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    514400J Search Results

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    514400J Price and Stock

    Siemens HYZ514400J-AR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HYZ514400J-AR 2,355
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    Hitachi Ltd HM514400JP-10

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HM514400JP-10 255
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    514400J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM511000J

    Abstract: No abstract text available
    Text: HB56D136B/S Series 1,048,576-W ord x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 1 3 6 B /S B /B R /S B R /B S /S B S is a 1M x 36 dy­ namic RAM module, mounted 8 pieces of 4 Mbit DRAM H M 514400JP/AJ sealed in S O J package and 4 pieces of


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    PDF HB56D136B/S 36-Bit 514400JP/AJ) HM511000JP) HM511000ATS) HB56D136SB/ 72-pin HB56D136B/ HB560136B/S HM511000J

    S-10

    Abstract: No abstract text available
    Text: 1,0 48 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM MODULE PRELIMINARY DESCRIPTION The THM 321020S is a 1,048,576 words by 32 b its dynam ic RAM module which assembled 8 pcs of T C 514400J on the printed circuit board. The THM 321020S can be as well used as 2,097,152 words by


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    PDF THM321020S TC5144Q0J THM321020 THM321020S-80, THM321020SG-80, V0H-0Q31 S-10

    511000a

    Abstract: No abstract text available
    Text: HB56D236B/SB Series-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 2 3 6 B /S B /B S /S B S is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM H M 514400JP /A J sealed in SOJ package and 8 pieces of


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    PDF HB56D236B/SB 152-Word 36-Bit 514400JP 511000JP) 11000A 72-pin 511000a

    514400J

    Abstract: 511000a
    Text: HB56D236B-8/10/12-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT T h e H B 56D 236B is a 2M x 36 dynam ic RA M module, mounted 16 pieces of 4M bit DR AM H M 514400JP sealed in SOJ package and 8 pieces of 1Mbit ORAM (HM 511000AJP) sealed in SOJ package. An


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    PDF HB56D236B-8 HB56D236B-10 HB56D236B-12 152-Word 36-Bit 514400JP) 511000AJP) 72-pin D236B-8/10/12---------------------------- 514400J 511000a

    514400j

    Abstract: 236b 511000a
    Text: HB56D236B Series 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • PIN OUT ■ DESCRIPTION T h e H B56D 236B is a 2M x 36 dynam ic R AM m odule, m ounted 16 pieces o f 4 M bit DRAM H M 514400JP sealed in SOJ package and 8 pieces o f 1 M bit DRAM


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    PDF HB56D236B 152-Word 36-Bit 514400JP) 511000AJP) 72-pin 514400j 236b 511000a

    HM514400

    Abstract: 5a6t hm514400jp8 HM514400ZP8 HM514400-10 HM514400JP-10 514100Z
    Text: HM514400 Series 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION H M 514400JP Series The Hitachi HM514400 is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514400 has realized higher density, higher performance and various func­


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    PDF HM514400 576-Word 20-pin 514400JP 514400Z 5a6t hm514400jp8 HM514400ZP8 HM514400-10 HM514400JP-10 514100Z

    SG-10

    Abstract: SG-80 TC514400J THM402040SG-80 THM402040SG KA5s
    Text: w m am P H ^ WKÊKBÊ m i •!11:? m Sfili! 2 ,0 9 7 ,1 5 2 W O R D S x 4 0 BIT D Y N A M I C RAM m m r f l; i i n t t i H PRELIMINARY MODULE DESCRIPTION T he THM 402020SG is a 2,097,152 w ards by 40 b its dynam ic HAM m odule which assem bled 20 pcs of T C 514400J on the printed circuit board.


