5264805
Abstract: HM5264805 Series Hitachi DSA00164
Text: HM5264165 Series 5264805 Series HM5264405 Series 64M LVTTL interface SDRAM 125 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank/ 4-Mword × 4-bit × 4-bank ADE-203-497C Z Rev. 1.0 July 1, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi
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HM5264165
HM5264805
HM5264405
Hz/100
16-bit
ADE-203-497C
64-Mbit
1048576-word
5264805
HM5264805 Series
Hitachi DSA00164
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HM5264165
Abstract: HM5264165TT-10 HM5264165TT-12 HM5264165TT-15 HM5264805TT-10 HM5264805TT-12 HM5264805TT-15 Hitachi DSA0015
Text: HM5264165 Series 5264805 Series HM5264405 Series 1,048,576-word x 16-bit × 4-bank Synchronous Dynamic RAM 2,097,152-word × 8-bit × 4-bank Synchronous Dynamic RAM 4,194,304-word × 4-bit × 4-bank Synchronous Dynamic RAM ADE-203-497 Z Preliminary Rev. 0.2
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HM5264165
HM5264805
HM5264405
576-word
16-bit
152-word
304-word
ADE-203-497
HM5264805
HM5264165TT-10
HM5264165TT-12
HM5264165TT-15
HM5264805TT-10
HM5264805TT-12
HM5264805TT-15
Hitachi DSA0015
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HM5264165
Abstract: HM5264165LTT-10 HM5264165LTT-80 HM5264165TT-10 HM5264165TT-80 HM5264805TT-80
Text: HM5264165 Series 5264805 Series HM5264405 Series 64M LVTTL interface SDRAM 125 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank/ 4-Mword × 4-bit × 4-bank ADE-203-497C Z Rev. 1.0 July 1, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi
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HM5264165
HM5264805
HM5264405
Hz/100
16-bit
ADE-203-497C
64-Mbit
1048576-word
HM5264165LTT-10
HM5264165LTT-80
HM5264165TT-10
HM5264165TT-80
HM5264805TT-80
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HM5264165
Abstract: HM5264165LTT-10 HM5264165LTT-80 HM5264165TT-10 HM5264165TT-80 Hitachi DSA00196
Text: HM5264165 Series 5264805 Series HM5264405 Series 64M LVTTL interface SDRAM 125 MHz/66 MHz 1-Mword x 16-bit/2-Mword × 8-bit/4-Mword × 4-bit ADE-203-497A Z Preliminary Rev. 0.5 Dec. 5, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5264165, 5264805,
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HM5264165
HM5264805
HM5264405
Hz/66
16-bit/2-Mword
ADE-203-497A
HM5264165,
HM5264805,
HM5264165LTT-10
HM5264165LTT-80
HM5264165TT-10
HM5264165TT-80
Hitachi DSA00196
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Untitled
Abstract: No abstract text available
Text: HB52E88EM-D, HB52E89EM-D, HB52E168EN-D, HB52E169EN-D 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52E89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
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HB52E88EM-D,
HB52E89EM-D,
HB52E168EN-D,
HB52E169EN-D
HB52E88EM)
64-bit,
HB52E89EM)
72-bit,
HB52E168EN)
16-Mword
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CDC2509
Abstract: No abstract text available
Text: HB52E89E1P-D 64 MB Registered SDRAM DIMM 8-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 9 pcs of 8 M x 8 Components PC100 SDRAM HITACHI ADE-203-965 (Z) Preliminary, Rev.0.0 Nov. 3, 1998 Description The HB52E89E1P belongs to 8-byte DIMM (Dual In-line Memory Module) family, and have been
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HB52E89E1P-D
72-bit,
PC100
ADE-203-965
HB52E89E1P
64-Mbit
HM5264805DTT)
ALVC162835)
CDC2509B)
CDC2509
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Untitled
Abstract: No abstract text available
Text: HB52RD168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components PC100 SDRAM HITACHI ADE-203-990 (Z) Preliminary, Rev. 0.0 Dec. 16, 1998 Description The HB52RD168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line
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HB52RD168DB-D
16-Mword
64-bit,
PC100
ADE-203-990
HB52RD168DB
64-Mbit
HM5264405DTB)
144-pin
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FZ77
Abstract: HM5264165 HM5264165TT-10 HM5264165TT-12 HM5264165TT-15
Text: HM5264165 Series 5264805 Series HM5264405 Series 1,048,576-word x 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word x 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word x 4-bit x 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.1
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HM5264165
HM5264805
HM5264405
576-word
16-bit
152-word
304-word
ADE-203-497
FZ77
HM5264165TT-10
HM5264165TT-12
HM5264165TT-15
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Untitled
Abstract: No abstract text available
Text: HM5264165 Series 5264805 Series HM5264405 Series 1,048,576-word X 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word X 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word X 4-bit X 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.3
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HM5264165
HM5264805
HM5264405
576-word
16-bit
152-word
304-word
ADE-203-497
HM5264165,
HM5264805,
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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HM5264165
Abstract: HM5264165TT-10 HM5264165TT-80 HM5264805TT-10
Text: HM5264165 Series 5264805 Series HM5264405 Series 1,048,576-word x 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word x 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word x 4-bit x 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.3
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HM5264165
HM5264805
HM5264405
576-word
16-bit
152-word
304-word
ADE-203-497
HM5264165,
HM5264805,
HM5264165TT-10
HM5264165TT-80
HM5264805TT-10
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Nippon capacitors
Abstract: No abstract text available
Text: HB52R329E2-D 256 MB Registered SDRAM DIMM 32-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 16 M x 4 Components PC100 SDRAM HITACHI ADE-203-966 (Z) Preliminary, Rev. 0.0 Nov. 3, 1998 Description The HB52R329E2 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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HB52R329E2-D
