522MW Search Results

Contextual Info: IBM0165400B 16M x 4 12/12 DRAM Features • 16,777,216 word by 4 bit organization • Performance: • Single 3.3 ± 0.3V power supply • Fast Page Mode • CAS before RAS Refresh - 4096 cycles/Retention Time • RAS only Refresh - 4096 cycles/Retention Time

RT-6

Contextual Info: MITSUBISHI LS Is M5M4V4280J,TP,RT-6,-7,-8,-6S,-7S,-8S PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 18-bit dynamic RAMs, fabricated with the high performance CMOS process, and is

Contextual Info: GM71V65803C GM71VS65803CL LG Semicon Co.,Ltd. 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 65803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)65803C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as

Contextual Info: f i f e L G S e m ï c o n C GM71V65803C GM71VS65803CL 8,388,608 WORDS x 8 BIT o ., L td . w w .,f c .iw . CMOS DYNAMIC RAM Description Pin Configuration The GM71V(S 65803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)65803C/CL utilizes advanced CMOS

HY514100A

Abstract: HY514100ALT HY514100AJ 4Mx1
Contextual Info: HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: IBM0165800B 8M x 8 12/11 DRAM Features • 8,388,608 word by 8 bit organization • Performance: -50 • Single 3.3 ± 0.3V power supply • Fast Page Mode • CAS before RAS Refresh - 4096 cycles/Retention Time • 64ms Standard Power SP Retention Time

Contextual Info: GM71V64803A GM71VS64803AL LG Semicon Co.,Ltd. 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803A/AL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803A/AL utilizes advanced CMOS Silicon Gate Process Technology as well as

ICS8400110I

Abstract: in 4007 diode footprint VFQFN C250 C650 ICS00110EIL MO-220 tC65L 8400110EKILF c65d
Contextual Info: Low Jitter, Telecom Rate-Conversion PLL ICS8400110I DATA SHEET General Description The ICS8400110I generates a 65.536MHz clock that is either locked to the input reference or locked to the external crystal or oscillator. In the locked mode, the reference input is continuously monitored for

Contextual Info: IBM0165800B 8M x 8 12/11 DRAM Features • 8,388,608 word by 8 bit organization • Performance: -50 -60 jtRAC ! RAS Access Tim e 50ns 60ns jtcAC ! CAS Access Tim e 13ns ' 5ns ;1aa ! Column Address Access Tim e I 25ns 30ns |1rc I Cycle Tim e 90ns ! 11 0 ns i

Contextual Info: GM71V64803A GM71VS64803AL LG S em îco n C o.X td , 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803A/AL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803A/AL utilizes advanced CMOS

51v18165

Abstract: 658J A8303 TC51V18165
Contextual Info: , IN TEG RATED TO SH IB A FO SH ibA M O S D IGITAL IN T EG R A TED T C 5 1 V 1 8 1 6 5 B J S / B F T S - 60 T C 5 1 V 1 8 1 6 5 B J S / B F T S - 70 CIRCUIT TECH N ICAL DATA . CIRCU IT SILICON GATE CMOS TENTATIVE DA TA 1,048,576 W O R D x 16 BIT EDO HYPER PAGE DYNAM IC RAM

Contextual Info: •HYUNDAI HY514100A 4Mx1, Fast Page mode DESCRIPTION T h is fa m ily is a 4M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 1 -b it c o n fig u ra tio n w ith F ast P age m o d e C M O S DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

A0-A10d

Contextual Info: HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

GM71V64803A

Contextual Info: GM71V64803A GM71VS64803AL LG Semicon Co.,Ltd. 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803A/AL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803A/AL utilizes advanced CMOS Silicon Gate Process Technology as well as

Contextual Info: • L.2 4 T B 2 S GD2 3 TDS 033 *11111 MITSUBISHI LS I s M5M4V4280JJP,RT-6,-7,-8,-6S,-7S,-8S p -^ FAST PAGE MODE 4718592-BrT 262144-WORD BY 18-BIT DYNAMIC RAM a ,1 - 0 ' " h’BCt Some P»ra DESCRIPTION This is a family of 262144-word by 18-bit dynamic RAMs,

Contextual Info: Low Jitter, Telecom Rate-Conversion PLL ICS8400110I DATA SHEET General Description The ICS8400110I generates a 65.536MHz clock that is either locked to the input reference or locked to the external crystal or oscillator. In the locked mode, the reference input is continuously monitored for

DEI1090

Abstract: ac dimmer dimmer LED Of74C dimmer applications circuit diagram DS-MW-01090 SOIC WB 18 SOIC 18 WB DEI1090-SES Ac to Dc led driver with pwm dimming
Contextual Info: Device Engineering Incorporated DEI1090 LED Driver with Square-Law Dimming Control 385 E. Alamo Dr. Chandler, Arizona 85225 Phone: 480 303-0822 Fax: (480) 303-0824 E-mail: admin@deiaz.com FEATURES • • • • • • • Emulates incandescent lamp ‘Square Law’ luminance curve.

A6310

Contextual Info: HM5164805A Series HM5165805A Series 8388608-word x 8-bit Dynamic RAM HITACHI ADE-203-458A Z Rev. 1.0 Sep. 12, 1997 Description The Hitachi HM5164805A Series, HM5165805A Series are CMOS dynamic RAMs organized 8,388,608word X 8-bit. They employ the most advanced CMOS technology for high performance and low power.

514200 ram

Contextual Info: IBM0165400B 16M x 4 12/12 DRAM Features • 16,777,216 word by 4 bit organization • Performance: -50 • Single 3.3 ± 0.3V power supply • Fast Page Mode • CAS before RAS Refresh RAS Access Time 50 ns 60ns : tcAc GAS Access Time 13ns 15ns Colum n Address Access Time i 25ns

TOSHIBA TSOP50-P-400

Abstract: TOSHIBA TSOP50-P-400 DIMENSIONS TC51V18165
Contextual Info: TOSHIBA TC51V18165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description TheTC51V18165BFT is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC51V18165BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide

Contextual Info: ••HYUNDAI - • HY514100A 4Mx1,Fast Page mode DESCRIPTION This fam ily is a 4M bit dynamic RAM organized 4,194,304 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast page mode offers high speed of random access memory within the same row. The circuit and process