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    PDF THM402020SG TC514400J THM402020 SG-80 SG-10 100ns 150ns 180ns SG-10 THM402040SG-80 THM402040SG KA5s

    514400

    Abstract: V7777 M514400
    Text: 514400JP/ZP-8/10/12 4 Megabit DRAM 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION The Hitachi H M 514400 is a C M O S dynam ic RAM organized 1,048,576 word x 4 bit. H M 514400 has realized higher density, higher perform ance and various functions by employing 0.6 /<m C M O S


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    PDF HM514400JP/ZP-8/10/12 576-Word 20-pin HM5I440QJP 514100L 128ms 514400 V7777 M514400

    IRF 829 equivalent

    Abstract: JCA Technology
    Text: HB56D232B Series 2,097,152-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D232B is a 2M x 32 dynamic RAM module, mounted 16 pieces of 4Mbit DRAM 514400JP sealed in SOJ package. An outline of the HB56D232B is 72-pin single in-line package. Therefore, the HB56D232B makes high


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    PDF HB56D232B 152-Word 32-Bit HM514400JP) 72-pin IRF 829 equivalent JCA Technology

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


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    siemens FLH

    Abstract: 514400 514400J-10 514400J-80 514400J
    Text: • ß23SbOS OOSOlbü 4 Pi SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF 47E D 1M x 4-Bit Dynamic RAM HYB 5144Q0*80/-10 Preliminary • • • • • • • • • • • 1 048 576 words by 4-bit organization Fast"access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80


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    PDF 023SbOS siemens FLH 514400 514400J-10 514400J-80 514400J

    Untitled

    Abstract: No abstract text available
    Text: HB56D132 S e rie s -1,048,576-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT The H B56D 132B R /SBR is a 1M x 32 dynamic R A M mod­ ule, mounted 8 pieces of 4 Mbit DRAM 514400JP/AJ sealed in S O J package. An outline of the HB56D 132BR/


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    PDF HB56D132 576-Word 32-Bit HM514400JP/AJ) HB56D 132BR/ 72-pin

    Siemens HYB 41256-12

    Abstract: 41256-12 dram 41256-15 511000BJ-70 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70
    Text: Summary of Types Summary of Types Type Ordering Code Package Description Page Memory Components cont’d HYB 41256-10 Q67100-Q380 P-DIP-16 DRAM (Access Time 100 ns) 35 HYB 41256-12 Q67100-Q346 P-DIP-16 DRAM (Access Time 120 ns) 35 HYB 41256-15 Q67100-Q347


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    PDF 511000B-60 511000B-70 511000B-80 511000BJ-60 511000BJ-70 511000BJ-80 511000BJL-60 511000BJL-70 511000BL-60 511000BL-70 Siemens HYB 41256-12 41256-12 dram 41256-15 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70

    514400j

    Abstract: 514400J-10 514400J-80
    Text: SIEM EN S 1M X 4-Bit Dynamic RAM HYB 514400-80/-10 Preliminary • • 1 048 576 words by 4-bit organization Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80 100 ns access time 190 ns cycle time (HYB 514400-10) • Fast page mode cycle time


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    Untitled

    Abstract: No abstract text available
    Text: TO S H IB A «10=17240 0 0 2 1 1 5 4 b 42E D L O G I C / M E M O R Y 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION IT0S2 * This is advanced information and specifications. are subject to change without notice. ¿ 3 /8 The 514400J/Z is the new generation dynamic RAM organized 1)048,576 words by 4


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    PDF TC514400J/Z TC514400J/Zâ l7240 T-46-23-18

    514400J

    Abstract: No abstract text available
    Text: 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION * This is advanced information and specifications are subject to change without notice. The 514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 514400J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well


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    PDF TC514400J/Z TC514400J/Z. TC514400J/Zâ 514400J

    Untitled

    Abstract: No abstract text available
    Text: HB56D236B/SB Series 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The RAM H B 5 6 D 2 3 6 B /S B /B S /S B S m odule, m ounted 16 is a pieces 2M of x 36 4 M bit dynam ic DRAM H M 5 1 4 4 0 0 J P /A J sea led in S O J p ac k a g e an d 8 p ieces of


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    PDF HB56D236B/SB 152-Word 36-Bit 72-pin

    HM511000

    Abstract: No abstract text available
    Text: ^ 6 5 6 1 3 6 6 S e r i e s - 1,048,576-W ord x 36-B it High D ensity Dynam ic RAM M odule • DESCRIPTIO N ■ PIN O U T The HB56D136B is a 1M x 36 dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM 514400JP sealed in SOJ package and 4 pieces of


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    PDF HB56D136B HM514400JP) HM511000AJP) 72-pin HM511000