51C256H Search Results

Contextual Info: ¡ n t I» P ftE U R fl 11 " H ì1 51C256H HIGH PERFORMANCE RIPPLEMODE 256Kx 1 CHMOS DYNAMIC RAM 51C256H-10t 51C256H-12 51C256H-15 51C256H-20 100 120 150 200 Maximum Column Address Accsss Tims (ns 40 50 65 85 Ripplemode Cycle Tims (ns) 50 60 75 95 Maximum Access Tims (ns)

Contextual Info: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation

Contextual Info: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention

intel 2102 Static RAM

Abstract: 51C256HL 51C256HL-15 51C256HL-20 TCAM
Contextual Info: in te i' 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation • Low Power Data Retention

A1803

Contextual Info: in t ^ l p,aiL 51C256H HIGH PERFORMANCE RIPPLEMODETM 256K X 1 CHMOS DYNAMIC RAM 51C256H-12t Maximum Access Time ns 120 Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ns) 55 65 Ripplemode Operation 51C256H-15 150 70 B0 21C256H-20 209 90 100

B1GP

Abstract: 51C256H 51C256H-10 51C256H-12 51C256H-15 51C256H-20 28003* intel tpC-170
Contextual Info: i n t ^ r P R E U M M Â Ifflf " f l 1 5 1 C 2 5 6 H HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Maximum Accesa Time ns Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ne) 51C256H-10f 51C256H-12 51C256H-15 51C256H-20 100 120

20 led VU meter

Abstract: 51C256HL 51C256HL-15 51C256HL-20 28003* intel
Contextual Info: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention

Contextual Info: in t e i 51C256H HIGH PERFORMANCE RIPPLEMODETM 256K X 1 CHMOS DYNAMIC RAM 51C256H-12t 51C256H-15 21C256H-20 Maximum Access Time ns 120 150 200 Maximum Column Address Access Time (ns) 55 70 90 Ripplemode Cycle Time (ns) 65 80 100 Ripplemode Operation Fast “ Usable Speed”

Contextual Info: U M M h m in te i 51C256H HIGH PERFORMANCE RIPPLEMODE 256Kx 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) Rlppiemode Cycle Time (ns) 51C256H-10f 51C256H-12 51C256H-15 51C256H-20 100 120 150 200 40 50 65 85 50 60 75

21C256

Abstract: 51C256H 51C256H-12 51C256H-15 51C256H-20
Contextual Info: intei* 51C 256H HIGH PERFO RM ANCE RIPPLEM O D E 256K X 1 CHM OS D YN A M IC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ns) 51C256K-12t 120 51C256H-15 150 55 70 80 65 21C256H-20 200 90 100 Ripplemode Operation

21C256

Abstract: 51C256H 51C256H-12 51C256H-15 51C256H-20 28003* intel
Contextual Info: in t e i E 51C 256H HIGH PERFO RM AN CE R I P P L E M O D E T M 256K X 1 CH M O S D YN A M IC RAM 51C256H-12t 51C256H-15 120 150 70 80 Maximum Access Time ns Maximum Column Address Access Time (ns) 55 Ripplemode Cycle Time (ns) 65 21C256H-20 200 90 100 Ripplemode Operation

A1603

Abstract: 28003* intel C1101 51C256H 51C256H-10 51C256H-12 51C256H-15 51C256H-20
Contextual Info: P R E u m m ^ m in t e i 51C256H HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Tims (ns) Ripplemode Cycle Tims (ns) 51C256H-10+ 51C256H-12 51C256H-15 51C256H-20 100 120 150 200 40 50 65 85

HY51C256-12

Abstract: 51c256 GM71C256-80 GM71C256-10 GoldStar 51C256H-12 51C256H-20 51C256HL-15 51C256HL-20 51C256L-15
Contextual Info: - 256K m & ít £ * fc> TRAC max ns TRCY min (ns) CMOS D y n a m ic 'i -y ^ y y n\i TCAD »in (ns) TAH TP nin (ns) •in (ns) TWCY nin (ns) R A M (2 6 2 1 4 4 x 1) M m TDH TRWC ■in (ns) ain (ns) V D D or V C C (V) I DD max (b A) 16 P I N A ( VIL ■ax