32-Mword
72-bit,
PC100
ADE-203-966
HB52R329E2
64-Mbit
HM5264405DTB)
CDC2510B)
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: HB52E88EM-B6, HB52E89EM-B6, HB52E168EN-B6, HB52E169EN-B6 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52E89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
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HB52E88EM-B6,
HB52E89EM-B6,
HB52E168EN-B6,
HB52E169EN-B6
HB52E88EM)
64-bit,
HB52E89EM)
72-bit,
HB52E168EN)
16-Mword
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HB52R329E22-D 256 MB Registered SDRAM DIMM 32-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 16 M x 4 Components PC100 SDRAM HITACHI ADE-203-993 (Z) Preliminary, Rev. 0.0 Dec. 25, 1998 Description The HB52R329E22 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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HB52R329E22-D
32-Mword
72-bit,
PC100
ADE-203-993
HB52R329E22
64-Mbit
HM5264405DTB)
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5264165T
Abstract: 52641 5264805t
Text: HM5264165 Series 5264805 Series HM5264405 Series 1,048,576-word x 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word x 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word x 4-bit x 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.1
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HM5264165
HM5264805
HM5264405
576-word
16-bit
152-word
304-word
ADE-203-497
5264165T
52641
5264805t
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Untitled
Abstract: No abstract text available
Text: HB52C88EM, HB52C89EM HB52C168EN, HB52C169EN 64 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus HB52C88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52C89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus
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HB52C88EM,
HB52C89EM
HB52C168EN,
HB52C169EN
HB52C88EM)
64-bit,
HB52C89EM)
72-bit,
HB52C168EN)
16-Mword
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Untitled
Abstract: No abstract text available
Text: HB52E88EM-B6, HB52E89EM-B6, HB52E168EN-B6, HB52E169EN-B6 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52E89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
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HB52E88EM-B6,
HB52E89EM-B6,
HB52E168EN-B6,
HB52E169EN-B6
HB52E88EM)
64-bit,
HB52E89EM)
72-bit,
HB52E168EN)
16-Mword
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Untitled
Abstract: No abstract text available
Text: HB52R329E2-D 256 MB Registered SDRAM DIMM 32-Mword x 72-bit, 100 MHz Memory Bus, 2-Bank Module 36 pcs of 16 M x 4 Components PC100 SDRAM HITACHI ADE-203-966 (Z) Preliminary, Rev. 0.0 Nov. 3, 1998 Description The HB52R329E2 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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OCR Scan
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HB52R329E2-D
32-Mword
72-bit,
PC100
ADE-203-966
HB52R329E2
64-Mbit
HM5264405DTB)
CDC2510B)
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HITACHI 5264805
Abstract: Nippon capacitors MAX72024
Text: HB52E88EM-B6, HB52E89EM-B6, HB52E168EN-B6, HB52E169EN-B6 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52E89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
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HB52E88EM-B6,
HB52E89EM-B6,
HB52E168EN-B6,
HB52E169EN-B6
HB52E88EM)
64-bit,
HB52E89EM)
72-bit,
HB52E168EN)
16-Mword
HITACHI 5264805
Nippon capacitors
MAX72024
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5264165
Abstract: HITACHI 5264805 5264805
Text: HM5264165 Series 5264805 Series HM5264405 Series 1,048,576-word x 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word x 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word x 4-bit x 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.2
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HM5264165
HM5264805
HM5264405
576-word
16-bit
152-word
304-word
ADE-203-497
5264165
HITACHI 5264805
5264805
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Untitled
Abstract: No abstract text available
Text: HB52F169E1-75F 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M x 4 Components PC133 SDRAM H IT A C H I ADE-203-1018 (Z) Preliminary Rev. 0.0 Feb. 20, 1999 Description The HB52F169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed
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HB52F169E1-75F
16-Mword
72-bit,
PC133
ADE-203-1018
HB52F169E1
64-Mbit
HM5264405FTT)
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Untitled
Abstract: No abstract text available
Text: HM5264165 Series 5264805 Series HM5264405 Series 1,048,576-word x 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word x 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word x 4-bit x 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.1
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OCR Scan
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HM5264165
HM5264805
HM5264405
576-word
16-bit
152-word
304-word
ADE-203-497
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Untitled
Abstract: No abstract text available
Text: HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword 64-bit, 1-Bank Module (8 pcs of 8 M 8 Components) (HB52E89EM) 8-Mword 72-bit, 1-Bank Module (9 pcs of 8 M 8 Components) 128 MB Unbuffered SDRAM DIMM, 100 MHz Memory
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HB52E88EM-F,
HB52E89EM-F,
HB52E168EN-F,
HB52E169EN-F
HB52E88EM)
64-bit,
HB52E89EM)
72-bit,
HB52E168EN)
16-Mword
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Untitled
Abstract: No abstract text available
Text: HB52C88EM, HB52C89EM, HB52C168EN, HB52C169EN 64 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus HB52C88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52C89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus
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HB52C88EM,
HB52C89EM,
HB52C168EN,
HB52C169EN
HB52C88EM)
64-bit,
HB52C89EM)
72-bit,
HB52C168EN)
16-Mword
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