-C.
RS-204-C
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M68732SH
Abstract: 490-512MHZ
Text: MITSUBISHI RF POWER MODULE M68732SH SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY
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M68732SH
490-512MHz,
17dBm
490/520MHz
M68732SH
490-512MHZ
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68732SH SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 26.6±0.2 21 .2±0.2 2-R1.5±0.1 £1 HL <j>0.45 a 1 © I1- 6±1 13.7±1 PIN: 18 .8±1 0 P in 23.9±1
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M68732SH
490-512MHz,
490-512M
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57714SH 490-512MHz, 12.5V, 7W, FM MOBILE RADIO PIN : Pin DVCC1 V cc 2 ®VCC3 ®Po ®GND : RF INPUT : 1st. DC SUPPLY : 2nd. OC SUPPLY : 3rd. DC SUPPLY : RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS (Te = 2 5 X unless otherwise noted
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M57714SH
490-512MHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57704SH 490-512MHz, 12.5V, 13W, FM MOBILE RADIO Rn ©VCCI VCC 2 ®VCC3 ©Po ©GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 ‘C unless otherwise noted
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M57704SH
490-512MHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67705H 470-512MHz, 9.6V, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING 45+1 R 1.6 ± 0 . 5 in o •H m 0.4 ± 0.2 5 ±1 9+1 9± 1 PIN : 5 + 1 8.5 ±1 P in : RF INPUT ©VCC1 :■ 1st. DC SUPPLY 36. 5 @VBB : BASE BIAS
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M67705H
470-512MHz,
001b3Q2
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Untitled
Abstract: No abstract text available
Text: b 2 4 T 6 2 T GG17113 2 4 2 • MITSUBISHI RF POWER MODULE M57704SH 490-512MHz, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM PIN : P in @VCC1 @VCC2 VCC3 ®P0 ®GND : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY : RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS 10 = 25% unless otherwise noted
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GG17113
M57704SH
490-512MHz,
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M67703SH
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67703SH 490-512MHz, 12.5V, 45-50W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm ^ ¡> —II—@ HH- PIN : © P in : RF INPUT VCC1 : 1st. DC SUPPLY ® VC C 2 : 2nd. DC SUPPLY ®PO : RF O UTPUT ® G N D : FIN
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M67703SH
490-512MHz,
5-50W,
M67703SH
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M108
Abstract: transistor t1W SD1132-5
Text: H M «-» J IV IIC rO S e m i P ro g re s s P o w e re d b y T ech no log y 140 Commerce Drive Montgomeryville, PA 1 8936-1013 Tel: 215 631-9840 SD1132-5 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS CLASS C TRANSISTOR FREQUENCY 470MHz
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450-512MHz
470MHz
SD1132-5
SD1132-5
450-512MHz)
-1000pf
0150V
8-60pt
SS8S3H32-5-07
M108
transistor t1W
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57721 4 5 0 — 5 1 2 M H z , 1 - 5 W, FM PO RTABLE RADIO DESCRIPTION OUTLINE DRAWING M57721 is a thick film RF power module specifically de signed for 4 5 0 ~ 512MHz, 1 W ~ 5W FM portable sets. Dimensions in mm 45 ± 1 42 ± 1
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M57721
M57721
512MHz,
62MHz,
150MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57704SH 490-512MHz, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM ©HH- PIN : © P in : RF INPUT @ VCC1 : 1st. DC SUPPLY @ V C C 2 : 2 n d . DC SUPPLY @VCC3 : 3 rd . DC SUPPLY PO : RF OUTPUT ® G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 °C unless otherwise noted
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M57704SH
490-512MHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE 001745a mt m lb " M67749SHR 490-512MHz, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM <2 1) PIN : ® P ln : RF INPUT V C C 1 : 1st. DC SUPPLY @VBB : BASE BIAS SUPPLY ®VC C2 : 2nd. DC SUPPLY
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001745a
M67749SHR
490-512MHz,
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