512X16 SRAM Search Results

512X16 sram

Abstract: SRAM timing static SRAM single port
Contextual Info: d110001 512X16, Mux 8, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 512X16 SRAM is a high-performance, synchronous single-port, 512-word by 16-bit memory designed to

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Abstract: sram 16k8 EP3SE50
Contextual Info: 4. TriMatrix Embedded Memory Blocks in Stratix III Devices SIII51004-1.1 Introduction TriMatrix embedded memory blocks provide three different sizes of embedded SRAM to efficiently address the needs of Stratix III FPGA designs. TriMatrix memory includes 640-bit memory logic array blocks

48-PIN

Contextual Info: REFERENCE SIZE SRAM 1 M egabit PART NUMBER 3 M egabit SPEED ns PACKAGE 128Kx8 7 0 ", 85, 100, 120, 150 32-Pin D IP 32-Pin F LA T P A C 15 128Kx8, 64Kx16, 32Kx32 25, 35, 45, 55, 70 66-Pin P G A 23 2 0 *, 25, 30, 35, 45 48-Pin SLC C 48-Pin ° r Lead 48-Pin y Lead

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Abstract: EP3SE50
Contextual Info: 4. TriMatrix Embedded Memory Blocks in Stratix III Devices SIII51004-1.8 Introduction TriMatrix embedded memory blocks provide three different sizes of embedded SRAM to efficiently address the needs of Stratix III FPGA designs. TriMatrix memory includes 640- in ROM mode only or 320-bit memory logic array blocks (MLABs),

dual port ram

Abstract: EP2AGX260 A123 C789 EP2AGX125 EP2AGX190 EP2AGX45 EP2AGX65 shiftregister
Contextual Info: 3. Memory Blocks in Arria II GX Devices AIIGX51003-2.0 Arria II GX memory blocks include 640-bit memory logic array blocks MLABs and 9-Kbit M9K blocks. You can configure each embedded memory block independently to be a single- or dual-port RAM, FIFO, ROM, or shift register with the Quartus ® II

SAE-AS5652

Abstract: EBR-1553 AS5652 fifo vhdl 1553 VHDL 1553b VHDL fifo memory vhdl code for fifo and transmitter vhdl code for asynchronous fifo EBR1553B
Contextual Info: Standard Products Enhanced Bit Rate MIL-STD-1553B Remote Terminal IP Advanced Datasheet August, 2008 INTRODUCTION MIL-STD-1553 has long been the standard in HiRel distributed serial communication for aerospace and defense applications. This standard has been updated and is now controlled by the

Contextual Info: Preliminary KM6164002A CMOS SRAM 256Kx 16 Biit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (C M O S): 10 mA(Max.) Operating KM6164002A-12 : 260 mA(Max.)

Contextual Info: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616B4002-12 : 270 mA(Max.) KM616B4002-13:265 mA(Max.)

Contextual Info: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM 616BV4002J-12 : 240m A (M ax.)

K6F8016R6B

Abstract: K6F8016R6B-F
Contextual Info: Preliminary CMOS SRAM K6F8016R6B Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 25, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: Preliminary CMOS SRAM K6F8016U6D Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft April 26, 2004 Preliminary 0.1 Revised - Updated DC parameters ICC1, ICC2, ISB1, IDR

K6X8016T3B-UF55

Abstract: K6X8016T3B-UF70 K6X8016T3B K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF55
Contextual Info: K6X8016T3B Family CMOS SRAM 512Kx16 bit Low Power Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V Min • Three state outputs

K6X8016T3B-UF55

Abstract: K6X8016T3B K6X8016T3B-F K6X8016T3B-Q k6x8016t3btf55
Contextual Info: K6X8016T3B Family CMOS SRAM Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002

K6F8016R6C

Contextual Info: K6F8016R6C Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft February 7, 2003 Preliminary 1.0 Finalize July 3, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: Preliminary CMOS SRAM K6F8016U6B Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 24, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6F8016R6D

Abstract: K6F8016R6D-F
Contextual Info: Preliminary CMOS SRAM K6F8016R6D Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft April 26, 2004 Preliminary 0.1 Revised - Updated DC parameters ICC1, ICC2, ISB1, IDR

K6F8016U6D-XF70

Abstract: K6F8016U6D
Contextual Info: CMOS SRAM K6F8016U6D Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft April 26, 2004 Preliminary 0.1 Revised - Updated DC parameters ICC1, ICC2, ISB1, IDR

Contextual Info: K6F8016S6B Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 24, 2001 Preliminary 1.0 Finalize - ISB1 change : 15µA to 10µA October 24, 2001

Contextual Info: Advance CMOS SRAM KM616FU8110 Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark June 23, 1999 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: Preliminary KM616FS8110 Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 30, 1999 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

CS-102

Abstract: K6F8016T6C
Contextual Info: Preliminary CMOS SRAM K6F8016T6C Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 30, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: Preliminary K6F8016S6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 14, 2000 Preliminary 0.1 Revise - Change package type from FBGA to TBGA

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Contextual Info: Preliminary KM616FV8110 Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 23, 1999 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6X8016T3B-F

Abstract: K6X8016T3B-TQ70 K6X8016T3B K6X8016T3B-Q K6X8016T3B-TF55
Contextual Info: Preliminary CMOS SRAM K6X8016T3B Family Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002